1000-1 DIODES Search Results

servo schematic diagram

Abstract: weight sensors MIL-PRF-39023
Contextual Info: SENSORS & CONTROLS 6015 SERIES INC. SPECTRUM 1-7/16 In. Dia. Servo Mount PRECISION POSITION SENSORS STANDARD PRODUCT OFFERING SS&C PART NUMBER RESISTANCE 6015-1000-030 1KΩ ±10% 6015-1002-030 5KΩ ±10% 6015-1003-030 10KΩ ±10% 20° .093 .005 .062 .005

Contextual Info: GI250-1 thru GI250-4 Vishay General Semiconductor High Voltage Glass Passivated Junction Rectifier Major Ratings and Characteristics IF AV 0.25 A VRRM 1000 V to 4000 V IFSM 15 A IR 5.0 µA VF 3.5 V Tj max. 175 °C d* e t n Pate * Glass-plastic encapsulation

TAPEHEAD

Abstract: HA4741 HA5104 OP27 OP470 OP471 RM4156
Contextual Info: a Very Low Noise Quad Operational Amplifier OP470 FEATURES Very Low-Noise, 5 nV/÷Hz @ 1 kHz Max Excellent Input Offset Voltage, 0.4 mV Max Low Offset Voltage Drift, 2 ␮V/؇C Max Very High Gain, 1000 V/mV Min Outstanding CMR, 110 dB Min Slew Rate, 2 V/␮s Typ

Contextual Info: LT3486 Dual 1.3A White LED Step-Up Converters with Wide Dimming DESCRIPTION FEATURES n n n n n n n n n n n Wide 1000:1 PWM Dimming Range with No ColorShift Independent Dimming and Shutdown Control of the LED Drivers Drives Up to 16 White LEDs at 25mA (8 per Driver)

Contextual Info: 1000 Axial Part Number 50Hz is with Half-cycle Sinewave Heatsink Single Shot Tj (°C) IR (H) (µA) IR (µA) Tstg (°C) VF (V) max IF (A) t rr VR = VRM VR = VRM Ta (°C) max max 2 t rr 1 (µs) : I F / I R (=I F) 90% Recovery Point (ex. I F / I R =100mA/100mA 90% Recovery Point)

Contextual Info: MR 820.MR 828 .3 Axial lead diode Fast silicon rectifier diodes MR 820.MR 828 Forward Current: 5 A Reverse Voltage: 50 to 1000 V 9  :  4  :  : , 1,  4  :  : ,   :    : 3  9 % 9 %9 % 9 %" 9 % #99 #  - 

Amplifier s thermocouple texas

Abstract: INA120 INA120AP INA120BG INA120CG X1000 Amplifier k thermocouple texas chromel seebeck Table 18a2g
Contextual Info: INA120 Precision INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION ● LOW OFFSET VOLTAGE: 25µV max ● LOW OFFSET VOLTAGE DRIFT: 0.25µV/°C max ● PIN-STRAPPED GAINS: 1, 10, 100, 1000 The INA120 is a precision instrumentation amplifier ideal for accurate signal acquisition. It combines precision, protected-input operational amplifiers, lasertrimmed gain-setting resistors, and a high commonmode rejection difference amplifier on a single chip.

thermocouple multiplexer

Abstract: THERMOCOUPLE AMPLIFIER INA120 INA120AP INA120BG INA120CG X1000 custom precision rESISTOR network
Contextual Info: INA120 Precision INSTRUMENTATION AMPLIFIER FEATURES DESCRIPTION ● LOW OFFSET VOLTAGE: 25µV max ● LOW OFFSET VOLTAGE DRIFT: 0.25µV/°C max ● PIN-STRAPPED GAINS: 1, 10, 100, 1000 The INA120 is a precision instrumentation amplifier ideal for accurate signal acquisition. It combines precision, protected-input operational amplifiers, lasertrimmed gain-setting resistors, and a high commonmode rejection difference amplifier on a single chip.

siemens igbt BSM 150 gb 100 d

Abstract: siemens igbt BSM 150 Gb 160 d siemens igbt BSM 100 gb DDMS677 GG45 SIEMENS VF 100 200AH tt200a
Contextual Info: bOE D • fl23Sfc.QS G G 4 5 Ô 7 2 05b « S I E G SIEMENS S IE H E N S A K T IE N 6 E S E L L S C H A F T ' & ' - a f BSM 100 GB 100 D BSM100 GAL 100 D IGBT Module Preliminary Data v CE = 1000 v / c = 2 x 1 3 5 A at Tc = 2 5 C I c = 2 x 100 A at r c = 80 C

Contextual Info: GL 1A.GL 1M 5  Surface mount diode Standard silicon rectifier diodes GL 1A.GL 1M Forward Current: 1 A Reverse Voltage: 50 to 1000 V Features                      !"#$ %  &  '  '  '       ( '

Contextual Info: SILICON PIN DIODES High voltage PIN diodes HIGH VOLTAGE PIN DIODES Applications Characteristics These devices are most often used to control Radio Frequency RF and microwave signals. Typically, high-voltage PIN diodes are found in high power switches and phase shifters.

BYV255V200

Abstract: 1n5819 MINIMELF PACKAGE BYV255V-200 BAS70WFILM 1N5819 SOD-323 STPS40H100CW 1N5819 SOD-123 1n5817 SOD-123 stth30r03cg STPS1545CR
Contextual Info: Rectifiers High Power Efficiency Quick Reference Guide 20V, 30V and 40V SIGNAL SCHOTTKY DIODES Voltage max V Current (mA) P/N VF max @ IF (V) (mA) 10 20 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 40 40 40 40 3000 350 100 100 100 100 100 200 200

diode IN456

Abstract: IN456
Contextual Info: 1N456 I n ter n a t/ onal S e m ic o n d u c t o r I n c . thru 1N463/A LOW LEAKAGE DIODES And Other Diodes DIFFUSED SILICON PLANAR ABSOLUTE MAXIMUM RATINGS NoteD Tem peratures S to ra g e T e m p e ra tu re : • M axm um J u n c tio n O p e ra tin g T e m p e ra tu re :

A15QS

Abstract: A15QS200
Contextual Info: AMP-TRAP –Form 101 A15QS SEMICONDUCTOR PROTECTION FUSES A15QS Amp-Trap® Form 101 Semiconductor Protection fuses were designed for the specific protection of diodes and other semiconductor devices rated 150VAC/DC. The A15QS product line’s compact design is

1SMA4761 R2

Abstract: K13 diode
Contextual Info: 1SMA4737 thru 1SMA200Z Taiwan Semiconductor CREAT BY ART Surface Mount Silicon Zener Diodes FEATURES - Built-in strain relief - Ideal for automated placement - Glass passivated junction - Low inductance - Typical IR less than 1uA above 11V - Moisture sensitivity level : level 1, per J-STD-020

MUR160G

Abstract: MUR120G MUR110G mur120 MUR105 MUR105G MUR105RL MUR110 MUR115 MUR130
Contextual Info: MUR120 Series Preferred Devices SWITCHMODEt Power Rectifiers MUR105, MUR110, MUR115, MUR120, MUR130, MUR140, MUR160 http://onsemi.com The MUR120 series of SWITCHMODE power rectifiers are designed for use in switching power supplies, inverters and as free wheeling diodes.

Contextual Info: P 1000 A.P 1000 S &  Axial lead diode Standard silicon rectifier diodes P 1000 A.P 1000 S <  =  6  =  = 2 02  6  =  = 2   =    = )   3 :  3 A  3 5  3 B  3 ;  3 C  3  #<< # , 3  " 

W04 bridge rectifier

Abstract: S1NB60 55 KBPC3510 S1NB60 70 S1NB60 43 w08 bridge rectifier S1ZB60 W005S DI101 DI102
Contextual Info: SEMICONDUCTORS DIODES, Bridge Rectifier A range of surface mount and through hole bridge rectifiers offering current ratings from 0.8 Amp to 35 Amp. 0.8 Amp VRRM V 1N 1Z Supplied taped and reeled. Manufacturer: Shindengen Device & Order Code IFAV (A) at Tamb (°C)

SD23

Contextual Info: Bulletin I2094 rev. A 09/94 SD233N/R SERIES FAST RECOVERY DIODES Stud Version Features 235A High power FAST recovery diode series 4.5 µs recovery time High voltage ratings up to 4500V High current capability Optimized turn on and turn off characteristics

Contextual Info: SD603C.C Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 600 A FEATURES • High power FAST recovery diode series • 1.0 to 2.0 µs recovery time RoHS COMPLIANT • High voltage ratings up to 2200 V • High current capability

Contextual Info: SD453N/R Series Vishay High Power Products Fast Recovery Diodes Stud Version , 400/450 A FEATURES • • • • • • • • • • • • • B-8 PRODUCT SUMMARY IF(AV) 400/450 A High power fast recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 2500 V

SMD TRANSISTOR MARKING 5c

Abstract: smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B
Contextual Info: COMCHIP Small Signal Transistor SMD Diodes Specialist BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25 OC) -Collector current ICM: -0.1A

gdz2v

Abstract: T4 SOD-323
Contextual Info: GDZ-V-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES • Silicon planar power Zener diodes • Low Zener impedance and low leakage current • Popular in Asian designs • Compact surface mount device • Ideal for automated mounting

MM3Z10VT1

Abstract: MM3Z11VT1 MM3Z12VT1 MM3Z13VT1 MM3Z15VT1 MM3Z16VT1 MM3Z18VT1 MM3Z20VT1 MM3Z22VT1 MM3Z24VT1
Contextual Info: MM3Z2V4T1 SERIES Zener Voltage Regulators 200 mW SOD−323 Surface Mount This series of Zener diodes is packaged in a SOD−323 surface mount package that has a power dissipation of 200 mW. They are designed to provide voltage regulation protection and are especially