1.8V SRAM Search Results

Contextual Info: PIC12LF1552 8-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features: • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 200 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical

Contextual Info: PIC12LF1552 8-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features: • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 200 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical

PIC16F1503

Contextual Info: PIC16 L F1503 14-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features (PIC16LF1503): • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 260 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical

PIC12 example pwm

Contextual Info: PIC12 L F1501 8-Pin Flash, 8-Bit Microcontrollers High-Performance RISC CPU: Low-Power Features (PIC12LF1501): • • • • • • Standby Current: - 20 nA @ 1.8V, typical • Watchdog Timer Current: - 260 nA @ 1.8V, typical • Operating Current: - 30 A/MHz @ 1.8V, typical

QRMM0010

Contextual Info: QRMM0010 QUALIFICATION REPORT M36DR864CB/DB: 64 Mbit x16, Burst Flash Memory and 8 Mbit (x16) SRAM, 1.8V Multiple Memory Product INTRODUCTION The M36DR864CB/DB is a Multiple Memory Product which combines two memory technologies: a 64 Mbit 1.8V supply Flash memory and an 8 Mbit 1.8V supply Asynchronous SRAM. The Flash and SRAM components have separate power supplies and grounds and are distinguished by three chip enable inputs.

ECHO schematic diagrams

Abstract: IS61NSCS25672 IS61NSCS25672-250B IS61NSCS25672-300B IS61NSCS25672-333B IS61NSCS51236 IS61NSCS51236-250B
Contextual Info: IS61NSCS25672 IS61NSCS51236 ISSI Σ RAM 256K x 72, 512K x 36 ADVANCE INFORMATION JUNE 2001 18Mb Synchronous SRAM Features • JEDEC SigmaRam pinout and package standard • Single 1.8V power supply VCC : 1.7V (min) to 1.9V (max) • Dedicated output supply voltage (VCCQ): 1.8V

Contextual Info: IS61LSCS25672 IS61LSCS51236 ISSI SRAM 256K X 72, 512K X 36 ADVANCE INFORMATION JUNE 2002 18MB SYNCHRONOUS SRAM FEATURES • JEDEC SigmaRam pinout and package standard • Single 1.8V power supply VCC : 1.7V (min) to 1.9V (max) • Dedicated output supply voltage (VCCQ): 1.8V

Contextual Info: MX65U28F64/MX65U64F32 1.8V MXSMIO SERIAL MULTI I/O FLASH MEMORY MCP WITH MULTIPLEXED, BURST MODE, PSEUDO SRAM MX65U28F64 MX65U64F32 DATASHEET P/N:PM1730 REV. 1.0, JUL. 22, 2013 1 MX65U28F64/MX65U64F32 128M-BIT/64M-BIT [x 1/x 2/x 4] 1.8V CMOS MXSMIO

Contextual Info: STATIC SRAM RAM Random Access Memory 1.8V IndustrialTemp LowVoltage LowPower TSOP LH51V256HT-85SL 256K

MB82DBS04163C

Abstract: MT45W4MW16B Micron 256MB NOR FLASH micron vccp MT45W4MW
Contextual Info: TN-45-16: CellularRAM Replacing Fujitsu 1.8V FCRAM Introduction Technical Note Using CellularRAM Memory to Replace Fujitsu 1.8V FCRAM Introduction Micron CellularRAM™ devices are designed to be backward compatible with 6T SRAM and early-generation asynchronous and page PSRAM. Designs requiring high speed and

SLC NAND endurance 100k

Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0

samsung 2GB Nand flash 121 pins

Abstract: samsung 2GB Nand flash TOGGLE sensing nand flash memory SAMSUNG Electronics Toggle DDR NAND flash
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB6 MuxOneNAND2G(KFN2G16Q2M-DEB6) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1

OneNAND

Abstract: 63FBGA KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 NAND Flash MLC
Contextual Info: OneNAND4G KFW4G16Q2M-DEB6 OneNAND2G(KFH2G16Q2M-DEB6) OneNAND1G(KFG1G16Q2M-DEB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB6 1.8V(1.7V~1.95V)

KFW4G16Q2M-DEB5

Abstract: OneNAND KFH2G16Q2M-DEB5 USB Flash Memory SAMSUNG 63FBGA KFG1G16Q2M-DEB5
Contextual Info: OneNAND4G KFW4G16Q2M-DEB5 OneNAND2G(KFH2G16Q2M-DEB5) OneNAND1G(KFG1G16Q2M-DEB5) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB5 1.8V(1.7V~1.95V)

4GB MLC NAND

Abstract: samsung 2GB Nand flash samsung 1Gb nand flash Samsung Electronics. NAND flash memory Samsung MLC 63FBGA KFG1G16Q2M-DEB6 KFH2G16Q2M-DEB6 KFW4G16Q2M-DEB6 0235H
Contextual Info: OneNAND4G KFW4G16Q2M-DEB6 OneNAND2G(KFH2G16Q2M-DEB6) OneNAND1G(KFG1G16Q2M-DEB6) FLASH MEMORY OneNANDTM Specification Density Part No. VCC(core & IO) Temperature PKG 1Gb KFG1G16Q2M-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFH2G16Q2M-DEB6 1.8V(1.7V~1.95V)

samsung 2GB Nand flash 121 pins

Abstract: SLC NAND endurance 100k
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.1

Flash Memory datasheet mmc

Abstract: TCA 785 application note mlc nand flash lsb msb SLC NAND endurance 100k KFN2G16Q2M-DEB5 samsung "nor flash" sensing Samsung oneNand Mux TCA 785 63FBGA KFM1G16Q2M-DEB5
Contextual Info: MuxOneNAND1G KFM1G16Q2M-DEB5 MuxOneNAND2G(KFN2G16Q2M-DEB5) FLASH MEMORY MuxOneNANDTMSpecification Density Part No. VCC(core & IO) 1Gb KFM1G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) 2Gb KFN2G16Q2M-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) Version: Ver. 1.0

Contextual Info: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB6 2.65V(2.4V~2.9V) Extended

OneNAND

Abstract: SLC NAND endurance 100k KFG5616Q1A-DEB6 KFG5616Q1A-PEB6 KFG5616U1A-DIB6 KFG5616U1A-PIB6 mlc nand flash lsb msb r0400h
Contextual Info: OneNAND256 KFG5616x1A-xxB6 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB6 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB6 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616U1A-DIB6 3.3V(2.7V~3.6V) Industrial

onenand

Contextual Info: OneNAND256 KFG5616x1A-xxB5 FLASH MEMORY OneNANDTM Specification Density 256Mb Part No. VCC(core & IO) Temperature PKG KFG5616Q1A-DEB5 1.8V(1.7V~1.95V) Extended 67FBGA(LF) KFG5616Q1A-PEB5 1.8V(1.7V~1.95V) Extended 48TSOP1 KFG5616D1A-DEB5 2.65V(2.4V~2.9V) Extended

Contextual Info: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB6 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216D2A-DEB6 2.65V(2.4V~2.9V) Extended

8044H

Abstract: SAMSUNG 256Mb NAND Flash Qualification Report
Contextual Info: OneNAND512 KFG1216x2A-xxB5 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB5 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB5 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216D2A-DEB5 2.65V(2.4V~2.9V) Extended

KFG1216U2A-DIB6

Abstract: mlc nand flash lsb msb samsung KFG1216U2A-DIB6 oneNand 63FBGA KFG1216Q2A-DEB6 KFG1216Q2A-FEB6 KFG1216U2A-FIB6
Contextual Info: OneNAND512 KFG1216x2A-xxB6 FLASH MEMORY OneNANDTM Specification Density 512Mb Part No. VCC(core & IO) Temperature PKG KFG1216Q2A-DEB6 1.8V(1.7V~1.95V) Extended 63FBGA(LF) KFG1216Q2A-FEB6 1.8V(1.7V~1.95V) Extended 63FBGA KFG1216U2A-DIB6 3.3V(2.7V~3.6V) Industrial

256Kx72

Abstract: EP-3 ae2a
Contextual Info: Preliminary 256Kx72 Double Late Write SigmaRAMTM K7N167285A 256Kx72-Bit Pipelined SigmaRAMTM FEATURES GENERAL DESCRIPTION • Double Late Write mode , Pipelined Read mode. • 1.8V+150/-100 mV Power Supply. • 1.8V I/O supply. • Byte Writable Function.