1000-1 DIODES Search Results

Contextual Info: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 IFAVM = 2x60 A vRRM= 1000 v trr — v RSM Type V rrm V V 1000 1000 Symbol 1 > miniBLOC, SOT-227 B 1 DSEI 2x61-10B Test Conditions Maximum Ratings (per diode) 'frm "^vj “ Tvjm Tc= 50°C; rectangular, d = 0.5

Diode 1N4007 DO-7 Rectifier Diode

Abstract: 1N40075 BYX/400 1N4007 RECTIFIER DIODE 4007 uf 1200 BAX12 BYW52 BYW53 BYW54 BYW55
Contextual Info: Diodes Rectifier and Avalanche diodes Type BY 202 BY 203 BY 204 Maximum ratings Notes Characteristics V 4 8006 90 <300 £ 1 .0 200 £ 507) Contact protection diode 2 5 1000') 200 £100 £ 1 .2 1000 £ 3503) Fast rectifier diodes 3 5 1000') 300 £100 <1.2

Contextual Info: •_4bßb22b 0 0 0 1 Ö2 S 5^2 M I X Y □IXYS Fast Recovery Epitaxial Diodes DSEI 2x61 lFAV = 2x60 A V rrm trr = 600-1000 V < 50 ns miniBLOC, SOT-227 B V v*» V 640 800 1000 600 800 1000 Type p ° ! 3 •- — Symbol Test Conditions 'frms *FAV* 1 Ifmi

Contextual Info: B Y T 2 3 0 P IV - 1 0 0 0 B Y T 2 3 1 P IV - 1 0 0 0 FAST R ECO VER Y R ECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS I f a v 2x30 A V rrm 1000 V V f (max) 1.8 V trr (max) 80 ns ESS ˌ K2 A2 K1 A1 A2 K1 K2 A1 BYT231PIV-1000 BYT230PIV-1000 FEATURES AND BENEFITS

SDD25N03

Abstract: SDD25 SDD25N01 SDD25N02
Contextual Info: SDD25 Discrete Diodes Dimensions TO-247AD 3 2 1 SDD25N01 SDD25N02 SDD25N03 SDD25N04 SDD25N05 SDD25N06 SDD25N07 1 VRSM V 50 100 200 400 600 800 1000 Symbol IFRMS IF AV M 2 3 VRRM V 50 100 200 400 600 800 1000 Test Conditions TVJ=TVJM TC=100oC; 180o sine Dim.

Contextual Info: SEM IK R G N 1SE D I INC f i l i t i t,71 GGQIVO? 4 | T 33 seMSKRDn Maximum Ratings Symbol Conditions VcEVsus VCEV VcBO V ebo lc I! = 1 II I ro < m < CD m ICM = lc D .C. tp = 1 ms lc If 1000 1000 1000 7 50 100 1 A.Vbe = - 2 V = • Ib Ptot Tvi Tease = 25 °C

170M6462

Abstract: 170H3006 170M7031 170H3027 170M8554 170M8608 170M2666 170M7636 170M7595 170M6814
Contextual Info: High Speed Fuses Square Body Fuses General Information Introduction Square Body Contents Page Application Information 115-116 Volts IEC/UL Size 000,00 690/700 1*, 1, 2, 3 1*, 2, 3 4 23, 24 00, 1, 2, 3 00 1000 1*, 1, 2, 3 4 24 1*, 1, 2, 3 1250/1300 1000-2000

PIV-1000

Abstract: ISOTOP BYT261 BYT261PIV-1000 BYT60P-1000
Contextual Info: B Y T 6 0 P -1 0 0 0 B Y T 2 6 1 P IV - 1 0 0 0 FAST RECOVERY RECTIFIER DIODES MAJOR PRODUCT CHARACTERISTICS If a V v rrm V f (max) trr (max) 2 x 60 A l~ * ~ l 1000 V K1 1.8 V 1 A1 BYT261 PIV-1000 70 ns FEATURES AND BENEFITS • ■ ■ . VERY LOW REVERSE RECOVERYTIME

GE C712

Abstract: C712 thyristor GE C712 thyristor A430 A430A A430B A437A A437B A570 A570A
Contextual Info: RECTIFIERS 183 750 TO 1500 AMPERES GE TYPE JEDEC SPECIFICATIONS_ . Max. average forward current F M A V (1 phase operation) (A) A437 A596 A430 A 54 0 A696 A570 A640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80 80 750 -j >T c - (°C)

SF1154

Abstract: A430 A430A A430B A437A A437B A570 A570A A570B A596
Contextual Info: RECTIFIERS 183 750 TO 1500 AMPERES GE TYPE JEDEC SPECIFICATIONS_ . Max. average forward current FM A V (1 phase operation) (A) A437 A 596 A430 A 540 A 696 A 570 A 640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80 80 750 -j >T c - (°C)

A540

Abstract: A430E A430 A430A A430B A437A A437B A570 A570A A570B
Contextual Info: RECTIFIERS 183 750 TO 1500 AMPERES GE TYPE JEDEC SPECIFICATIONS_ . Max. average forward current FM A V (1 phase operation) (A) A437 A 596 A430 A 540 A 696 A 570 A 640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80 80 750 -j >Tc - (°C)

A570B

Abstract: A430 A430A A430B A437A A437B A570 A570A A596 A640
Contextual Info: RECTIFIERS 183 750 TO 1500 AMPERES GE TYPE JEDEC SPECIFICATIONS_ . Max. average forward current FM A V (1 phase operation) (A) A437 A 596 A430 A 540 A 696 A 570 A 640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80 80 750 -j >T c - (°C)

UJ160

Abstract: A430PE A430 A430A A430B A437A A437B A570 A570A A570B
Contextual Info: RECTIFIERS 183 750 TO 1500 AMPERES GE TYP E JED EC SPECIFICATIONS_ . Max. average forward current FM A V (1 phase operation) (A) A437 A 596 A430 A 540 A 696 A 570 A 640 - - - - - - - 750 1000 1000 1000 1500 1500 65 126 100 - 80 80 750 -j >T c - (°C)

24v 12v 10A regulator

Abstract: 12v 10A regulator NMX-1003-0512 NMX-1004-1203 NMX-1004-1205 NMX-1004-1212 NMX-1004-1224
Contextual Info: 1000 WATTS POWER FACTOR CORRECTED MULTIPLE OUTPUT, FORCED CURRENT SHARING NMX-1000 Featuring: • Forced current sharing for N +1 redundancy • Remote sense on outputs #1, 2 and 3 • “Zero wire” slope program current sharing on outputs #2 and 3 for redundancy

diode k6

Abstract: BC POWER MODULE
Contextual Info: BY 500-50.BY 500-1000 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module ,1 Axial lead diode Fast silicon rectifier diodes BY 500-50.BY 500-1000 8  9  2  9  9

5b1 transistor

Abstract: transistor 5B1 5B1 IR 6B2 transistor 40 TQFN 5x5 6B1 transistor MAX4890 MAX4890ETJ MAX4891 MAX4891ETJ
Contextual Info: 19-3577; Rev 1; 8/05 10/100/1000 Base-T Ethernet LAN Switch The MAX4890/MAX4891/MAX4892 high-speed analog switches meet the needs of 10/100/1000 Base-T applications. These devices switch the signals from two interface transformers and connect the signals to a single 10/100/1000 Base-T Ethernet PHY, simplifying

ERA18-02

Abstract: ERB06 ERB43-04 ERA22-02 ERA22-04 ERA22-06 ERA22-08 ERA22-10 ERA34-10 ERA91-02
Contextual Info: Fast Recovery Diodes Single package Ratings and characteristics Type Maximum rating V rrm lo * 1 If SM * 2 Volts Amps. Amps. ERA34-10 ERA91-02 1000 200 ERA22-02 200 ERA 22-04 400 600 ERA22-06 ERA22-08 1000 ERB 43-04 40 0 ERB43-06 600 ERB43-08 ERA38-04 400

Contextual Info: 51E D Ô13bb71 DDD371Ô M7T se MIKRDN SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Ptot Tj, Tslg Visol hum idity climate C onditions 1 • SEK G Values . 102 D 122 D 1000 I 1200 1000 1 1200 400/300 800/600 ±20 2500 - 5 5 . . .+150

Avantek S

Contextual Info: AVANTEK G P L -1 001 V o lta g e C o n tro lled S ig n al Lim iter 5 to 1000 M H z FEATURES APPLICATIONS • • • • 5 to 1000 MHz Frequency Coverage Voltage Controllable VSWR <2.0:1 Protection for Detectors, Mixers, and Amplifiers Cascadable Gain Control

Nippon capacitors

Contextual Info: 19-1714; Rev 1; 7/12 ±15kV ESD-Protected, Low-Voltage, SPDT/SPST, CMOS Analog Switches Features ♦ ESD-Protected NO, NC ±15kV—Human Body Model ±15kV—IEC 1000-4-2, Air-Gap Discharge ±8kV—IEC 1000-4-2, Contact Discharge ♦ Guaranteed On-Resistance

UTD-1000

Abstract: UTD1000
Contextual Info: Q UTD-1000/1001 Analog Level Detectors 10 to 1000 MHz avaimtek FEATURES APPLICATIONS • -1 2 0 mV O utput f o r -1 0 dBm Pin • ±1.0 dB Flatness • 50- o r 300-ohm Im pedance • S pecifically Designed fo r System B u ilt-in Test • RF/IF Level M onitor

Contextual Info: SIE D m Ö13bb71 00D3bMb 452 « S E K G SEMIKRON SEMIKRON INC Absolute Maximum Ratings Sym bol VcES VcGR lc ICM V ges Plot Tj, Tstg Visol hum idity climate C onditions Values . 101 ' D , .1 2 1 D 1000 1000 I 1200 i 1200 40/25 80/50 ±20 300 - 5 5 . . .+150

UTD-1000

Contextual Info: W hol HEW LETT mütiM P A C K A R D Avantek Products Analog Level Detectors 10 to 1000 MHz Technical Data UTD-lOOO/lOOl Features Description Pin Configuration • -1 2 0 mV O utput for -1 0 dBm Pin The UTD-1000 has an input im pedance of 50 ohms. The UTD-1001 has an input im pedance

13.56mhz c class amp

Abstract: ferrite core binocular air variable capacitor mp850 25.0 DE275-102N06A
Contextual Info: DE275-102N06A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient