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1010A
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Test Products International
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Equipment - Environmental Testers, Test and Measurement, INDOOR AIR QUALITY METER |
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1010A204F
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Winchester Interconnect
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Connectors, Interconnects - Coaxial Connectors (RF) - CONN SMB PLUG STR 50OHM CRIMP |
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585.47KB |
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1010A204M
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Winchester Interconnect
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Connectors, Interconnects - Coaxial Connectors (RF) - CONN SMB PLUG STR 50OHM CRIMP |
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585.47KB |
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1010A204MS
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Winchester Interconnect
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Connectors, Interconnects - Coaxial Connectors (RF) - CONN SMB PLUG STR 50OHM CRIMP |
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585.47KB |
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CJ13-081921010A20
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JCET Group
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8.192MHz SMD3225 quartz crystal resonator with 10pF load capacitance, ±10ppm frequency tolerance, fundamental mode, resonance resistance up to 120 ohms, and operating temperature from -20 to +70°C. |
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JMSL1010AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET with 8.3 mΩ typical RDS(ON) at 10V VGS, 86A continuous drain current, TO-252-3L package, low gate charge, and AEC-Q101 qualification for automotive applications. |
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JMSH1010AKQ
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in TO-252-3L package with 9.2 mΩ typical RDS(ON) at 10V VGS, 79A continuous drain current, low gate charge, and AEC-Q101 qualification for automotive applications. |
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PBU-1010A-R12T
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JWD
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Power Bead Inductor PBC-1010A-RXXT series features single turn construction, ferrite core, ultra-low DCR, high energy density, flat inductance over frequency, rated current up to 78 A, operating temperature from -40°C to +125°C, and RoHS compliance. |
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PBU-1010A-R15T
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JWD
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Power Bead Inductor PBC-1010A-RXXT series features single turn construction for ultra low DCR, ferrite core for minimal AC loss, high energy density, flat inductance over frequency, automated assembly, operating temperature -40°C to +125°C, and RoHS compliance. |
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JMSL1010AC
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in TO-220-3L package with 7.9 mΩ typical RDS(ON) at 10V VGS, 72A continuous drain current, low gate charge, and ultra-low on-resistance for power management and motor driving applications. |
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PBU-1010A-R08T
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JWD
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Power Bead Inductor PBC-1010A-RXXT series features single turn construction, ferrite core for low DCR and minimized AC loss, high energy density, flat inductance over frequency, rated current up to 78 A, operating temperature from -40°C to +125°C, and RoHS compliance. |
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JMSL1010AK
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Jiangsu JieJie Microelectronics Co Ltd
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100V N-channel Power MOSFET in TO-252-3L package with 8.3 mΩ typical RDS(ON) at 10V VGS, 70A continuous drain current, low gate charge, and 1.1°C/W junction-to-case thermal resistance. |
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JMSH1010AK
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Jiangsu JieJie Microelectronics Co Ltd
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100 V, 64 A N-channel Power MOSFET in TO-252-3L package with 9.2 mΩ typical RDS(ON) at 10 V VGS, suitable for power management and motor driving applications. |
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CJ13-400001010A20
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JCET Group
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SMD3225 quartz crystal resonator with 40MHz nominal frequency, 10pF load capacitance, ±10ppm frequency tolerance, fundamental mode operation, and operating temperature range from -20°C to +70°C. |
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CJ13-240001010A20
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JCET Group
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SMD3225 quartz crystal resonator with 24MHz nominal frequency, 10pF load capacitance, ±10ppm frequency tolerance, fundamental mode oscillation, and operating temperature range from -20°C to +70°C. |
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ACJT610-10A
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Jiangsu JieJie Microelectronics Co Ltd
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6A TRIAC with 1000V repetitive peak off-state voltage, suitable for AC switching in heating, motor control, and lighting applications, featuring integrated TVS structure, 2500 VRMS rated insulation voltage, and TO-220A package. |
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JMSL1010AP
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Power MOSFET with 100 V drain-source voltage, 11 A continuous drain current, 9.2 mΩ typical RDS(ON) at VGS = 10 V, and 11.8 mΩ at VGS = 4.5 V, housed in an SOP-8L package. |
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PBU-1010A-R010T
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JWD
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Power Bead Inductor PBC-1010A-RXXT series features single turn construction for ultra low DCR, ferrite core for minimized AC loss, high energy density, flat inductance over frequency, rated currents up to 78 A, and operating temperature from -40°C to +125°C. |
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JMSH1010AC
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel power MOSFET JMSH1010AC/AE with 100 V drain-source voltage, 65 A continuous drain current, 9.4 mOhm typical RDS(ON) at 10 V VGS, and low gate charge for high-efficiency power management applications. |
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JMSH1010AE
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Jiangsu JieJie Microelectronics Co Ltd
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N-channel Power MOSFET JMSH1010AC with 100 V drain-source voltage, 65 A continuous drain current, and 9.4 mΩ on-resistance at 10 V gate-source voltage. |
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CJ13-081921010A20
