1001 TRANSISTOR Search Results

KAF-1001

Abstract: kaf-140 KAF-1401
Contextual Info: KAF-1001 IMAGE SENSOR 1024 H X 1024 (V) FULL FRAME CCD IMAGE SENSOR JULY 20, 2012 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0033 KAF-1001 Image Sensor TABLE OF CONTENTS Summary Specification . 4

Contextual Info: KAF-1001 IMAGE SENSOR 1024 H X 1024 (V) FULL FRAME CCD IMAGE SENSOR JUNE 18, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 1.1 PS-0033 KAF-1001 Image Sensor TABLE OF CONTENTS Summary Specification . 4

rosemount 118mf

Abstract: 118MF ROSEMOUNT LT1001 1001 raytheon rosemount 118mf 1000 LT/SG3527A
Contextual Info: LT-1001 Section 4 LT-1001 Series Precision Operational Amplifiers gain characteristics. A patented, proprietary test method which includes digital Vos nulling after packaging as well as at wafer test tight­ ens the distribution of this parameter such that

LT1001

Abstract: 118mf LT/SG3527A
Contextual Info: Section 4 LT-1001 LT-1001 Series Precision Operational Amplifiers gain characteristics. A patented, proprietary test method which includes digital Vos nulling after packaging as well as at wafer test tight­ ens the distribution of this parameter such that

Contextual Info: H Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1001 Series Features Description Pin Configuration • Frequency Range: 5 to 1000␣MHz The 1001 Series is a thin-film bipolar RF amplifier that uses resistive feedback and active bias

utc 1018

Abstract: hp2 800 232 509R
Contextual Info: Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1001 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1001 Series is a thin-film bipolar RF amplifier that uses resistive feedback and active bias to provide a stable, reliable gain

SK 1117

Contextual Info: 10-1500 MHZ MEDIUM POWER T0-8 CASCADABLE AMPLIFIER HAMP-1001 HAMP-1001 TXV T E C H N IC A L D A T A A P R IL 1985 Features 12.96 0.510 12.44 (0 .490) DIA. ULTRA WIDE 1 dB BANDWIDTH 5-2800 MHz EXCEPTIONAL PHASE LINEARITY 0.5 Degree Deviation from 100 to 1500 MHz

Contextual Info: W haì H E W L E T T f t l f i i PACKARD Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1001 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1001 Series is a thin-film bipolar RF amplifier that uses

1541, transistor

Contextual Info: T tiS l HEW LETT m L fim P A C K A R D Avantek Products Thin-Film Cascadable Amplifier 5 to 1000 MHz Technical Data UTO/UTC 1001 Series Features Description Pin Configuration • Frequency Range: 5 to 1000 MHz The 1001 Series is a thin-film bipolar RF amplifier that uses

test circuits for Mosfet capacitance

Abstract: pulse transformer fet 100C AN-1001 how to test mosfet A More Realistic Characterization of Power MOSFET Output Capacitance Coss
Contextual Info: Application Note AN-1001 A More Realistic Characterization of Power MOSFET Output Capacitance Coss Table of Contents 1. Introduction . 1 Power MOSFETs and switching frequency . 1

ultrasonic probe ge

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave
Contextual Info: California Eastern Laboratories AN-1001 APPLICATION NOTE RECOMMENDED HANDLING PROCEDURES FOR MICROWAVE TRANSISTOR AND MMIC CHIPS INTRODUCTION This document is provided to inform users of some of the handling precautions necessary and the assembly processes

UPA101

Abstract: UPA101-104 Transistor Array differential amplifier UPA101B UPA101G UPA102 UPA102G UPA103 UPA104 RF TRANSISTOR NPN MICRO-X
Contextual Info: California Eastern Laboratories AN-SI-1001 APPLICATION NOTE Ultrahigh Frequency Transistor Arrays: UPA101/102/103/104 INTRODUCTION SUMMARY In recent years there has been a rapidly increasing demand for high-frequency amplifiers and high-speed logic devices,

MJ1000

Abstract: MJ1001 ic 901 MJ1000.1001
Contextual Info: SavantIC Semiconductor Product Specification MJ1000/1001 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·DARLINGTON ·High DC current gain ·Complement to type MJ900/901 APPLICATIONS ·For use as output devices in complementary general purpose amplifier applications

Contextual Info: 2N6282,2N6283,2N6284,2N6285,2N6286,2N6287 File Number 1001 HARRIS SEMICOND SECTOR 5 h E J> 4302271 20-Ampere Complementary N-P-N and P-N-P Monolithic Darlington Power Transistors 0040533 TS1 IHAS T -3 3 ~0 / TERMINAL DESIGNATIONS 60-80-100 Volts, 160 Watts

2N6282 RCA

Abstract: 2N6284 RCA 2N6282 2N6285 RCA 2N6287 RCA 2n6285 2N6287 cs 6-07 amplifier transistor 2N6284 2N6283
Contextual Info: 3875081 G E SOLID STATE- 01 ¿ F § 3fl7S0fll □D172Bci b | File Number 1001 DarlingtonPowerTransi 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere Complementary N-P-N and P-N-P Monolithic

MJ1000

Abstract: MJ900 MJ901 mj1001 ic 901 adc 515 Comset
Contextual Info: COMSET SEMICONDUCTORS MJ900/901/1000/1001 COMPLEMENTARY POWER DARLINGTONS TO-3 The MJ900, MJ901, MJ1000 and MJ1001 are silicon epitaxial-bas transistors in monolithic Darlington configuration, and are mounted in JEDEC TO-3 metal case. They are intended for use in power linear and

700 v power transistor

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOF 2SD 1001 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTIO N The 2SD1001 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. F E A TU R E S • World Standard M iniature Package

KTA1001

Abstract: MARKING 1fe
Contextual Info: SEMICONDUCTOR T E C H N IC A L D A T A KT A 1001 EPITAXIAL PLANAR PNP TRANSISTOR CAMERA STROBO FLASH APPLICATION. HIGH CURRENT APPLICATION. FEATURES • hFE=100~320 VCe=-2V, Ic=-0.5A . • hFE=70(Mm.) (Vce=-2V, IC=-3A). • Low Collector Saturation Voltage.

MJ900

Abstract: MJ1000 MJ901 3001 pnp MJ1001 MJ3001 B 817 c MJ2500 MJ2501 2N6053
Contextual Info: - , SGS-THOMSON MJ900 901 1 Ë fKl MILifgTF!Hi ili] S MJ1000/1001 COMPLEMENTARY POWER DARLINGTONS lE S C R lP T IO N tie MJ900, MJ901, MJ1000 and MJ1001 are siii:on epitaxial-base transistors in monolithic Darlingon configuration, and are mounted in Jedec TO-3

ASI1001

Abstract: ASI10522
Contextual Info: ASI1001 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250 2L FLG The ASI 1001 is Designed for General Purpose Class C Power Amplifier Applications up to 1500 MHz. A ØD B .060 x 45° CHAMFER C E FEATURES: G • PG = 12 dB min.at 1.0 W / 1,000 MHz

Contextual Info: Application Note 1001 How to Control Motor Fan Speed of AM4961 Prepared by Dong Xiang Lian System Engineering Dept. 1. Operating Diagram VPWM Voltage VCC 28% Lowest speed setting voltage Open Thermistor fCP=25kHz (CCP=100pF) VCPH (VCC 30%) VMIN Voltage COSC Output

gefran 200 -2r

Abstract: gefran 500 controller manual gefran 500 manuale manual gefran 1000 gefran 1101 gefran 800 manual gefran 500 programmazione gefran 500 programming gefran 500 manual gefran 2400
Contextual Info: 1000 / 1001 / 1101 ISO 9001 SOFTWARE 11.x / 12.x cod. 80343 / Edit. 11- 07/01 Italiano TERMOREGOLATORI CONFIGURABILI - Manuale d’uso 2 - User’s Manual 10 - Bedienungsanleitung 18 - Manuel d’Utilisation 26 - Manual de Uso 34 - Manual do Usuário 42 English

hfc4511

Abstract: HFC4511B HCF4511BE HCF4511BEY 4511B HCC4511BF HCF4511BC1 HCF4511BM1
Contextual Info: HCC/HCF4511B BCD-TO-SEVEN SEGMENT LATCH/DECODER/DRIVER . . . . . . . HIGH-OUTPUT-SOURCING CAPABILITY up to 25 mA INPUT LATCHES FOR BCD CODE STORAGE LAMP TEST AND BLANKING CAPABILITY 7-SEGMENT OUTPUTS BLANKED FOR BCD INPUT CODES > 1001 QUIESCENT CURRENT SPECIFIED TO 20V

ic 6283 circuit diagram

Abstract: d 6283 ic l 6283 d 6282 ic 2N6282 IC 6283 2N 6287 N6283
Contextual Info: File Num ber 1001 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere Complementary N-P-N and P-N-P Monolithic Darlington Power Transistors TERMINAL DESIGNATIONS 60-80-100 Volts, 160 Watts Gain of 2400 Typ. at 10 A (2N6282, 2N6283, 2N6284) Gain of 3500 (Typ.) at 10 A (2N6285, 2N6286, 2N6287)