1.4470 Search Results

130001 power transistor

Abstract: fet D412 D400 npn transistor q406 transistor C495 transistor FBL-00 q902 transistor TRANSISTOR D412 1L400 TRANSISTOR D400
Contextual Info: Pi Factors Report Page 1 of 63 SortBy: PartType/PN/RefDes Date: 4/5/2007 2:00 PM RelCalc for Windows, Version 5.0-BELL6 Release 2000.1 Company: Lambda Americas DOC: LZSA1000.CIR RECORDS: 321 DESCRIPTION: LZSA1000 ENV: GB TEMP: 40.00 C CF: 1.00000 MODEL: Serial

Contextual Info: Part Number: SP485EMN-L Package: 8L NSOIC Material Declaration Statement of Materials, Construction Component Material Material Weight % Name Weight mg Element/Compound CAS No. 1 2 Die Die Attach 2.8000 0.2831 3 Leadframe 38.9685

Contextual Info: Part Number: SP3496EEN-L Package: 8L NSOIC Material Declaration Statement of Materials, Construction Component Material Material Weight % Name Weight mg Element/Compound CAS No. 1 2 Die Die Attach 2.7700 0.2831 3 Leadframe 38.9685

Contextual Info: Product: LP2951CS-L‐5‐0 Package: 8L NSOIC Material Declaration Statement of Materials, Construction Component Material Material Weight % Name Weight mg Element/Compound CAS No. 1 2 Die Die Attach 2.8000 0.2831 3 Leadframe

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Abstract: chebyshev 3904 diode b6 k 450 1310-LP KX-1180
Contextual Info: CHAPTER 20 Chebyshev Filters Chebyshev filters are used to separate one band of frequencies from another. Although they cannot match the performance of the windowed-sinc filter, they are more than adequate for many applications. The primary attribute of Chebyshev filters is their speed, typically more than an

si7326

Abstract: 1.3816 1.4470 7313 57461 AN609 Si7326DN
Contextual Info: Si7326DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].