100 OHM REGISTER Search Results

Contextual Info: Detailed Specifications & Technical Data METRIC MEASUREMENT VERSION 89207 Twinax - Electronic Twinax - 100 Ohm For more Information please call 1-800-Belden1 Description: 100 Ohm twinaxial cable, 20AWG stranded 7x28 one tinned, one bare copper conductor, FEP insulation,

Contextual Info: 3644 Series, Round, 100-Ohm, Discrete, Twisted Pair Cable 3M 3644 Series cable is an excellent choice for digital communications applications requiring 100-Ohm impedance. It combines all the features that make for superior performance and easier handling in applications.

Contextual Info: ISO-9001 Registered TELECOMMUNICATIONS LINE FEED RESISTORS ALFR-2 SERIES LFR-2 SERIES • • • • • • Meets all test and specifications of TR-1089 & UL-1459 • 5.1 ohm to 100 ohm range • 1% tolerance • Meets GR-1089 lightning surge • Meets GR-1089 power cross

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened

to-254aa

Contextual Info: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened

Contextual Info: Constant Voltage Transformer XT9170-CS NetStreams Constant Voltage Transformer converts an 8 Ohm audio signal into a 70 or 100 volts. When paired with a SpeakerLinX Professional Amplifier or other amplifier, the XT9170-CS will allow DigiLinX to use 70 or 100 volt speakers in commercial audio

UNITRONIC

Abstract: VDE 0472
Contextual Info: UNITRONIC BUS FD P IBS For highly flexible application in power chains and frequently moved machine parts. INTERBUS 100 Ohm Note IBS Cable for highly flexible application remote bus cable + installation remote bus cable INTERBUS is a registered trademark of Phoenix Contact

940 629 MOTOROLA 220

Contextual Info: MOTOROLA Order this document by CA2830C/D SEMICONDUCTOR TECHNICAL DATA Wideband Linear Amplifiers CA2830C . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain

suconet

Abstract: MOELLER DIN 47100 suconet 40 din 0472 814
Contextual Info: UNITRONIC BUS LD Industrial Communication, Fieldbus in the Process Level Impedance 100-120 Ohm Note Bus cables for bus systems as e.g. for SUCOnet P, Modulink P, VariNet-P . SUCOnet P = registered trademark of Moeller-Group Modulink P = registered trademark of Weidmüller GmbH & Co

714F

Abstract: CA2832C
Contextual Info: MOTOROLA Order this document by CA2832C/D SEMICONDUCTOR TECHNICAL DATA The RF Line Wideband Linear Amplifier CA2832C . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain

CA5815C

Abstract: CA5815CS ansi y14.5m-1982 MOTOROLA wideband hybrid CA5815 motorola 239 MOTOROLA wideband hybrid amplifiers 714P DSO bandwidth motorola rf device data book
Contextual Info: MOTOROLA Order this document by CA5815C/D SEMICONDUCTOR TECHNICAL DATA CA5815C CA5815CS The RF Line Wideband Linear Amplifiers . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain

714F

Abstract: CA2830C MOTOROLA wideband hybrid amplifiers
Contextual Info: MOTOROLA Order this document by CA2830C/D SEMICONDUCTOR TECHNICAL DATA The RF Line Wideband Linear Amplifiers CA2830C . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain

940 629 MOTOROLA 220

Contextual Info: MOTOROLA Order this document by CA2830C/D SEMICONDUCTOR TECHNICAL DATA The RF Line CA2830C CA2833C Wideband Linear Amplifiers . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain

AN569

Abstract: MTD10N10EL SMD310
Contextual Info: MOTOROLA Order this document by MTD10N10EL/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD10N10EL Motorola Preferred Device TMOS POWER FET 10 AMPERES 100 VOLTS RDS on = 0.22 OHM

MTD5N10

Abstract: MTD6N10E AN569 SMD310 SOT 23 MOSFET
Contextual Info: MOTOROLA Order this document by MTD6N10E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD6N10E Motorola Preferred Device TMOS POWER FET 6.0 AMPERES 100 VOLTS RDS on = 0.400 OHM

714f

Abstract: CA2832C
Contextual Info: MOTOROLA Order this document by CA2832C/D SEMICONDUCTOR TECHNICAL DATA The RF Line Wideband Linear Amplifier CA2832C . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain

CA2842C

Abstract: 714F
Contextual Info: MOTOROLA Order this document by CA2842C/D SEMICONDUCTOR TECHNICAL DATA The RF Line Wideband Linear Amplifier CA2842C . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent gain

CA5800CS

Abstract: 714P CA5800C MOTOROLA wideband hybrid amplifiers MOTOROLA wideband hybrid
Contextual Info: MOTOROLA Order this document by CA5800C/D SEMICONDUCTOR TECHNICAL DATA The RF Line CA5800C CA5800CS Wideband Linear Amplifiers . . . designed for amplifier applications in 50 to 100 ohm systems requiring wide bandwidth, low noise and low distortion. This hybrid provides excellent