100 PSM Search Results

AN11130

Abstract: Micro-coax UT UT-062C-18 LR12010T0200J RL7520WT-R005-f Micro-coax UT-062C-18 RL7520WT-R005 Z5 1512 1001G00
Contextual Info: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 2 — 29 January 2013 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation

30221

Abstract: LR12010T0200J
Contextual Info: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 1 — 15 June 2012 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation

Contextual Info: CLF1G0035-100; CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 3 — 26 September 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035-100 and CLF1G0035S-100 are broadband general purpose 100 W amplifiers with first generation GaN HEMT technology from NXP. Frequency of operation

Contextual Info: DO - 8 PSM/PSMR 100K IF AV = 100 A PSMF/PSMFR 100K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800

PSMN009-100W

Abstract: k 30 transistor
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES PSMN009-100W SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 100 A

Contextual Info: DO - 9 PSM/PSMR 300K IF AV = 300 A PSMF/PSMFR 300K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800

min30at

Abstract: MIN30A-T
Contextual Info: DO - 8 PSM/PSMR 200K IF AV = 200 A PSMF/PSMFR 200K VRRM = 100 - 1000 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 (V) 100 200 400 600 800 1000 (V) 40

Contextual Info: DO - 9 PSM/PSMR 250K IF AV = 250 A PSMF/PSMFR 250K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800

100 psm

Contextual Info: DO - 9 PSM/PSMR 320K IF AV = 320 A PSMF/PSMFR 320K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800

Contextual Info: DO - 8 PSM/PSMR 150K IF AV = 150 A PSMF/PSMFR 150K VRRM = 100 - 1600 V Silicon Power Diode Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800

I1228

Contextual Info: CLF1G0035-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Product data sheet 1. Product profile 1.1 General description CLF1G0035-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.

Contextual Info: CLF1G0035S-100 Broadband RF power GaN HEMT Rev. 4 — 6 November 2014 Objective data sheet 1. Product profile 1.1 General description CLF1G0035S-100 is a broadband general purpose 100 W amplifier with first generation GaN HEMT technology from NXP. Frequency of operation is from DC to 3.5 GHz.

Contextual Info: ¥ 4 % — K/Diodes 1SR156-100/1SR156-200/1SR156-400 1SRI 56-100/1SR156-200/ 1SR156-400 HU^^O (Under Development > y n i - k Silicon Diffused Junction High-Speed Rectifying Diodes • 1) &l33/Dimensions (U nit: mm) (P S M )o 2) • Features 1) Small surface mount type (PSM).

psm 125

Abstract: 6008-K
Contextual Info: DO - 5 PSM/PSMR 60L PSM/PSMR 60K Silicon Power Diode IF AV = 60 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000

612L

Contextual Info: DO - 4 PSM/PSMR 6 Silicon Power Diode IF AV = 6A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600 (V)

Contextual Info: DO - 4 PSM/PSMR 12 Silicon Power Diode IF AV = 12 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600

psm 125

Abstract: psmr
Contextual Info: DO - 5 PSM/PSMR 70L PSM/PSMR 70K Silicon Power Diode IF AV = 70 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000

"psm"

Abstract: 4014L psmr
Contextual Info: DO - 5 PSM/PSMR 40L PSM/PSMR 40K Silicon Power Diode IF AV = 40 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000

1606l

Contextual Info: DO - 4 PSM/PSMR 16 Silicon Power Diode IF AV = 16 A VRRM = 100 - 1600 V Preliminary Data Sheet V RRM max.repetitive peak voltage V R(RMS) VR recommended RMS working voltage (V) 70 140 280 420 560 700 840 980 1120 (V) 100 200 400 600 800 1000 1200 1400 1600

Contextual Info: PSM-4E Series_ p h a s e s h i f t e r s , m a n u a l 10 to 100 MHz / O' to 180' Continuous Plus 180' Switch / 10% Bandwidth / SMA Connectors PRINCIPAL SPECIFICATIONS Model Number PSM-4E-*B Center Phase Frequency, Shift fP, MHz_ Range at f0 10 to 100

STI5516

Abstract: sti5100 pinout STI5100 IPTV schematic diagram JTAG STi5516 IPTV schematic JTAG STi5514 sti5514 bsdl schematic diagram receiver satellite TAG 8430
Contextual Info: 78Q8430 10/100 Ethernet MAC and PHY Simplifying System Integration TM DATA SHEET March 2009 DESCRIPTION FEATURES The Teridian 78Q8430 is a 10/100 Fast Ethernet controller supporting multi-media offload. The device is optimized for host processor offloading

1N4148 SMD LL-34

Abstract: Diode smd 82T SMD 82T LTZ-MR15 SC-40 DO-34 ZENER da226u 1N4606 1N4148 LL-41 1SR35-100
Contextual Info: : t — K /D io d e s T .'f " j f - > • ? '£ '< i [ — K /S w itc h in g Diodes • ¡ S S É /t^ 'i *j 3 - 's * ? $ Part No. Cond. Package Page V r V V f (V) Max. I f (mA) 1SS353 80 1.2 100 USM 34 1SS354 50 1.2 100 USM 34 1SS355 35 1.2 100 USM 34 RLS-71

TRIPATH TA2021

Abstract: TA0102A TA2021 TA0103A TRIPATH TYPE VP2 RELAY Tripath Amplifier TA2021-100 VN10 100 100w stereo amplifier
Contextual Info: TECHNICAL INFORMATION Stereo 100W 4Ω Ω Class-T Digital Audio Amplifier Driver TM using DPP Technology (Tornado) TA2021-100 CONFIDENTIAL INFORMATION – July 1999 General Description The TA2021-100 Tornado is a 100W (4Ω), two channel Amplifier Driver IC which uses

MT9075BP1

Abstract: MT9075BL1 MT9075BP 24 seconds counter MO-112 MT9075B MT9075BL MT9075BPR PCM30
Contextual Info: MT9075B E1 Single Chip Transceiver Data Sheet Features • August 2005 Combined PCM 30 framer, Line Interface Unit LIU and link controllers in a 68 pin PLCC or 100 pin MQFP package Ordering Information MT9075BPR 68 Pin PLCC MT9075BL 100 Pin MQFP MT9075BP