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    OMRON Industrial Automation

    OMRON Industrial Automation A22NLMMMTOAG100OC

    ASMBY, LGT, MSHRM, BM, ORG,1NO
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    RS A22NLMMMTOAG100OC Bulk 14 Weeks 1
    • 1 $29.63
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    Master Electronics A22NLMMMTOAG100OC
    • 1 $25.56
    • 10 $22.81
    • 100 $20.31
    • 1000 $19.47
    • 10000 $19.47
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    OMRON Industrial Automation A22NLMGMTOAG100OC

    ASMBY, LGT, FULGRD, BM, ORG,1NO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS A22NLMGMTOAG100OC Bulk 14 Weeks 1
    • 1 $29.63
    • 10 $29.63
    • 100 $29.63
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    Master Electronics A22NLMGMTOAG100OC
    • 1 $25.56
    • 10 $22.81
    • 100 $20.31
    • 1000 $19.47
    • 10000 $19.47
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    OMRON Industrial Automation A22NLBNMTOAP100OC

    ASSM, FLT, PLA BEZ, ORAN,1NO
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    RS A22NLBNMTOAP100OC Bulk 14 Weeks 1
    • 1 $39.42
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    Master Electronics A22NLBNMTOAP100OC
    • 1 $34.00
    • 10 $31.81
    • 100 $27.01
    • 1000 $25.90
    • 10000 $25.90
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    OMRON Industrial Automation A22NL-MGM-TOA-G100-OC

    PUSHBUTTON, LGT, FULGRD, BM, ORG,1NO
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    RS A22NL-MGM-TOA-G100-OC Bulk 14 Weeks 1
    • 1 $21.02
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    OMRON Industrial Automation A22NL-MMM-TOA-G100-OC

    PUSHBUTTON, LGT, MSHRM, BM, ORG,1NO
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    RS A22NL-MMM-TOA-G100-OC Bulk 14 Weeks 1
    • 1 $28.40
    • 10 $26.69
    • 100 $25.84
    • 1000 $25.84
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    100OC Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TB-285

    Contextual Info: Ceramic High Pass Filter 50Ω HFCN-4400+ 5000 to 10100 MHz Maximum Ratings Operating Temperature -55oC to 100oC Storage Temperature -55 C to 100 C o • • • • • • • o RF Power Input *derate linearly to 3W at 100°C ambient 7W* Pin Connections


    Original     		-55oc100ochfcn-4400fv1206-1+5hfcn-4400d2002/95/ectb-285pl-158m106185 PDF

    STW6NA90

    Abstract: sd 50 diode
    Contextual Info: STW6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW6NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		stw6na90100oco-247sd 50 diode PDF

    STD15N06

    Contextual Info: STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD15N06 60 V < 0.1 Ω 15 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		std15n06100oc175oco-251+1o-252 PDF

    STP6N60FI

    Contextual Info: STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		stp6n60fi100ocisowatt220 PDF

    STB18N20

    Abstract: isd 2100
    Contextual Info: STB18N20 N-CHANNEL 200V - 0.145Ω - 18A I2PAK/D2PAK POWER MOSFET TRANSISTOR TYPE STB18N20 • ■ ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200 V <0.18 Ω 18 A TYPICAL RDS(on) = 0.145 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		stb18n20100oco-262o-263+1isd 2100 PDF

    STD6N10

    Contextual Info: STD6N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD6N10 • ■ ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V < 0.45 Ω 6A TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		std6n10100oc175oco-251+1o-252 PDF

    BA232

    Abstract: Edal Series BA232 Silicon Bridge Rectifier BRIDGE-RECTIFIER BA232-10 Bridge rectifier piv bridge rectifier BA232-5 ba2322 ba2325
    Contextual Info: Edal SERIES BA232 Silicon Bridge Rectifier ELECTRICAL RATINGS FOR SINGLE PHASE BRIDGE CIRCUIT MAXIMUM ALLOWABLE DC OUTPUT CURRENT: AT 55o C AMBIENT TEMPERATURE AT 100oC AMBIENT TEMPERATURE 2.0 AMPS 1.2 AMPS MAXIMUM SINGLE CYCLE SURGE CURRENT IFSM 60 AMPS


    Original     		ba232100ocba232-5ba232-10+12ba232-20ba232-30ba232-40ba232-50ba232-60ba232-70edal series ba232 silicon bridge rectifierbridge-rectifierbridge rectifierpiv bridge rectifierba2322ba2325 PDF

    9407a

    Abstract: BPF-A1340 PL-227 048002
    Contextual Info: Surface Mount Bandpass Filter 50Ω BPF-A1340+ 1000 to 1800 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 1W at 25oC • • • • Good VSWR, 1.4:1 Typ @ Passband High Rejection Shielded case


    Original     		bpf-a1340-55oc100oc2002/95/ec+6hq1157m121478edr-9407auf19407apl-227048002 PDF

    BPF-A127

    Contextual Info: Surface Mount Bandpass Filter 50Ω BPF-A127+ 118 to 137 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 0.5*W at 25oC *Passband rating, derate linearly to 0.25W at 100oC ambient. • •


    Original     		bpf-a127-55oc100oc2002/95/ec+3hq1157m117937edr-9028au PDF

    TB 6064

    Abstract: BPF-A122
    Contextual Info: Surface Mount Bandpass Filter 50Ω BPF-A122+ 119 to 125 MHz Maximum Ratings Features o Operating Temperature Storage Temperature RF Power Input • Good VSWR, 1.3:1 Typ @ Pass Band • High Stop Band Rejection o -40 C to 85 C -55oC to 100oC 0.5*W at 25oC Application


    Original     		bpf-a122-55oc100ocm102075+2edr-7824utb 6064 PDF

    BUZ80

    Abstract: BUZ80FI transistor BUZ80
    Contextual Info: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 800 V 800 V <4Ω <4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		buz80buz80fi100oco-220+2isowatt220transistor buz80 PDF

    STD2N50

    Contextual Info: STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD2N50 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 500 V < 5.5 Ω 2A TYPICAL RDS(on) = 4.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED


    Original     		std2n50100oco-251o-252 PDF

    STP5N30

    Abstract: STP5N30FI
    Contextual Info: STP5N30 STP5N30FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N30 STP5N30FI • ■ ■ ■ ■ VDSS R DS on ID 300 V 300 V < 1.4 Ω < 1.4 Ω 5A 3.5 A TYPICAL RDS(on) = 1.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		stp5n30stp5n30fi100oco-220+1isowatt220 PDF

    STB6NA80

    Contextual Info: STB6NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS on ID STB6NA80 800 V < 1.9 Ω 5.7 A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.68 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		stb6na80100oco-262o-263 PDF

    IRF740

    Abstract: IRF740FI transistor equivalent irf740 irf740 DATA SHEET
    Contextual Info: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.55 Ω < 0.55 Ω 10 A 5.5 A TYPICAL RDS(on) = 0.42 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		irf740irf740fi100oco-220+3isowatt220transistor equivalent irf740irf740 data sheet PDF

    STP5N30L

    Abstract: STP5N30LFI
    Contextual Info: STP5N30L STP5N30LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N30L STP5N30LFI • ■ ■ ■ ■ V DSS R DS on ID 300 V 300 V < 1.4 Ω < 1.4 Ω 5A 3.5 A TYPICAL RDS(on) = 1.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		stp5n30lstp5n30lfi100oco-220+1isowatt220 PDF

    IRF730FI

    Abstract: IRF730 OC470 irf730f
    Contextual Info: IRF730 IRF730FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF730 IRF730FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 1Ω < 1Ω 5.5 A 3.5 A TYPICAL RDS(on) = 0.82 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		irf730irf730fi100oco-220+3isowatt220oc470irf730f PDF

    TO-252 MOSFET p channel

    Contextual Info: STD30NE06L  N - CHANNEL 60V - 0.025 Ω - 30A TO-252 STripFET POWER MOSFET TYPE V DSS R DS o n ID STD30NE06L 60 V < 0.03 Ω 30 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.025 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100oC


    Original     		std30ne06lo-252100octo-252 mosfet p channel PDF

    10858

    Abstract: M9703
    Contextual Info: Surface Mount NEW! Band Pass Filter RBP-275 268 to 282 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power Input Features • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.35" X 0.35" -40 C to 85 C -55oC to 100oC 0.5W at 25oC


    Original     		-55oc100ocrbp-275gp731+5tb-332pl-176m9703210858m9703 PDF

    TO-247ad

    Abstract: SBL4030PT SBL4035PT SBL4040PT SBL4045PT
    Contextual Info: SBL4030PT thru SBL4045PT Low VF Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode SBL4030PT SBL4035PT SBL4040PT SBL4045PT Symbol VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 Characteristics @TC=100oC


    Original     		sbl4030ptsbl4045pto-247adsbl4035pt+2sbl4040ptto-247ad PDF

    s3pdb85n18

    Abstract: S3PDB85N16 S3PDB85N08 S3PDB85N12 S3PDB85N14 S3PDB85 pwm INVERTER S3PDB
    Contextual Info: S3PDB85 Three Phase Rectifier Modules Dimensions in mm 1mm=0.0394" Type S3PDB85N08 S3PDB85N12 S3PDB85N14 S3PDB85N16 S3PDB85N18 – + VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 ~~~ Symbol Idav Test Conditions TC=100oC, module o Maximum Ratings


    Original     		s3pdb85s3pdb85n08s3pdb85n12s3pdb85n14+6s3pdb85n16s3pdb85n18100oc50/60hzpwm inverters3pdb PDF

    M5 DIODE 22-35 L

    Abstract: DIODE 22-35 L M5 DIODE 22-35 SDD36 SDD36N08 SDD36N12 SDD36N14 pwm 50hz
    Contextual Info: SDD36 Diode-Diode Modules Dimensions in mm 1mm=0.0394" Type SDD36N08 SDD36N12 SDD36N14 SDD36N16 SDD36N18 Symbol IFRMS IFAVM VRSM V 900 1300 1500 1700 1900 Test Conditions TVJ=TVJM TC=100oC; 180o sine VRRM V 800 1200 1400 1600 1800 Maximum Ratings Unit 60


    Original     		sdd36sdd36n08sdd36n12sdd36n14+9sdd36n16sdd36n18100oc50/60hz180ocm5 diode 22-35 ldiode 22-35 lm5 diode 22-35pwm 50hz PDF

    RBP-400

    Abstract: GP731
    Contextual Info: Surface Mount Band Pass Filter RBP-400+ 292 to 490 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -40 C to 85 C -55oC to 100oC 0.5W at 25oC o o • Good VSWR, 1.5:1 Typ @ Pass Band • Small Size 0.35" X 0.35" • •


    Original     		rbp-400-55oc100ocgp731+32002/95/ecm104389edr-7836au PDF

    gp731

    Abstract: RF band pass filter RBP-275
    Contextual Info: RBP-275+ RBP-275 Surface Mount Band Pass Filter 268 to 282 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -40 C to 85 C -55oC to 100oC 0.5W at 25oC o o • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.35" X 0.35"


    Original     		rbp-275-55oc100oc2002/95/ec+4gp731tb-332pl-176rf band pass filter PDF