100 AMP CURRENT 800 VOLT DIODE Search Results

RP102G

Abstract: RP100G RP101G RP104G RP106G RP108G RP110G 102B2
Contextual Info: DI OT EC E L E C T R O N I C S CORP SfiE V DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 EflMTlO? GGOGIST ^bl « » I X Data Sheet No.: FSDP-102-A2 ' - n 0 3 -1 3 1 AMP FAST RECOVERY SOFT GLASS-PASSIVATED DIODES

A30QS400-4

Abstract: A30QS604 A30QS800-4 300 volt 5 ampere transistor 4500a A30QS125-4 A30QS7 A30QS600 datasheet of blown fuse indicator 250 volt to 600 volt fuse
Contextual Info: AMP-TRAP –Form 101 A30QS SEMICONDUCTOR PROTECTION FUSES A30QS Amp-Trap® Semiconductor Protection fuses are intended for the protection of Power Semiconductors such as Diodes, Phase Control SCR’s and other Power Semiconductor devices. The A30QS is recommended for

IGBT 50 amp 1000 volt

Abstract: schematic induction heating OM6555SP1 OM6555SP2 OM6556SP1 OM6556SP2 200 Amp current 1000 volt diode
Contextual Info: OM6555SP1 OM6556SP1 OM6555SP2 OM6556SP2 1000 Volt, 5 To 25 Amp, N-Channel IGBTs With Free Wheeling Diodes In Multi-Chip Packages FEATURES APPLICATIONS • • • • • • • • • Two Or Four IGBTs And Free Wheeling Diodes 2500V Package Isolation Low Turn-Off Switching Losses

iN4007G

Abstract: IN4004G IN4003G IN4005G IN4006G IN4001G IN4003 1N4002G
Contextual Info: DIOTEC ELECTRONICS CORP n u T P i . u SfiE ] • 204^107 GGGG137 ETO M P I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310)767-1052 Fax:(310) 767-7958 Data Sheet No.: GPPD-100-A <-t- oj i _ . o »•v 1 AMP SOFT GLASS-PASSIVATED SILICON DIODES

TH-Q1210-B

Abstract: THOMSON-CSF Power Laser diode power amp 1000w
Contextual Info: TH-Q1210-B / TH-Q1310-B / TH-Q1410-B 600W / 800W / 1000W QUASI-CW STACKED ARRAYS DESCRIPTION TH-Q1X10-B are high optical power laser diode sources. These Products are based upon 10 highly efficient 1cm linear bar arrays which are piled up to form a stack operating in Quasi-CW

Contextual Info: TH-Q12xx-C / TH-Q13xx-C 300W to 1.5kW QUASI-CW STACKED ARRAYS DESCRIPTION The TH-Q12xx-C and TH-Q13xx-C series are high optical power laser diodes stacks assembled on a liquid cooled heatsink. These stacks are based upon highly efficient 1cm linear bar arrays. According to the number

IGBT 400 amp

Abstract: 150 VOLT 10 AMP IGBT circuit 50 Amp 300 volt diode 2MBI100N-060 250 Amp current 1500 volt diode P607 2mbi75n collmer igbt
Contextual Info: B 2H 3B 7TE 0D 03«n5 7M0 • THIRD GENERATION IGBT <S I Low Saturation Voltage ■ Short Circuit Limiting ■ Low Switching Losses ■ Square RBSOA ■ Less Total Power Dissipation ■ Minimized Internal Stray Inductance 600 VOLT, N-SERIES SINGLE MODULES

industrial induction heat circuit

Contextual Info: OM6537SP1/SP2 OM6539SP1/SP2 OM6541SP1/SP2 OM6538SP1/SP2 OM6540SP1/SP2 OM6542SP1/SP2 500 Volt And 1000 Volt, 5 To 25 Amp, N-Channel IGBTs With Uncommitted Ultra Fast Diodes In Multi-Chip Packages FEATURES APPLICATIONS • • • • • • • • One Or Two Circuits Per Package

3TF44

Abstract: 3TF52 3tf42 3TF46 3TF4222 3TF4422 simoreg 6ra24 3TF4222-0A 3TF4822 3TF5222-0AK6
Contextual Info: 2. Parts & Service Page 2-1 2.1 Power Module Part Numbers: 5 to 300 HP @ 500 VDC RATING (Amps DC) 1Q PART NUMBER 1Q TYPE (MLFB) 4Q PART NUMBER 4Q TYPE (MLFB) 15 30 60 90 123 175 255 510 A1-116-110-503 A1-116-110-504 A1-116-110-505 A1-116-110-506 A1-116-110-508

BI400N

Contextual Info: • 22307^2 OOOB^E: bö? ■ THIRD GENERATION IGBT § 1200 VOLT, N-SERIES SINGLE MODULES • 200 - 600 Amp Device Pc VcE(sat PeriGST Max. lc ton toff Volts Amps Watts Volts Amps usee. usee. 1200 1200 1200 1200 1200 1200 1200 1200 200 300 300 300 400 400

diode cross reference

Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Contextual Info: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: Support@diotec-usa.com DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS

KBPC25

Contextual Info: Data Sheet 10 to 40 Amp SINGLE PHASE SILICON BRIDGE Semiconductor Features • BUILT-IN IN TEG RA L HEAT SIN K ■ UP TO 400 AMP SURGE OVERLOAD RATING ■ U L RECO GN ITIO N A VA ILA BLE ■ OPTION O F W IRE LEA D S OR FASTON TERM IN ALS E le c tric a l C h a ra c te ristic s @ 25*C .

7MB150N-120

Abstract: 7MB140N-120 IGBT 400 amp IGBT 50 amp 1200 volt p607 150 VOLT 12 AMP diode 7MBR15NF120 7mbr25nf120 2MBI75N-120 7MBR10NF120
Contextual Info: • 22 3 fl7T e O O O B ^ b bô? <s ■ THIRD GENERATION IGBT 1200 VOLT, N-SERIES SINGLE MODULES • 200 - 600 Amp Device VCES. Type lc Pc Cont. P er IGBT Volts A m ps 200 1200 1200 300 1200 300 1200 300 1200 400 1200 : 400 400 1200 1200 600 1MBI200N-120 1MBI300N-120

2MB150N-060

Abstract: 2mb175n-060 2mb1300n-060 2mb1200n-060 P607 IGBT 400 amp 150 VOLT 10 AMP IGBT circuit 2mb175n 2mb1150 2mb1200n 120
Contextual Info: Hl B2 3Ö7 TE OOQB' ns 7MO • THIRD GENERATION IGBT I Low Saturation Voltage ■ Short Circuit Limiting ■ Low Switching Losses ■ Square RBSOA ■ Less Total Power Dissipation ■ Minimized Internal Stray Inductance 600 VOLT, N-SERIES SINGLE MODULES • 400 & 600 Amp

MU310

Abstract: MU39 MU37 MU38 1000 v fast recovery rectifier diodes
Contextual Info: Bk MOSPEC MU37 thru MU310 Surface Mount Ultrafast Power Rectifiers ULTRA FAST RECTIFIERS Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where compact size and weight are critical to the system.

MC68B21CP

Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Contextual Info: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References

TPFD-7501-1A

Abstract: TVS7524PFA TVS7524PFC
Contextual Info: DIOTEC ELECTRONICS CORP Data Sheet No. TPFD-7501-1A 18020 Hobart Blvd., Unit B Gardena, CA 90248 U.S.A Tel.: 310 767-1052 Fax: (310) 767-7958 75 AMP 24 VOLT PRESS FIT TVS DIODES MECHANICAL SPECIFICATION FEATURES _ 0.002” 0.052” + VOID FREE VACUUM DIE SOLDERING FOR MAXIMUM

10URD73TTF1000

Abstract: ferraz A130 URD 73 URD 44 URD 44 TTF URD 73 TTF ferraz a110 A130URD73TTI0630 B300726 100 amp 1000 volt GTO 11URD71TTF0500
Contextual Info: PSC SQUARE BODY 1250/1300 Volt SEMICONDUCTOR PROTECTION FUSES Ferraz Shawmut 1250/1300V PSC fuse-links provide maximum flexibility in equipment design and ultimate protection for today’s power conversion equipment. These square body fuse-links are available in four different body sizes, each size having four worldwide acceptable mounting styles. The different mounting styles

NTE5810

Abstract: NTE5811 NTE5870 NTE5891 NTE587
Contextual Info: NTE5810 & NTE5811, NTE5870 thru NTE5891 Silicon Power Rectifier Diode, 12 Amp, DO4 Description: The NTE5810, NTE5811, and NTE5870 through NTE5891 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.

ferraz 6.9 URD 33 TTF 1400

Abstract: URD 30 TTF 6,6 URD 233 TTF 1600 E300269 ferraz 6.9 URD 33 TTF 1250 6,6 URD 33 TTF 1000 6URD33TTF1600 A070URD33LI0800 X300216 A065URD33TTI1800
Contextual Info: PSC SQUARE BODY 690/700 Volt SEMICONDUCTOR PROTECTION FUSES Ferraz Shawmut 690/700V PSC fuse-links provide maximum flexibility in equipment design and ultimate protection for today’s power conversion equipment. These square body fuse-links are available in four different body sizes, each size having seven

NTE5869

Abstract: NTE5850 transistor c 5855
Contextual Info: NTE5850 thru NTE5869 Silicon Power Rectifier Diode, 6 Amp, DO4 Description and Features: The NTE5850 through NTE5869 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.

NTE5911

Abstract: "Power rectifier Diode" 435a2s 10 AMP 1000V RECTIFIER DIODE NTE5892 NTE5899 NTE5900
Contextual Info: NTE5892 thru NTE5899 NTE5900 thru NTE5911 Silicon Power Rectifier Diode, 16 Amp, DO4 Description and Features: The NTE5892 through NTE5911 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.

493a2s

Abstract: NTE5844 NTE584 10 AMP 1200V RECTIFIER DIODE NTE5845 NTE5912 NTE5933 NF-2A
Contextual Info: NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode 20 Amp, DO4 Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.

Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics: