10 PIN LASER DIODE Search Results

SPL980-10-9-PD

Abstract: slp980
Contextual Info: SPL980-10-9-PD Pigtailed Coaxial Laser Diode Features Applications • • • • • • 980 nm SM Fiber Coaxial package Built-in PD Medical laser treatment Communication Electrical Connection Pin Configuration Bottom View n-type PIN 1 2 3 Function LD Cathode

SPL850-10-4P-PD

Contextual Info: SPL850-10-4P-PD TECHNICAL DATA Pigtailed Coaxial Laser Diode Features Applications • • • • • • 850 nm PM Fiber Coaxial package Built-in PD Medical laser treatment Printing Electrical Connection Pin Configuration PIN 1 2 3 Bottom View Function PD Anode

TOLD9442M

Abstract: laser diode toshiba 650
Contextual Info: TOLD9442M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

laser diode toshiba

Abstract: TOLD9231M 670NM Laser-Diode told daiode
Contextual Info: TOLD9231M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9231M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

laser diode toshiba

Abstract: told laser diode toshiba 650 650nm 5mw laser diode 650NM laser diode 5mw
Contextual Info: TOLD9441 MD TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9441 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE

laser diode toshiba

Abstract: told 2 Wavelength Laser Diode 670NM Laser-Diode laser diode 670nm Shibaura
Contextual Info: TOLD9221M TOSHIBA TOSHIBA LASER DAIODE InGaAlP TOLD9221M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 LD 0 0 3 I @ PD 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

laser diode toshiba

Abstract: TOLD9221M 670NM Laser-Diode DAiode
Contextual Info: TOLD9221M TO SH IBA TOSHIBA LASER DAIODE InGaAlP TOLD9221M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

laser diode toshiba

Abstract: 670NM Laser-Diode laser diode 670nm
Contextual Info: TOLD9231M TO SH IBA TOSHIBA LASER DAIODE InGaAlP TOLD9231M Lasing Wavelength : Ap = 670nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

laser diode toshiba

Abstract: TOLD9442M laser diode toshiba 650 TOLD told9442 daiode
Contextual Info: TO SH IBA TOLD9442M TOSHIBA LASER DAIODE InGaAlP TOLD9442M Lasing Wavelength : Ap = 650 nm Typ. Optical Output Power : P0 = 5 mW Operation Case Temperature : Tc = —10~60°C Pin Connection 10 0 3 LD 0 @ PD I 1. LASER DIODE CATHODE 2. LASER DIODE ANODE PHOTODIODE CATHODE

NX8346

Contextual Info: LASER DIODE NX8346TS 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

Thermistor bth 100

Abstract: 10 gb laser diode DFB ea 10 gb diode pin 1550 nm
Contextual Info: Drawing No. JOG-00853 OKI Electronics Components Preliminary OL5150M Rev. 3:[10. 2001] 1550 nm 10 Gb/s EA Modulator Integrated DFB Laser 1. DESCRIPTION OL5150M is a 1550-nm DFB laser diode monolithically integrated with an electro-absorption EA modulator for 10 Gb/s operation in a 7-pin package with a K-connector.

nec 2702

Abstract: 2702 NEC NX8341 NX8341UH NX8341UJ NX8341UL NX8341TB-AZ 10 gb laser diode 5PIN g 995
Contextual Info: LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

NX8341

Abstract: NX8341UH NX8341UJ NX8341UL NX8341UN 10 gb laser diode NX8341UJ-AZ
Contextual Info: LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

TOSA pcb

Contextual Info: LASER DIODE NX8346TB,NX8346TY 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type

NEC DIODE LASER

Contextual Info: DATA SHEET LASER DIODE NX8346TS 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TS is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

Laser Diode 14 pin DIL

Abstract: LSC3100 LSC3300 LSC3X00 spot light size photodiode
Contextual Info: 14 Pin DIL Uncooled Laser Modules Technical Data LSC3X00 Features Description • Low Cost Plastic Package 14 Pin DIL • LSC3300: 100 µW (-10 dBm) Min. Power Output LSC3100: 1 mW (0 dBm) Min. Power Output • 1280 - 1330 nm Wavelength • Hermetic Laser Module

Contextual Info: DATA SHEET LASER DIODE NX8346TB,NX8346TY 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8346TB and NX8346TY are 1 310 nm Multiple Quantum Wells MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type

NX8341UJ

Abstract: NX8341 NX8341UH NX8341UL NX8341UN 6R01 10 gb laser diode NX8341TB
Contextual Info: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

Contextual Info: Preliminary Data Sheet NX6414EH LASER DIODE 1 490 nm InGaAsP MQW-DFB LASER DIODE FOR GIGABIT ETHERNET AND Point to Point APPLICATION R08DS0042EJ0100 Rev.1.00 Jun 10, 2011 DESCRIPTION The NX6414EH is a 1 490 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

laser diode toshiba

Abstract: 2 Wavelength Laser Diode 650NM laser diode 5mw DAiode laser diode toshiba 650
Contextual Info: TOLD9441 MD TO SH IBA TOSHIBA LASER DAIODE InGaAlP T O L D 9 4 4 1 MD Lasing Wavelength : Ap = 650nm Typ. Optical Output Power : P0 = 5mW Operation Case Temperature : T e = —10~70°C Pin Connection 10 LD 0 0 3 @ PD I 1. LASER DIODE ANODE 2. LASER DIODE CATHODE

nec 2702

Abstract: nec 2702 K
Contextual Info: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package

Contextual Info: Preliminary Data Sheet NX6342EP LASER DIODE 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s BASE-LR/LW APPLICATION R08DS0050EJ0100 Rev.1.00 Jan 19, 2012 DESCRIPTION The NX6342EP is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

Contextual Info: Preliminary Data Sheet NX6240GP LASER DIODE 1 270 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s E-PON ONU APPLICATION R08DS0057EJ0100 Rev.1.00 Mar 01, 2012 DESCRIPTION The NX6240GP is a 1 270 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.

nec 2702

Contextual Info: DATA SHEET LASER DIODE NX8341 Series 1 310 nm AlGaInAs MQW-DFB LASER DIODE FOR 10 Gb/s APPLICATION DESCRIPTION The NX8341 Series is a 1 310 nm Multiple Quantum Well MQW structured Distributed Feed-Back (DFB) laser diode TOSA (transmitter optical subassembly) with InGaAs monitor PIN-PD in a receptacle type package