10 WATTS ZENER DIODE Search Results

Contextual Info: DIGITRON SEMICONDUCTORS SMC SERIES TRANSIENT ABSORPTION ZENER DIODES 5.0 THROUGH 170.0 VOLTS, 1500 WATTS UNIDIRECTIONAL AND BIDIRECTIONAL CONSTRUCTION 1500 watts of peak power dissipation 10 x 1000µs tclamping (0 volts to V(BR) min): less that 1 x 10-12 seconds

IN5388

Abstract: 1N5349 IN5358 1N5361 1N5378 5380 zener
Contextual Info: ZENER DIODES Zener Type No. Zener Voltate it IlT <§ mA Volts Zener Voltaje Tolerance Max. Zener Impedance @ In Ohms Power Rating Device Package 5 watts DO 27 A I N 5346 1 N 5347 9.1 10 150 125 2 .0 2 .0 1N 5348 1 N 5349 1N 5350 11 12 13 125 100 100 2.5 2.5

zener diode f7 850

Abstract: zener diode marking E7 c27p marking code f6 DIODE diode SMA marking code 10 BZD27C24 BZD27C BZD27-C100P BZD27C12P BZD27-C200P
Contextual Info: BZD27C SERIES 0.8 Watts Voltage Regulator Diodes Sub SMA Features Silicon planar zener diodes Low profile surface-mount package Zener and surge current specification Low leakage current Excellent stability High temperature soldering: 260oC / 10 sec. at terminals

1N3005A

Contextual Info: MOTOROLA SC -CDIODES/OPTO} 15E D | L3L7ESS □ □7ciaE3 1 | - T-JH7 1N2970A MOTOROLA im m • SEMICONDUCTOR l TECHNICAL DATA thru ■ 1N3015A 10 WATTS ZENER DIODES ZENER DIODES Diffused-junctlon zener diodes for both military and highreliability Industrial applications. Available with anode-to-case

1N2986

Abstract: 1N3009 IR 1N3000 1N3005 1n2974 1N2989 DIODES 1n3001 1N3012
Contextual Info: S O L I D S TAT E INC. 1N2970 – 1N3015 Your TOTAL solutions source! 10 WATTS ZENER DIODES DO4 ZENER DIODES Available with anode-to-case and cathode-to-case connections standard and reverse polarity, i.e., 1N2970 and 1N2970R. The type numbers shown have

Contextual Info: ¿g, * SMZG AND SMZJ 3789 THRU 3809B ^ SURFACE MOUNT ZENER DIODE Zener Voltage -10 to 68 Volts Steady State Power - 1 . 5 Watts DO-214AA MODIFIED J-BEND DO-215AA 7 r t[ 0.83 2.10 0.077(1.96) 0.155 (3.94) 0.130 (3.30) L \\ T 0.096 (2.44) 0.084(2.13) / 0.095(2.41) I

Contextual Info: DIGITRON SEMICONDUCTORS 1N2970-1N3015B AND 1N3993 THRU 1N4000A 10 WATT ZENER DIODES MAXIMUM RATINGS JUNCTION TEMPERATURES -65°C TO +175°C STORAGE TEMPERATURES -65°C TO +200°C DC POWER DISSIPATION 10 WATTS POWER DERATING 80 mW/°C ABOVE 50°C FORWARD VOLTAGE

Contextual Info: SMZG AND SMZJ 3789 THRU 3809B SURFACE MOUNT ZENER DIODE Zener Voltage -10 to 68 Volts Steady State Power -1.5 Watts DO-214AA MODIFIED J-BEND DO-215AA i=srr 0155 3.94 0.130 (3.30) ±“ 1 3k 0.016(0.41 ) 0.006 ( 0 .1 5 ) \ TT T 0.058 d'.47)\ 0.038(0.97) I'

BZW50

Abstract: BZW50 Series 47B diode BZW50-10 BZW50-12 BZW50-15 BZW50-18 BZW50-22 BZW50-27 BZW50-33
Contextual Info: BZW50 Series TRANSIENT VOLTAGE SUPPRESSOR Stand-off Zener Voltage: 10 - 180 Volts Peak Power: 5000 Watts D6 FEATURES : * 5000W 10/1000µs Peak Pulse Power * Excellent clamping capability * Low incremental surge resistance * Fast response time : typically less

CZRB3110

Abstract: CZRB3115 CZRB3120 CZRB3350 ZENER 244
Contextual Info: Surface Mount Zener Diodes COMCHIP www.comchiptech.com CZRB3110 -CZRB3350 Voltage:110-350 Volts Power: 3.0 Watts Features Low profile package Built-in strain relief 5 & 10% Voltage Tolerances available Excellent clamping capability Wide voltage range Meets UL specification 94V-0

CZRB2110

Abstract: CZRB2115 CZRB2120 CZRB2350 C 12 PH* Zener
Contextual Info: Surface Mount Zener Diodes COMCHIP www.comchiptech.com CZRB2110 -CZRB2350 Voltage:110-350 Volts Power: 2.0 Watts Features Low profile package Built-in strain relief 5 & 10% Voltage Tolerances available Excellent clamping capability Wide voltage range Meets UL specification 94V-0

Contextual Info: ZENER DIODES, 50 WATTS, DO-5 PACKAGE S t o « ill & mm N um ber 2 a tter Zener Voltage T ee l a t „ C u rre n t ¥> t«A> M aximum 2ener Im pedance at l,*S 0mA at l„ (m A ) 2,. (Ohm s) 1N33Q5 1NS3Q& 1N3307 1N3308 1N3309 6.8 7.5 8.2 9.1 10 1850 1700 1N3310

Contextual Info: 1N4728A-G~1N4764A-G SILICON ZENER DIODE VOLTAGE 3.3 to 100 Volts POWER 1.0 Watts FEATURES • Low profile package 0.030 0.75 0.026(0.65) 1.0(26.0)MIN. • Built-in strain relief • Low inductance • High temperature soldering : 260°C /10 seconds at terminals

Contextual Info: 1N4728A-G~1N4764A-G SILICON ZENER DIODE VOLTAGE 3.3 to 100 Volts POWER 1.0 Watts FEATURES • Low profile package 0.030 0.75 0.026(0.65) 1.0(26.0)MIN. • Built-in strain relief • Low inductance • High temperature soldering : 260°C /10 seconds at terminals

BU323Z

Contextual Info: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360–450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is

RBE 215 RELAY

Abstract: bu323z
Contextual Info: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is

BU323Z

Abstract: free ic 555 BU323Z-D transistor ignition circuit
Contextual Info: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is

BU323Z

Contextual Info: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360 −450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high−voltage power Darlington with a built−in active zener clamping circuit. This device is

BU323Z

Abstract: HIGH ENERGY IGNITION CIRCUIT darlington transistor with built-in temperature c
Contextual Info: ON Semiconductort BU323Z NPN Silicon Power Darlington High Voltage Autoprotected AUTOPROTECTED DARLINGTON 10 AMPERES 360–450 VOLTS CLAMP 150 WATTS The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is

Zener Diode ST 41

Abstract: 1N4742A ST 1N4744A ST Diode case DO41
Contextual Info: DATA SHEET 1N4729A~1N4764A GLASS PASSIVATED JUNCTION SILICON ZENER DIODE VOLTAGE 3.6 to 100 Volts 1.0 Watts POWER DO-41 Unit: inch mm FEATURES • Low profile package • Built-in strain relief • Low inductance • High temperature soldering : 260°C /10 seconds at terminals

1N5656A JANTX

Contextual Info: DIGITRON SEMICONDUCTORS 1N5629-1N5665 TRANSIENT ABSORPTION ZENER MAXIMUM RATINGS Operating and Storage Temperature -65 to +175°C DC Power Dissipation 1 watt @ TL ≤ 125°C, 3/8” from body Thermal Resistance 1500 watts for 10/1000 s with repetition rate of 0.01 @

zener diodes color coded

Abstract: colour code diode zener zener color codes ZENER SINGLE COLOR CODE 200V Zener Diode Zener Diode 39 volts 2 watts zener diode 1 watt 15v zener diode having 11 volts zener diode color code zener diode 68v
Contextual Info: SURFACE MOUNT GALSS PASSIVATED ZENER DIODE Zener Voltage MZ1.5PB11V-34.1 THRU MZ1.5PB200V-1.9 11 to 200 Volts Steady state Power 1.5 Watts FEATURES • • • • • • • • DO-214AA SMB For surface mounted applications in order to Optimize board space

zener diode 12v 0.5 w

Abstract: zener diode 9,1v 0.5 w zener diode 6.8v Zener diode 183 160V zener diode 80 V 1 watt zener diode SMA5936B zener diode 68v zener diode 1 watt ZENER DIODE 18 volt 5 watt
Contextual Info: SMA5921 THRU SMA5945 VOLTAGE 6.8V ~ 68V Elektronische Bauelemente 1.5 Watts Surface Mount Zener Diode RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SMA FEATURES . . . . . For surface mounted applications 1.5 W power dissipation Low reverse current

1n3016 microsemi

Abstract: DO-213ab marking 1N3016 1N3016BUR-1 1N3051 1N3051BUR-1 DO-213AB MLL3016B MLL3051B Microsemi micronote series 050
Contextual Info: 1N3016BUR-1 thru 1N3051BUR-1, e3 or MLL3016B thru MLL3051B, e3 Surface Mount 1.5 W GLASS ZENER DIODES SCOTTSDALE DIVISION APPEARANCE This surface mountable zener diode series is similar to the 1N3016 thru 1N3051 JEDEC registration in the DO-13 package except that it meets the