1001 DL Search Results

2N6282 RCA

Abstract: 2N6284 RCA 2N6282 2N6285 RCA 2N6287 RCA 2n6285 2N6287 cs 6-07 amplifier transistor 2N6284 2N6283
Contextual Info: 3875081 G E SOLID STATE- 01 ¿ F § 3fl7S0fll □D172Bci b | File Number 1001 DarlingtonPowerTransi 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere Complementary N-P-N and P-N-P Monolithic

ultrasonic probe ge

Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines GaAs FET chip ultrasonic bond AN-1001 Ultrasonic bubble kulicke Soffa nec microwave
Contextual Info: California Eastern Laboratories AN-1001 APPLICATION NOTE RECOMMENDED HANDLING PROCEDURES FOR MICROWAVE TRANSISTOR AND MMIC CHIPS INTRODUCTION This document is provided to inform users of some of the handling precautions necessary and the assembly processes

10SPR01

Abstract: 10SPR04 10SP 10SPR02 10SPR03 10SPR05
Contextual Info: BIOTEC ELECTRONICS CORP SflE D Efiim D? GDODDS^ DIOTEC ELECTRONICS CORP. DlC TAG « D I X Data Sheet No.: SESA-1001-A 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 10 AMP SUPER-EFFICIENT RECTIFIERS Fully-Insulated FEATURES:

sac 326

Abstract: 10SPR01 10SPR02 10SPR03
Contextual Info: BIOTEC ELECTRONICS CORP DlC SflE D SflMTlD? GDODDS^ TflO « D I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: SESA-1001-A 10 AMP SUPER-EFFICIENT RECTIFIERS Fully-Insulated FEATURES:

Contextual Info: eZ80190 eZ80190 Webserver Product Specification PRELIMINARY PS006606-1001 ZiLOG Worldwide Headquarters • 910 E. Hamilton Avenue • Campbell, CA 95008 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether

AUDIO CIRCUIT 6283

Abstract: ic 6283 circuit diagram l 6283 2N6282 RCA 2N6282 d 6283 ic d 6282 ic IC 6283 2N6287 RCA
Contextual Info: 3875081 G E SOLID STATE- 01 inf| 3a7SQfll QOlVaBT b |~ 7- J J - $ 1 _ Darffngton Power Transistors File Number 1001 2N6282, 2N6283, 2N6284, 2N6285, 2N6286, 2N6287 20-Ampere Complementary N-P-N and P-N-P Monolithic Darlington Power Transistors TERMINAL DESIGNATIONS

Contextual Info: HEMT-3301/HEMT-1001 940 nm High Radiant Emitters Datasheet Description Features The HEMT-3301 and HEMT-1001are infrared emitters, using amesa structure GaAs on GaAsinfrared diode, IRED, optimizedfor maximum quantum efficiencyat a peak wavelength of 940 nm.The HEMT-3301 and HEMT-1001emitters

gefran 200 -2r

Abstract: gefran 500 controller manual gefran 500 manuale manual gefran 1000 gefran 1101 gefran 800 manual gefran 500 programmazione gefran 500 programming gefran 500 manual gefran 2400
Contextual Info: 1000 / 1001 / 1101 ISO 9001 SOFTWARE 11.x / 12.x cod. 80343 / Edit. 11- 07/01 Italiano TERMOREGOLATORI CONFIGURABILI - Manuale d’uso 2 - User’s Manual 10 - Bedienungsanleitung 18 - Manuel d’Utilisation 26 - Manual de Uso 34 - Manual do Usuário 42 English

S2L 92

Contextual Info: 19-1001; Rev 0; 8/04 KIT ATION EVALU E L B AVAILA 12-Bit, 80Msps, 3.3V IF-Sampling ADC Applications IF Communication Receivers Cellular, Point-to-Point Microwave, HFC, WLAN Ultrasound and Medical Imaging Portable Instrumentation Features ♦ Direct IF Sampling Up to 400MHz

0X801

Abstract: OP BASEBAND 80MHZ MAX1206 MAX1207 MAX1208 MAX1209 MAX1209ETL MAX1211 MAX1211EVKIT MAX12553
Contextual Info: 19-1001; Rev 0; 8/04 KIT ATION EVALU E L B AVAILA 12-Bit, 80Msps, 3.3V IF-Sampling ADC Applications IF Communication Receivers Cellular, Point-to-Point Microwave, HFC, WLAN Ultrasound and Medical Imaging Portable Instrumentation Features ♦ Direct IF Sampling Up to 400MHz

Contextual Info: 19-1001; Rev 0; 8/04 12-Bit, 80Msps, 3.3V IF-Sampling ADC Applications Features ♦ Direct IF Sampling Up to 400MHz ♦ Excellent Dynamic Performance 68.0dB/66.5dB SNR at fIN = 70MHz/175MHz 85.1dBc/85.5dBc SFDR at fIN = 70MHz/175MHz ♦ 3.3V Low-Power Operation

Z85C3010

Contextual Info: Z80C30/Z85C30 CMOS SCC Serial Communications Controller Product Specification PS011702-1001 ZiLOG Worldwide Headquarters • 910 E. Hamilton Avenue • Campbell, CA 95008 Telephone: 408.558.8500 • Fax: 408.558.8300 • www.ZiLOG.com This publication is subject to replacement by a later edition. To determine whether

hfc 4094 ic application

Abstract: ic hfc 4094 MAX1206 MAX1207 MAX1208 MAX1209 MAX1209ETL MAX1211 MAX1211EVKIT MAX12553
Contextual Info: 19-1001; Rev 0; 8/04 12-Bit, 80Msps, 3.3V IF-Sampling ADC Applications Features ♦ Direct IF Sampling Up to 400MHz ♦ Excellent Dynamic Performance 68.0dB/66.5dB SNR at fIN = 70MHz/175MHz 85.1dBc/85.5dBc SFDR at fIN = 70MHz/175MHz ♦ 3.3V Low-Power Operation

hfc 4094 ic application

Abstract: binary to gray code converter ic hfc 4094 OP BASEBAND 80MHZ 74205
Contextual Info: 19-1001; Rev 0; 8/04 KIT ATION EVALU E L B AVAILA 12-Bit, 80Msps, 3.3V IF-Sampling ADC Applications Features ♦ Direct IF Sampling Up to 400MHz ♦ Excellent Dynamic Performance 68.0dB/66.5dB SNR at fIN = 70MHz/175MHz 85.1dBc/85.5dBc SFDR at fIN = 70MHz/175MHz

10SPR04

Contextual Info: BIOTEC ELECTRONICS CORP SflE D E fiim D ? GDODDS^ DIOTEC ELECTRONICS CORP. D lC TAG « D I X Data Sheet No.: SESA-1001-A 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 10 AMP SUPER-EFFICIENT RECTIFIERS Fully-Insulated FEATURES:

utc 1018

Abstract: Avantek cotton AVANTEK utc UTC1001
Contextual Info: MRE J> m AVANTEK INC 000flG2cJ 3 B A V A UTO/UTC 1001 Series Thin-Fllm Cascadable Amplifier 5 to 1000 MHz •- ■ FEATURES APPLICATIONS • • • • • IF/RF Amplification • Low Power Systems Frequency Range: 5 to 1000 MHz Medium Gain: 15.0 dB Typ

HEMT-3301

Abstract: HEMT HEMT-1001
Contextual Info: HEMT-3301/HEMT-1001 940 nm High Radiant Emitters Data Sheet Description Features The HEMT-3301 and HEMT-1001are infrared emitters, using amesa structure GaAs on GaAs infrared diode, IRED, optimized for maximum quantum efficiency at a peak wavelength of 940 nm. The HEMT-3301 and HEMT1001emitters are untinted, undiffused plastic packages

SiS5511

Contextual Info: SÌS5511 PCI/ISA Cache Memory Controller 2.11 Pin Assignment and Description 2.11.1 Pin Assignment 0a1 hj tJt 1001 101 CASEOSCASE 1#CASE2#' CASE3#— I CASE4#- 1 GND—I 156 155 5 CASES#— C ASE«CASE7#— 10 VCC35CASOO#CAS01#— C A S0 2 # GND15 C A S0 3 # CAS04#-CAS05#

UTD-1000

Abstract: UTD1000
Contextual Info: Q UTD-1000/1001 Analog Level Detectors 10 to 1000 MHz avaimtek FEATURES APPLICATIONS • -1 2 0 mV O utput f o r -1 0 dBm Pin • ±1.0 dB Flatness • 50- o r 300-ohm Im pedance • S pecifically Designed fo r System B u ilt-in Test • RF/IF Level M onitor

Contextual Info: AVANTEK INC MIE ]> • U M l T b b DOQflGS*î 3 M A V A U T O /U T C 1001 Series Thin-Film Cascadable Amplifier 5 to 1000 MHz . FEATURES APPLICATIONS • • • • • IF/RF Amplification • Low Power Systems Frequency Range: 5 to 1000 MHz Medium Gain: 15.0 dB Typ

Contextual Info: S M A 1001 2048-BIT SEMICONDUCTOR M E M O R Y ARRAY PR E LIM IN A R Y PR O D U C T SPECIFICATION 2048 BIT S EM IC O N D U C TO R R I M STORAGE ARRAY FEATURES: • High density semiconductor storage • Adaptable to a wide variety of memory systems • Isolated sense line

Contextual Info: A P T 1001 R B V R 1000v 11 a -i.ooon ADVANCED W 7Æ P o w e r T e c h n o lo g y POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V

RX-3 -G

Abstract: molex 71153 71153
Contextual Info: •3 4 .6 5 - P2 PI WIRNG DIAGRAM P1 END PM 1 2 3 * 5 6 7 El P2 END PIN 1 SIGNAL G RxRx* G Tx+ T xG 2 MU SIGNAL G R xRx+ G Tx+ T xG IFIn PART NUMBER 73939-1001 73939-1002 73939-1003 73939-1004 73939-1005 73939-1006 MATERIALS CABLE - FULLY SHELDED PER 71153-»««»

Contextual Info: D A C 1 0 0 0 /D AC 1001 / D AC 10 0 2 /D AC 1 0 0 6 / D AC 1 0 0 7 / D A C 1008 juP Com patible, D o u ble-B uffered D to A C o n verters General Description Features The DAC1000/1/2 and DAC1006/7/8 are advanced CMOS/Si-Cr 10-, 9- and 8-bit accurate multiplying DACs