1.4419 Search Results

74269

Abstract: AN609 Si5485DU
Contextual Info: Si5485DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

ADN2812

Abstract: AN-632 GR-253-CORE
Contextual Info: Continuous Rate 12.3 Mb/s to 2.7 Gb/s Clock and Data Recovery IC with Integrated Limiting Amp ADN2812 FEATURES PRODUCT DESCRIPTION Serial data input: 12.3 Mb/s to 2.7 Gb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Quantizer sensitivity: 6 mV typical

Contextual Info: Continuous Rate 12.3 Mb/s to 2.7 Gb/s Clock and Data Recovery IC with Integrated Limiting Amp ADN2812 Data Sheet FEATURES GENERAL DESCRIPTION Serial data input: 12.3 Mb/s to 2.7 Gb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Quantizer sensitivity: 6 mV typical

X band 5-bit phase shifter

Abstract: ADN2812 AN-632 GR-253-CORE Fiber Optic regenerator 28 ad2812
Contextual Info: Continuous Rate 12.3 Mb/s to 2.7 Gb/s Clock and Data Recovery IC with Integrated Limiting Amp ADN2812 FEATURES GENERAL DESCRIPTION Serial data input: 12.3 Mb/s to 2.7 Gb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Quantizer sensitivity: 6 mV typical

16-2-222

Abstract: 0745 AN609 150074 70386 1.4567
Contextual Info: Si5490DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

ADN2812

Abstract: AN-632 GR-253-CORE
Contextual Info: Continuous Rate 12.3 Mb/s to 2.7 Gb/s Clock and Data Recovery IC with Integrated Limiting Amp ADN2812 FEATURES GENERAL DESCRIPTION Serial data input: 12.3 Mb/s to 2.7 Gb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Quantizer sensitivity: 6 mV typical

1.4419

Abstract: Si5480DU AN609 150074
Contextual Info: Si5480DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

32-LFCSP

Abstract: ADN2812 AN632 GR-253-CORE
Contextual Info: Continuous Rate 10 Mb/s to 2.7 Gb/s Clock and Data Recovery IC with Integrated Limiting Amp ADN2812 Preliminary Technical Data FEATURES PRODUCT DESCRIPTION Serial data input: 10 Mb/s to 2.7 Gb/s Exceeds SONET requirements for jitter transfer / generation / tolerance

d0422

Abstract: 5802e ADN2812 AN-632 GR-253-CORE 18896
Contextual Info: Continuous Rate 12.3 Mb/s to 2.7 Gb/s Clock and Data Recovery IC with Integrated Limiting Amp ADN2812 FEATURES GENERAL DESCRIPTION Serial data input: 12.3 Mb/s to 2.7 Gb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Quantizer sensitivity: 6 mV typical

ad2817

Abstract: 56-LFCSP ADN2812 ADN2865 GR-253-CORE fiber optic schematic symbols 18896
Contextual Info: Continuous Rate 12.3Mb/s to 2.7Gb/s Clock and Data Recovery IC w/Loop Timed SERDES ADN2865 Preliminary Technical Data FEATURES PRODUCT DESCRIPTION Serial data input: 12.3 Mb/s to 2.7 Gb/s Exceeds ITU-T Jitter Specifications Integrated Limiting Amp: 6mV sensitivity

transistor c 4793

Abstract: mosfet 4684 4793 1.4419 4419 4684 MOSFET AN609 Si5484DU
Contextual Info: Si5484DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

d0422

Contextual Info: Continuous Rate 12.3 Mb/s to 2.7 Gb/s Clock and Data Recovery IC with Integrated Limiting Amp ADN2812 Data Sheet FEATURES GENERAL DESCRIPTION Serial data input: 12.3 Mb/s to 2.7 Gb/s Exceeds SONET requirements for jitter transfer/ generation/tolerance Quantizer sensitivity: 6 mV typical

1.4419

Abstract: 74268 0745 AN609 Si5486DU 150074
Contextual Info: Si5486DU_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

ad2817

Abstract: ADN2812 ADN2817 GR-253-CORE
Contextual Info: Continuous Rate 12.3Mb/s to 2.7Gb/s Clock and Data Recovery ICs ADN2817/ADN2818 Preliminary Technical Data FEATURES PRODUCT DESCRIPTION Serial data input: 12.3 Mb/s to 2.7 Gb/s Exceeds ITU-T Jitter Specifications Integrated Limiting Amp: 6mV sensitivity ADN2817 only