100 AMP CURRENT 800 VOLT DIODE Search Results
100 AMP CURRENT 800 VOLT DIODE Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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MGN1D120603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-6/-3V GAN | |||
MGN1D050603MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-6/-3V GAN | |||
MGN1S0512MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 5-12V GAN | |||
MGN1S1212MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-12V GAN | |||
MGN1S1208MC-R7 | Murata Manufacturing Co Ltd | DC-DC 1W SM 12-8V GAN |
100 AMP CURRENT 800 VOLT DIODE Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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RP102G
Abstract: RP100G RP101G RP104G RP106G RP108G RP110G 102B2
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FSDP-102-A2 DO-41, MIL-STD-202, 50/100ns/cm RP102G RP100G RP101G RP104G RP106G RP108G RP110G 102B2 | |
A30QS400-4
Abstract: A30QS604 A30QS800-4 300 volt 5 ampere transistor 4500a A30QS125-4 A30QS7 A30QS600 datasheet of blown fuse indicator 250 volt to 600 volt fuse
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A30QS A30QS A30QS400-4 A30QS604 A30QS800-4 300 volt 5 ampere transistor 4500a A30QS125-4 A30QS7 A30QS600 datasheet of blown fuse indicator 250 volt to 600 volt fuse | |
IGBT 50 amp 1000 volt
Abstract: schematic induction heating OM6555SP1 OM6555SP2 OM6556SP1 OM6556SP2 200 Amp current 1000 volt diode
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OM6555SP1 OM6556SP1 OM6555SP2 OM6556SP2 DC340 IGBT 50 amp 1000 volt schematic induction heating OM6556SP1 OM6556SP2 200 Amp current 1000 volt diode | |
iN4007G
Abstract: IN4004G IN4003G IN4005G IN4006G IN4001G IN4003 1N4002G
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GG00137 GPPD-100-A DO-41, MIL-STD-202, 30QuS iN4007G IN4004G IN4003G IN4005G IN4006G IN4001G IN4003 1N4002G | |
TH-Q1210-B
Abstract: THOMSON-CSF Power Laser diode power amp 1000w
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TH-Q1210-B TH-Q1310-B TH-Q1410-B TH-Q1X10-B TH-Q1410-B THOMSON-CSF Power Laser diode power amp 1000w | |
Contextual Info: TH-Q12xx-C / TH-Q13xx-C 300W to 1.5kW QUASI-CW STACKED ARRAYS DESCRIPTION The TH-Q12xx-C and TH-Q13xx-C series are high optical power laser diodes stacks assembled on a liquid cooled heatsink. These stacks are based upon highly efficient 1cm linear bar arrays. According to the number |
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TH-Q12xx-C TH-Q13xx-C TH-Q13xx-C | |
IGBT 400 amp
Abstract: 150 VOLT 10 AMP IGBT circuit 50 Amp 300 volt diode 2MBI100N-060 250 Amp current 1500 volt diode P607 2mbi75n collmer igbt
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1MBI400NB-060 1MBI600NN-060 1MBI600NP-060 7MBR30NF060 7MBR50NF060 IGBT 400 amp 150 VOLT 10 AMP IGBT circuit 50 Amp 300 volt diode 2MBI100N-060 250 Amp current 1500 volt diode P607 2mbi75n collmer igbt | |
industrial induction heat circuitContextual Info: OM6537SP1/SP2 OM6539SP1/SP2 OM6541SP1/SP2 OM6538SP1/SP2 OM6540SP1/SP2 OM6542SP1/SP2 500 Volt And 1000 Volt, 5 To 25 Amp, N-Channel IGBTs With Uncommitted Ultra Fast Diodes In Multi-Chip Packages FEATURES APPLICATIONS • • • • • • • • One Or Two Circuits Per Package |
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OM6537SP1/SP2 OM6539SP1/SP2 OM6541SP1/SP2 OM6538SP1/SP2 OM6540SP1/SP2 OM6542SP1/SP2 OM65xx DC340 industrial induction heat circuit | |
3TF44
Abstract: 3TF52 3tf42 3TF46 3TF4222 3TF4422 simoreg 6ra24 3TF4222-0A 3TF4822 3TF5222-0AK6
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A1-116-110-503 A1-116-110-504 A1-116-110-505 A1-116-110-506 A1-116-110-508 A1-116-110-509 A1-116-110-511 A1-116-110-513 6RA2413-1FS22 6RA2418-1FS22 3TF44 3TF52 3tf42 3TF46 3TF4222 3TF4422 simoreg 6ra24 3TF4222-0A 3TF4822 3TF5222-0AK6 | |
BI400NContextual Info: • 22307^2 OOOB^E: bö? ■ THIRD GENERATION IGBT § 1200 VOLT, N-SERIES SINGLE MODULES • 200 - 600 Amp Device Pc VcE(sat PeriGST Max. lc ton toff Volts Amps Watts Volts Amps usee. usee. 1200 1200 1200 1200 1200 1200 1200 1200 200 300 300 300 400 400 |
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1MBI200N-120 1MBI300N-120 1MBI300NN-120 BI300NP-120 1MBI400N-120 1MBI400NN-120 BI400NP-120 1MBI600P-120 7MBR10NF120 7MBR15NF120 BI400N | |
diode cross reference
Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
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KBPC25Contextual Info: Data Sheet 10 to 40 Amp SINGLE PHASE SILICON BRIDGE Semiconductor Features • BUILT-IN IN TEG RA L HEAT SIN K ■ UP TO 400 AMP SURGE OVERLOAD RATING ■ U L RECO GN ITIO N A VA ILA BLE ■ OPTION O F W IRE LEA D S OR FASTON TERM IN ALS E le c tric a l C h a ra c te ristic s @ 25*C . |
OCR Scan |
KBPC10 KBPC15 KBPC25 KBPC35 KBPC40 KBPC25 | |
7MB150N-120
Abstract: 7MB140N-120 IGBT 400 amp IGBT 50 amp 1200 volt p607 150 VOLT 12 AMP diode 7MBR15NF120 7mbr25nf120 2MBI75N-120 7MBR10NF120
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1MBI200N-120 NI127 1MBI300N-120 1MBI300NN-120 1MBI300NP-120 1MBI400N-120 M127mps 7MBI40N-120 7MBI50N-120 7MBR10NF120 7MB150N-120 7MB140N-120 IGBT 400 amp IGBT 50 amp 1200 volt p607 150 VOLT 12 AMP diode 7MBR15NF120 7mbr25nf120 2MBI75N-120 | |
2MB150N-060
Abstract: 2mb175n-060 2mb1300n-060 2mb1200n-060 P607 IGBT 400 amp 150 VOLT 10 AMP IGBT circuit 2mb175n 2mb1150 2mb1200n 120
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OCR Scan |
1MBI400NB-060 1MBI600NN-060 1MBI600NP-060 7MBI75N-060 7MBI100N-060 7MBR30NF060 7MBR50NF060 2MB150N-060 2mb175n-060 2mb1300n-060 2mb1200n-060 P607 IGBT 400 amp 150 VOLT 10 AMP IGBT circuit 2mb175n 2mb1150 2mb1200n 120 | |
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MU310
Abstract: MU39 MU37 MU38 1000 v fast recovery rectifier diodes
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MU310 MU310 MU37-3 MU39 MU37 MU38 1000 v fast recovery rectifier diodes | |
MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
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SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N | |
TPFD-7501-1A
Abstract: TVS7524PFA TVS7524PFC
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TPFD-7501-1A TVS7524PFC TVS7524PFA tvs7524pf TPFD-7501-1A TVS7524PFA TVS7524PFC | |
10URD73TTF1000
Abstract: ferraz A130 URD 73 URD 44 URD 44 TTF URD 73 TTF ferraz a110 A130URD73TTI0630 B300726 100 amp 1000 volt GTO 11URD71TTF0500
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1250/1300V 10URD73TTF1000 ferraz A130 URD 73 URD 44 URD 44 TTF URD 73 TTF ferraz a110 A130URD73TTI0630 B300726 100 amp 1000 volt GTO 11URD71TTF0500 | |
NTE5810
Abstract: NTE5811 NTE5870 NTE5891 NTE587
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NTE5810 NTE5811, NTE5870 NTE5891 NTE5810, NTE5891 NTE5810 NTE5811 NTE587 | |
ferraz 6.9 URD 33 TTF 1400
Abstract: URD 30 TTF 6,6 URD 233 TTF 1600 E300269 ferraz 6.9 URD 33 TTF 1250 6,6 URD 33 TTF 1000 6URD33TTF1600 A070URD33LI0800 X300216 A065URD33TTI1800
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690/700V ferraz 6.9 URD 33 TTF 1400 URD 30 TTF 6,6 URD 233 TTF 1600 E300269 ferraz 6.9 URD 33 TTF 1250 6,6 URD 33 TTF 1000 6URD33TTF1600 A070URD33LI0800 X300216 A065URD33TTI1800 | |
NTE5869
Abstract: NTE5850 transistor c 5855
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NTE5850 NTE5869 NTE5869 transistor c 5855 | |
NTE5911
Abstract: "Power rectifier Diode" 435a2s 10 AMP 1000V RECTIFIER DIODE NTE5892 NTE5899 NTE5900
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NTE5892 NTE5899 NTE5900 NTE5911 NTE5911 "Power rectifier Diode" 435a2s 10 AMP 1000V RECTIFIER DIODE NTE5899 | |
493a2s
Abstract: NTE5844 NTE584 10 AMP 1200V RECTIFIER DIODE NTE5845 NTE5912 NTE5933 NF-2A
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NTE5844 NTE5845, NTE5912 NTE5933 NTE5844, NTE5933 493a2s NTE5844 NTE584 10 AMP 1200V RECTIFIER DIODE NTE5845 NF-2A | |
Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics: |
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NTE5906, NTE5907, NTE5980 NTE6005 |