100-C09 10 Search Results

HTSS242150

Abstract: HTSS372125 HTSS242125 Hi-Tech Fuses
Contextual Info: Trans-Guard OS Shorty Fuse C A ⁄4-20 threaded hole 1 ⁄2" deep both ends 1 Dimensional Information NOMINAL FUSE VOLTAGE RATING (KV) 8.3 17.2 15.5 23.0 38.0 CURRENT RATING (AMPS) FUSE CAT. NO. 40 HTSS232040 50 65 80 100 125 150 165 200 30 40 50 65 80

Power MOSFET SOT-223

Abstract: sot-223 code marking tsm1n45 power mosfet to92 07 MARKING CODE MOSFET TSM1N45CT TO-223 MOSFET TSM1N45CW mosfet to92
Contextual Info: TSM1N45 450V N-Channel Power MOSFET TO-92 SOT-223 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS V RDS(on)(Ω) ID (A) 450 4.25 @ VGS =10V 0.25 General Description The TSM1N45 is N-Channel enhancement mode power field effect transistors are produced using planar DMOS

FR1003G

Abstract: 1004G 1001G 94v-o 1002G 1003G 1006G FR1001G FR1007G
Contextual Info: FR1001G - FR1007G Pb 10.0 AMPs. Glass Passivated Fast Recovery Rectifiers TO-220AB RoHS COMPLIANCE Features Glass passivated chip junction. High efficiency, Low VF High Current capability High reliability High Surge current capability Low power loss For use in low voltage , high frequency inventor,

smd code c09

Contextual Info: TS4448 RW 350mW High Speed SMD Switching Diode Small Signal Diode 1005 A D B C Features —Designed for mounting on small surface. —Extremely thin/leadless package —High mounting capability,strong surage with stand, high reliability. —Pb free version and RoHS compliant

GBU 08

Abstract: GBU1001 GBU1007
Contextual Info: GBU1001 - GBU1007 Pb Single Phase 10.0 AMPS. Glass Passivated Bridge Rectifiers GBU RoHS COMPLIANCE Features — UL Recoganized File # E-326243 — Glass passivated junction — Ideal for printed circuit board — High case dielectric strength of 1500Vrms — Plastic material has Underwriters laboratory

Contextual Info: TS4448 RW 350mW High Speed SMD Switching Diode Small Signal Diode 1005 A D B C Features ­Designed for mounting on small surface. ­Extremely thin/leadless package ­High mounting capability,strong surage with stand, high reliability. ­Pb free version and RoHS compliant

Contextual Info: CONDUCTIVE POLYMER ALUMINUM SOLID CAPACITORS Large capacitance Series CF • Features: 105℃,2000hrs, Super Low ESR & large capacitance ■ Recommended Applications: Motherboard, DC/DC Converter , Adapter , SPS ,VCR , camcorder , DSC , PDA, HD Drive , MO Drive , DVD Drive, Navigation system,

HTDS342125

Abstract: HTSS232065
Contextual Info: PROTECTION AND CONTROL Trans-Guard OS and OS Shorty Fuses “B” “C” OS Backup Fuses “A” 1/4”-20 threaded hole 1/2” deep both ends Table 1 – DIMENSIONAL Information for Trans-Guard™ OS Fuses Nominal Fuse Voltage Rating (kV) 8.3 15.5 23.0

marking code IR10 diode

Abstract: 1620ct C4511 MUR1 1640CT 1660CT MUR1620CT MUR1660CT ATCR
Contextual Info: s TAIWAN SEMICONDUCTOR K RoHS MUR1620CT - MUR1660CT 16.0 AMPS. Switchmode Power Rectifiers TO-22QAB COMPLIANCE 85(4.70) .175(4.4 .412(10.5) MAX , I 13(2.87) 03(2.62) ^ <> -y❖ ^ ^ PIN1 .045(1.14) / d —t Features .05511.40) DIA .154(3.91) - .148(3.74)

GP1U0

Abstract: TD-220AB 22 1006 GP10 GP1001 GP1007 04V0
Contextual Info: TAIWAN SEMICONDUCTOR iS GP1001 -GP1007 10.0 AMPS. Glass Passivated Rectifiers RoHS T.Q.-22QAB C O M P L IA N C E irtr.4 ?:I Twnii •i.'l!W.' .lil!»; Features <> • i' 4 - <> ■ i' ■<r G la ss p a s s iv a ts d chi p ju n o tio n . H ig h e ffic ie n c y . Lo w V F

1C010

Abstract: ci 94vo 1D04C DA1C 1002G HERF1001G HERF1008G 1D07 PABI MARKING 1D07G
Contextual Info: s HERF1001G - HERF1008G TAIWAN SEMICONDUCTOR Isolated 10.0 AM PS. Glass Passivated High Efficient Rectifiers ITO-22DAB RoHS COMPLIANCE Features <• Glass pEssiveted ch ip ju nction. <• ■ir High currant capability High reliability h igh su ipc currcn t capa bill ly

Contextual Info: NM 24C03/C05/C09/C17 2K -/4K -/8K -/16K -B it Serial EEPROM with Write Protect l2C Synchronous 2-Wire Bus General Description Features The NM24C03/C05/C09/C17 devices are 2048/4096/ 8192/16,834 bits, respectively, of CMOS non-volatile elec­ trically erasable memory. These devices conform to all

TSM6963SDCA

Contextual Info: TSM6963SD 20V Dual P-Channel MOSFET TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 PRODUCT SUMMARY VDS V RDS(on)(mΩ) -20 ID (A) 30 @ VGS = -4.5V -4.5 42 @ VGS = -2.5V -3 68 @ VGS = -1.8V

Contextual Info: Fusing Equipment Electrical Apparatus 240-98 ELSP Current-Limiting Backup Fuse GENERAL Eaton’s Cooper Power Systems ELSP Current-limiting Backup Fuse is used in series with low current primary protection devices such as a Bay-O-Net Fuse or MagneX Interrupter.

MARKING code RAf

Abstract: marking CODE 1BS 1003G 1004G 1006G FRAF1001G FRAF1007G 1C02G
Contextual Info: FRAF1001G - FRAF1007G TAIWAN % SEMICONDUCTOR Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers ITO-220AC tò RoHS COM PLIANCE .4^ 1 Î0 - •¿¡MUHit I .iis;s.»i iiiijxsn: .1M0.4IDI* . '■ « f S t 'iB I * / □P Features <' <• <• <• <■

24C03

Abstract: 24c05 M24C09
Contextual Info: NM24C03/C05/C09/C17 EH National Semiconductor N M 24C 03/C 05/C 09/C 17 2 K -/4 K -/8 K -/16K-Bit SeriaJ EEPROM with Write Protect l2C Synchronous 2-Wire Bus General Description Features The N M 24C03/C05/C09/C17 devices are 2048/4096/ 8192/16,834 bits, respectively, of CMOS non-volatile elec­

10C2G

Abstract: URM 95 HERAF1001G WCJJ
Contextual Info: s ' TAIWAN SEMICONDUCTOR RoHS HERAF1001G - HERAF1008G Isolated 10.0 AMPS. Glass Passivated High Efficient Rectifiers COMPLIANCE U Q £ 2QAG 4 .H e f . . | • _.ix uc.s:_ ■* ' »«.¿I i«: .um.oy, .U X .Z .x , iii'i.o;oiy .O ï.i.iii •î.-i:ao> .S K ifn .K ;.

Contextual Info: A88 5E88) %74874900":A0<0%?;7C ,C5B0?>697EB12<50C,0C9J5 BF F "'010"+0"!)$ 90B>02090<,>4:90;:A0<0=:7?>4:9 &'$%010!"&! %0 & , =

C 6492-0

Contextual Info: B99 6D99) 0/4.,77C0;<:@0/ '7><,0:A0 :4=00":A0<0%?;7C ,<DB18897805669395>3I0C,0C9J5 48D98E "'020"+0"!)$ &300* 01,847C0:1080/4.,77C0,;<:@0/0'7><,0:A0 :4=00;:A0<0=?;740=0;<:@4/0=0?; >:0 D99)0 490 ,90 0B><0807C0 .:8;,.>0 A'0 ;,.6,2070 "<:@4/4920 ?;0 >:0 0 4=:7,>0/0 

tc-2b 94v-0

Abstract: pure sine wave inverter TC25SC mbrf 100 ct 125CC LF-H 14 S marking code ES3 UUU1 20H2 MBRF20H100CT
Contextual Info: % TAIW AN SEM ICONDUCTO R RoHS MBRF20H100CT - MBRF20H200CT Isolated 20.0 AMPS. Schottky Barrier Rectifiers ITO-220AB 105!H7: COMPLIANCE •A M iwixu: .1- 212.051 .ic cß .ss: VMX .Z !Z \% V . n Features “ ^ •?' ■i> •> ■t' ■t' •> ■y- P lastic mate ri al used ca rries U nde rwrite rs Labo ratory

1002C

Abstract: 1003G FRF1001G FRF1007G
Contextual Info: % FRF1001G - FRF1007G TAIWAN SEMICONDUCTOR Isolated 10 AMPS. Glass Passivated Fast Recovery Rectifiers ITO-220AB tò RoHS C O M P L IA N C E TI y.'.x /2 4 ii lbl_ im « .KOiZTK Features •<f <<r <f ❖ G lass. p a 6 6 iv a ie d c h ip ju n c tio n . H ig h e ffic ie n c y , L a v ; V F

TB222

Abstract: PH smd transistor PH
Contextual Info: August 7, 2012 TB222A Frequency=1-1000MHz Pout=25W Gain=11dB Vds=48Vdc Idq=0.15A Efficiency=30 to 70% GX141 PH: 805 484-4210 FAX:(805)484-3393 1110 Avenida Acaso, Camarillo CA 93012 www.polyfet.com B T 2A A ugst7,201 Gain/Eff vs Fre q: Vds =48V, Idq=0.15A, Pout=20W

6A SCHOTTKY BARRIER RECTIFIERS

Abstract: 10H150C marking code mow MBRF10H100CT MBRF10H200CT 10H150CT
Contextual Info: TAIWAN MBRF10H10QCT - MBRF10H200CT S SEMICONDUCTOR Isolated 10.0 AMPS. Schottky Barrier Rectifiers ITO 220AB RoHS COMPLIANCE 12-0«3 Features •S' Plastic nrnteric I used w r f k s Underwriter* Le fccrelory Mir- V C li s iif ic o l o n s i> 4V-0 •> *

BZT55C2V0

Abstract: MELF DIODE color bands blue MELF ZENER DIODE color bands blue BZT55C2V2 BZT55C2V4 BZT55C2V7 BZT55C3V0 BZT55C3V3 BZT55C3V6 BZT55C3V9
Contextual Info: BZT55C2V0 - BZT55C75 Pb RoHS COMPLIANCE 0.5 Watts Hermetically Sealed Glass Zener Voltage Regulators QUADRO MINI-MELF Features — — — — — — — — — Zener voltage range 2.0 to 75 volts Mini-MELF package Surface device type mounting Hermetically sealed glass