100A GTO Search Results

100A GTO Result Highlights (5)

Part	Manufacturer	Description	Download
62684-501100ALF	Amphenol Communications Solutions	0.50mm Flex Connector, OPU Series, 50 Position , Side Entry, Lower Side Contact, Surface Mount, ZIF	PDF
62684-452100AHLF	Amphenol Communications Solutions	0.50mm Flex Connector, OPU Series, 45 Position , Side Entry, Upper Side Contact, Surface Mount, ZIF, Halogen free	PDF
HM2R81PA8100AALF	Amphenol Communications Solutions	Back Plane Connectors, 2mm Hard Metric Series, Millipacs, Right Angle Receptacle,Type D 22 without Pegs,Press Fit Tail, , and ROHS Compliant	PDF
U90L1E1100A	Amphenol Communications Solutions	ExpressPort QSFP+, High Speed Input Output Connectors, SFP CAGE WITH HS AND CLIP.	PDF
U91D122100A31	Amphenol Communications Solutions	CXP, High Speed Input Output Connector, ENHANCED FOOTPRINT	PDF

100A GTO Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
D2103 Abstract: D2101 D1300 S3900SF 1N285 S3900MF D1201P 1N5213 1N538 S3901S Contextual Info: 1TR Product Matrix GTO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550	OCR Scan	220ab s3902df s3900e s3901m +13s3903mf s3900mf s3901mf s3900s s3901s s3900sf d2103 d2101 d1300 1n285 d1201p 1n5213 1n538	PDF
S3901S Abstract: D1201P 1N538 150a gto 1N539 S3900E 1N5214 S3900S S3900SF S3901M Contextual Info: 1TR Product Matrix GTO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550	OCR Scan	220ab s3902df s3900e s3901m +11s3903mf s3900mf s3901mf s3900s s3901s s3900sf d1201p 1n538 150a gto 1n539 1n5214	PDF
rca thyristor Abstract: 40A GTO thyristor 1N5216 gto 100A 1N5213 1N3563 D1300A 50A GTO thyristor S3900MF 1N5217 Contextual Info: 1TR Product M atrix GTO Product M atrix For H o rizontal-D eflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500	OCR Scan	220ab s3902df s3900e s3901m +15s3903mf s3900mf s3901mf s3900s s3901s s3900sf rca thyristor 40a gto thyristor 1n5216 gto 100a 1n5213 1n3563 d1300a 50a gto thyristor 1n5217	PDF
1N5216 Abstract: D1300A 1N5212 d1201p 1N5213 1N5211 1N539 S3900E 1N5217 S3900S Contextual Info: 1TR Product M atrix GTO Product M atrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550	OCR Scan	220ab s3902df s3900e s3901m +14s3903mf s3900mf s3901mf s3900s s3901s s3900sf 1n5216 d1300a 1n5212 d1201p 1n5213 1n5211 1n539 1n5217	PDF
1n5399 equivalent Abstract: scr rca 40A GTO thyristor rca thyristor D2101 G5001A SCR GTO 1N2862 D3202 S3901S Contextual Info: 1TR Product Matrix GTO Product Matrix For H o rizontal-D eflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550	OCR Scan	220ab s3902df s3900e s3901m +15s3903mf s3900mf s3901mf s3900s s3901s s3900sf 1n5399 equivalent scr rca 40a gto thyristor rca thyristor d2101 g5001a scr gto 1n2862 d3202	PDF
URU100120 Abstract: RURU100120 URU100 Contextual Info: RURU100120 Data Sheet January 2002 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.	Original	ruru100120 125ns 175oc uru100120 +1uru100	PDF
fdb075n15a Contextual Info: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has	Original	fdp075n15a f102/fdb075n15a fdb075n15a	PDF
MOSFET 50V 100A TO-220 Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A Contextual Info: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been	Original	fdp045n10a fdi045n10a mosfet 50v 100a to-220 mosfet 50v 100a	PDF
RURU10060 Contextual Info: RURU10060 Data Sheet January 2002 100A, 600V Ultrafast Diode Features The RURU10060 is an ultrafast diode with soft recovery characteristics trr < 80ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.	Original	ruru10060 175oc	PDF
FDB075N15A Contextual Info: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been	Original	fdp075n15a f102/fdb075n15a fdb075n15a	PDF
Contextual Info: FDP030N06B_F102 N-Channel PowerTrench MOSFET 60V, 195A, 3.1mΩ Features Description • RDS on = 2.67mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored	Original		PDF
RURU100120 Abstract: URU100120 Contextual Info: RURU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial	Original	ruru100120 125ns uru100120	PDF
ISD 100 Abstract: FDP075N15A Contextual Info: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been	Original	fdp075n15a f102/fdb075n15a fdb075n15a isd 100	PDF
RURU10060 Contextual Info: RURU10060 Data Sheet January 2000 File Number 3546.3 100A, 600V Ultrafast Diode Features The RURU10060 is an ultrafast diode with soft recovery characteristics trr < 80ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial	Original	ruru10060	PDF

FDP020N06 Abstract: micro solar inverters Mosfet application note fairchild FDP020N06B 48V kW battery charger Contextual Info: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description • RDS on = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored	Original	fdp020n06 micro solar inverters mosfet application note fairchild fdp020n06b +148v kw battery charger	PDF
Contextual Info: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description • RDS on = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored	Original		PDF
Contextual Info: UniFETTM FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω Features Description • RDS on = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.	Original	fdl100n50f 238nc	PDF
Contextual Info: FDMS86550 N-Channel PowerTrench MOSFET 60 V, 100A, 1.65 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and	Original	fdms86550	PDF
RHR100120 Abstract: RHRU100120 Contextual Info: RHRU100120 Data Sheet January 2002 100A, 1200V Hyperfast Diode Features The RHRU100120 is a hyperfast diode with soft recovery characteristics trr < 90ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.	Original	rhru100120 175oc rhr100120	PDF
RHRU10060 Contextual Info: RHRU10060 Data Sheet January 2002 100A, 600V Hyperfast Diode Features The RHRU10060 is a hyperfast diode with soft recovery characteristics trr < 50ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.	Original	rhru10060 175oc	PDF
S3901S Abstract: S3900SF S3900MF rca thyristor scr 50a to 65 S3903MF 1N3194 SCR 50A S3900S S3901MF Contextual Info: 1TR Product Matrix GTO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW ATT Commutating Retrace 8A 100A 'T (R M S) 'TSM (60 Hz) 400 450 500 550 600 650 700 750 ig t M RCA GTO's 45 4 S3900MF S3900S S3900SF 30 4 ^ a)	OCR Scan	220ab s3902df s3900e s3901m +10s3903mf s3900mf s3901mf s3900s s3901s s3900sf rca thyristor scr 50a to 65 1n3194 scr 50a	PDF
Contextual Info: FDA8440 N-Channel PowerTrench MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS on = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids	Original	fda8440 345nc 145oc	PDF
FDA8440 Abstract: alternator diode 80a Contextual Info: FDA8440 N-Channel PowerTrench MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS on = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids	Original	fda8440 345nc alternator diode 80a	PDF
FDA8440 Contextual Info: FDA8440 N-Channel PowerTrench MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS on = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids	Original	fda8440 345nc	PDF

100A GTO Search Results

100A GTO Result Highlights (5)

100A GTO Datasheets Context Search

D2103

S3901S

rca thyristor

1N5216

1n5399 equivalent

URU100120

fdb075n15a

MOSFET 50V 100A TO-220

RURU10060

FDB075N15A

RURU100120

ISD 100

RURU10060

FDP020N06

RHR100120

RHRU10060

S3901S

FDA8440

FDA8440