US1006DS
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AK Semiconductor
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Surface Mount Ultrafast Recovery Rectifier in TO-252(D-PAK), 10A forward current, 100 to 1000V reverse voltage, 50-75ns reverse recovery time, low forward voltage drop, high surge capability, lead-free. |
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G1006DS
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AK Semiconductor
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Surface mount silicon rectifier in TO-252 package, 10A forward current, 100 to 1000V repetitive peak reverse voltage, low forward voltage drop, glass passivated junction, suitable for general purpose applications.Surface mount silicon rectifier in TO-252 package with reverse voltage ratings from 100 to 1000 V, 10 A forward current, low forward voltage drop, glass passivated junction, and operating temperature up to 150 °C. |
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SF1006DS
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Shandong Jingdao Microelectronics Co Ltd
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10 A glass passivated super fast rectifier with reverse voltage from 100 to 600 V, low forward voltage drop, high surge current capability, and 35 ns maximum reverse recovery time, available in TO-251 and TO-252 packages. |
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SF1006DS
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SLKOR
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100-600 V, 10 A, low forward drop, high efficiency, surge capable, 35ns max recovery, -55 to +150°C. |
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MCR100-6D
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Jiangsu JieJie Microelectronics Co Ltd
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0.8A sensitive gate SCR with 500V repetitive peak off-state and reverse voltage, IGT ≤120uA, in TO-92 package, suitable for high dV/dt applications requiring strong electromagnetic interference resistance. |
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RS1006D1
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JCET Group
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Fast recovery diode in SOD-123 surface mount package with 600 V peak repetitive reverse voltage, 1 A average rectified current, 1.3 V forward voltage at 1 A, and 150 ns reverse recovery time. |
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SF1006DS
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AK Semiconductor
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Surface Mount Superfast Recovery Rectifier in TO-252(D-PAK), 10A forward current, 100 to 600V reverse voltage, glass passivated junction, low forward voltage drop, 35ns reverse recovery time, lead-free.Surface mount superfast recovery rectifier in TO-252 package with reverse voltage ratings from 100 to 600V, 10A forward current, low forward voltage drop, and 35ns maximum reverse recovery time. |
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US1006DS
