100 N 37 Search Results

Contextual Info: mirawirelektronik ZZ3 Sta n d a rd extruded heatsinks art. no. SK 406 . please indicate: N 37.5 50 75 100 1000 mm art. no. SK 100 . please indicate: M 37.5 50 75 100 150 1000 mm art. no. SK 506 . please indicate: N ^ 37.5 50 75 100 1000 mm optional

Contextual Info: LT3504 Quad 40V/1A Step-Down Switching Regulator with 100% Duty Cycle Operation DESCRIPTION FEATURES n n n n n n n n n n n n n Wide Input Range: 3.2V to 40V Four 1A Outputs 100% Duty Cycle Operation Resistor-Programmed Constant Frequency Short-Circuit Robust

L04A

Abstract: l77a l0db marking L04A marking L03A l0db 8 pin LP2981 MA05A l05a L0DA
Contextual Info: LP2981 Micropower SOT, 100 mA Ultra Low-Dropout Regulator General Description Features The LP2981 is a 100 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. n n n n n n n n n n n n Using an optimized VIP Vertically Integrated PNP process, the LP2981 delivers unequaled performance in all

l04b SMD

Abstract: l04a SMD L77A l03b SMD L0DB SMD L0CA l03a smd l0da
Contextual Info: LP2981 Micropower SOT, 100 mA Ultra Low-Dropout Regulator General Description Features The LP2981 is a 100 mA, fixed-output voltage regulator designed specifically to meet the requirements of battery-powered applications. n n n n n n n n n n n n Using an optimized VIP Vertically Integrated PNP process, the LP2981 delivers unequaled performance in all

Contextual Info: LP2981-N www.ti.com SNOS773J – MAY 2004 – REVISED JANUARY 2009 LP2981-N Micropower 100 mA Ultra Low-Dropout Regulator in SOT-23 Package Check for Samples: LP2981-N FEATURES DESCRIPTION • • • • • • • • • • • The LP2981-N is a 100 mA, fixed-output voltage

RT-8200

Abstract: AD844 EL2020 HA5004 LM6181 LM6181IN LT1223 OP160 1132b1 LM6181 out pin
Contextual Info: LM6181 N a t i o n a l S e m i c o n d u c t o r t * LM6181 100 mA, 100 MHz Current Feedback Amplifier General Description Features The LM6181 current-feedback amplifier offers an unparal­ leled combination of bandwidth, slew-rate, and output cur­ rent. The amplifier can directly drive up to 100 pF capacitive

SMCC-102J

Abstract: smcc SMCC-120K SMCC-R10M SMCC-122J-oo SMCC-101J SMCC103 100 uH
Contextual Info: Leaded RF Inductors Series SMall Choke Coil SMCC SMCC/N 9.5 0.6 4 min 12.5* * Minimum Pitch 64 UL 10000 1000 Q 1 mH 100 µH 10 µH 100 10000 1000 µH 1000 10 mH 1000 1000 µH L 100 µH 10 100 µH 100 µH L 100 (µH) 10 1 µH 1 0.1 0.01 0.1 1 10 0.1 0.01

Contextual Info: LTC4101 Smart Battery Charger Controller DESCRIPTION FEATURES n n n n n n n n n n n n n n n Single Chip Smart Battery Charger Controller 100% Compliant Rev. 1.1 SMBus Support Allows for Operation with or without Host Up to 4A Charging Current Capability

82562ET

Abstract: 82562EZ 82562G
Contextual Info: Intel 82562V 10/100 Mbps Platform LAN Connect Datasheet Product Features n n n n n n n n n IEEE 802.3 10BASE-T/100BASE-TX compliant physical layer interface IEEE 802.3u Auto-Negotiation support Digital Adaptive Equalization control Link status interrupt capability

l04a

Abstract: 7144 transistor equivalent L03A c5ff diode 4937 LP2981IMS-5.0 LP2981 MA05A MARKING JS sot-23 l05a sot 23
Contextual Info: LP2981 N a t i o n a l S e m i c o n d u c t o r LP2981 Micropower SOT, 100 mA Ultra Low-Dropout Regulator General Description Features The LP2981 is a 100 mA, fixed-output voltage regulator de­ signed specifically to meet the requirements of battery-pow­

HA25

Abstract: HVX40 HVX5 HA20 HA10 HVX30 HA15 HVX10 HVX15 HVX20
Contextual Info: HIGH VOLTAGE SILICON RECTIFIERS HA10-100 HVX10-100 100-250m A Fast Recovery, M iniature D E SCR IPTIO N The H V X /H A silico n re c tifie r series com bine a m edium re ctified c u rren t ca p a b ility and high re lia b ility in a m inia tu re package fo r

6414a

Contextual Info: NTD6414AN, NVD6414AN N-Channel Power MOSFET 100 V, 32 A, 37 mW Features Low RDS on High Current Capability 100% Avalanche Tested AEC Q101 Qualified − NVD6414AN These Devices are Pb−Free and are RoHS Compliant http://onsemi.com MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

PLL 2400 MHZ

Contextual Info: 100 MHz to 2400 MHz I/Q Modulator with Integrated Fractional-N PLL and VCO ADRF6755 Data Sheet FEATURES GENERAL DESCRIPTION I/Q modulator with integrated fractional-N PLL and VCO Gain control span: 47 dB in 1 dB steps Output frequency range: 100 MHz to 2400 MHz

Thomson capacitors lcc

Abstract: thomson Metallized Polyester Film Capacitor Thomson-CSF LCC capacitors LCC capacitors BF 250v 104 K capacitor Thomson capacitors bf thomson-csf tantalum capacitors Thomson lcc film capacitors diode 10000v Thomson-CSF tantalum
Contextual Info: FILM AND TANTALUM CAPACITORS SELECTION GUIDE Capacitance % ∆ + 15 + 10 +5 Metallized polyester film capacitors BH BO BT/BC BK CPM-N CPM-N CPM 50 CPM 85 CPM 85 Chip General Use High Temperature High Temperature 55 / 100 / 56 55 / 100 / 56 55 / 125 / 56 55 / 125 / 56

transistor NEC D 882 p

Abstract: nec d 882 p datasheet nec d 882 p nec d 882 p transistor transistor NEC D 587 IMT-2000 NES1823P-100 615t 2C156
Contextual Info: PRELIMINARY DATA SHEET N-CHANNEL GaAs MESFET NES1823P-100 100W L-BAND PUSH-PULL POWER GaAs MESFET DESCRIPTION The NES1823P-100 is a 100 W push-pull type GaAs MESFET designed for high power transmitter applications for IMT-2000 and PCS/PCN base station systems. It is capable of delivering 100 watts of output power with high linear

Contextual Info: PRELIMINARY PDM34088 3.3V 64K x 32 Fast CMOS Synchronous Static RAM with Burst Counter and Output Register Features n n n n n n n n n n n n n n n n Interfaces directly with the x86, Pentium , 680X0 and PowerPC™ processors 100, 80, 66, 60, 50 MHz Single 3.3V power supply

Contextual Info: .050" x .100" Tripolarized, Latch/Ejector Header Straight, 4 Wall, Surface Mount 810 Series • Tripolarization to mini socket • • • • 50 m il x 100 m il double board density N ine sizes 2 0-100 position Latch and eject feature H igh tem perature dielectric

STW45NM50

Contextual Info: STW45NM50 N-CHANNEL 500V - 0.08Ω - 45A TO-247 MDmesh Power MOSFET TYPE STW45NM50 n n n n n n VDSS RDS on ID 500V < 0.1Ω 45 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

STE48NM50

Contextual Info: STE48NM50 N-CHANNEL 500V - 0.08Ω - 48A ISOTOP MDmesh Power MOSFET TYPE STE48NM50 n n n n n n VDSS RDS on ID 500V < 0.1Ω 48 A TYPICAL RDS(on) = 0.08Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE

LTC1206CN8

Abstract: LTC1206 74C906 LT1206 LT1206CR LT1206CS8 LT1206CT7
Contextual Info: LT1206 250mA/60MHz Current Feedback Amplifier Features n n n n n n n n n n n Description 250mA Minimum Output Drive Current 60MHz Bandwidth, AV = 2, RL = 100Ω 900V/µs Slew Rate, AV = 2, RL = 50Ω 0.02% Differential Gain, AV = 2, RL = 30Ω 0.17° Differential Phase, AV = 2, RL = 30Ω

Contextual Info: DS91C176,DS91 D176 DS91D176/DS91C176 100 MHz Single Channel M-LVDS Transceivers Texa s In s t r u m e n t s Literature Number: SNLS146K DS91D176/DS91C176 Q w Semiconductor 100 MHz Single Channel M-LVDS Transceivers General Description The DS91C176 and DS91 D176 are 100 MHz single channel

Contextual Info: SUM110N10-09 Vishay Siliconix N-Channel 100 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested D TO-263 G G

SUM110N10-09

Abstract: SUM110N10-09-E3
Contextual Info: SUM110N10-09 Vishay Siliconix New Product N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) ID (A) 100 0.0095 at VGS = 10 V 110a • TrenchFET Power MOSFET • New Package with Low Thermal Resistance • 100 % Rg Tested

SUM40N10-30

Abstract: SUM40N10-30-E3 11-Feb-08
Contextual Info: SUM40N10-30 Vishay Siliconix N-Channel 100-V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 100 rDS(on) (Ω) ID (A) 0.030 at VGS = 10 V 40 0.034 at VGS = 6 V 37.5 • TrenchFET Power MOSFETS • 175 °C Junction Temperature • Low Thermal Resistance Package