10 MARKING CODE DUAL TRANSISTOR SOT563 Search Results

SOT89 transistor marking

Abstract: SOT89 MARKING CODE PNP TRANSISTOR "SOT89" marking code NA sot23 Transistor 5C5 "PNP Transistor" PNP TRANSISTOR SOT89 PNP Epitaxial Silicon Transistor sot223 sot89 "NPN TRANSISTOR" NPN transistor collector base and emitter
Contextual Info: PRODUCT announcement New Tiny Packages High Voltage Small Signal Transistors SOT-563 SOT-523 Dual Single SOT-23 SOT-89 SOT-223 SOT-228 Single Single Single Dual features • VCEO = 160V NPN , 150V (PNP) • IC = 600mA (NPN), 500mA (PNP) • Ideal for high voltage amplifier applications

MARKING 67 SOT89

Abstract: transistor 5551 sot-89 marking code transistor sot code amplifier marking code D amplifier marking code a transistor sot sot-223 code marking 5551 datasheet SOT89 MARKING CODE
Contextual Info: PRODUCT announcement Higher Current, High Voltage NPN Transistors SOT-228 SOT-223 SOT-89 SOT-23 SOT-563 Dual Single Single Single Single Sample Devices features • Higher current than standard 5551 available 1.0 Amp vs. standard current 600mA • Single and Dual configurations

marking L07

Abstract: CMLT2907A
Contextual Info: CMLT2907A SURFACE MOUNT DUAL PNP SILICON TRANSISTOR SOT-563 CASE MAXIMUM RATINGS: TA=25°C SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature

Contextual Info: CMLT5088EM SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5088EM consists of two individual, isolated 5088E NPN silicon transistors with matched VBE ON characteristics. This device is designed for applications requiring high

Contextual Info: CMLT5087EM SURFACE MOUNT SILICON DUAL, MATCHED PNP TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5087EM consists of two individual, isolated 5087E PNP silicon transistors with matched VBE ON characteristics. This device is designed for applications requiring high

Contextual Info: CMLT8099M SURFACE MOUNT SILICON DUAL, MATCHED NPN TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT8099M consists of two individual, isolated 8099 NPN silicon transistors with matched VBE ON characteristics. This device is manufactured by the epitaxial planar

Contextual Info: CMLT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON DUAL PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface

dual npn 500ma

Abstract: npn switching transistor 60v CMLT2222A MARKING CODE l22
Contextual Info: Central CMLT2222A SURFACE MOUNT DUAL NPN SMALL SIGNAL SWITCHING TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2222A type is a dual NPN small signal switching transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount

CMLDM7005R

Contextual Info: CMLDM7005 CMLDM7005R SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: These CENTRAL SEMICONDUCTOR devices are dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier and driver

Contextual Info: CMLT2207G SURFACE MOUNT SILICON DUAL, COMPLEMENTARY TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2207G consists of one isolated 2N2222A NPN transistor and one complementary isolated 2N2907A PNP transistor, manufactured by the epitaxial planar process and

Contextual Info: CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier

Contextual Info: CMLDM7005 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7005 consists of dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier

Contextual Info: CMLDM7005 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7005 consists of dual N-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier

Contextual Info: CMLDM8005 SURFACE MOUNT SILICON DUAL P-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of dual P-Channel enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier

7c3 transistor

Contextual Info: CMLDM3737 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3737 consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier

Contextual Info: CMLDM7005 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7005 consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier

VDS16V

Abstract: 7c3 transistor 10 marking code dual transistor sot563
Contextual Info: CMLDM3737 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3737 consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier

Contextual Info: CMLDM3737 SURFACE MOUNT SILICON DUAL N-CHANNEL ENHANCEMENT-MODE MOSFET w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM3737 consists of dual silicon N-Channel enhancement-mode MOSFETs designed for high speed pulsed amplifier

CMLDM8005

Contextual Info: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier

Contextual Info: CMLDM7005 SURFACE MOUNT DUAL N-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM7005 consists of Dual N-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier

cc8 transistor

Abstract: CMLDM8005
Contextual Info: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier

Contextual Info: CMLDM8005 SURFACE MOUNT DUAL P-CHANNEL ENHANCEMENT-MODE SILICON MOSFETS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLDM8005 consists of Dual P-Channel Enhancement-mode silicon MOSFETs designed for high speed pulsed amplifier

Contextual Info: Central CMLT2207 Semiconductor Corp. SURFACE MOUNT PlCOmini™ DUAL,COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The Central Semiconductor CMLT2207 con­ sists of one 2N2222A NPN silicon transistor and one individual isolated complementary 2N2907A PNP silicon transistor, manufactured

CMLT8099M

Contextual Info: Central CMLT8099M TM Semiconductor Corp. SURFACE MOUNT DUAL, MATCHED NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT8099M consists of two individual, isolated 8099 NPN silicon transistors with matched VBE ON characteristics. This PICOminiTM device is manufactured by the epitaxial