1.27 PAD LAYOUT Search Results

208H

Contextual Info: 1. M echanical Dimensions: 2. S chem afic: 2.54 5X0.71 — 1.27 r - 2 .5 4 1.27 a r-0 d x -i I i I □ un o r □ □ m ca -H □ A 5UGGE5TED PAD LAYOUT 3.81 ± 0.38 3. Electrical S pecifications: Im pedance Ratio: 1.5:1 ± 2 % Turns Ratio: 1.22:1 ± 2 % Bandwidth: 1-1000M H z 1.0dB Typ

Contextual Info: *R oH S CO M PL IA NT Features • 1.27 mm pitch ■ RoHS compliant* - see processing ■ Precious metal contacts information on RoHS compliant modular contacts ■ For applications/processing guidelines, click here ■ Twin hot contacts symmetrical pad layout

Contextual Info: *R oH S CO M PL IA NT Features • 1.27 mm pitch ■ RoHS compliant* - see processing ■ Precious metal contacts information on RoHS compliant modular contacts ■ For applications/processing guidelines, click here ■ Twin hot contacts symmetrical pad layout

Contextual Info: *R oH S CO M PL IA NT Features • 1.27 mm pitch ■ RoHS compliant* - see processing ■ Precious metal contacts information on RoHS compliant modular contacts ■ For applications/processing guidelines, click here ■ Twin hot contacts symmetrical pad layout

Contextual Info: *R oH S CO M PL IA NT Features • 1.27 mm pitch ■ RoHS compliant* - see processing ■ Precious metal contacts information on RoHS compliant modular contacts ■ For applications/processing guidelines, click here ■ Twin hot contacts symmetrical pad layout

Contextual Info: PL IA NT Features CO M • 1.27 mm pitch ■ For applications/processing guidelines, click here *R oH S ■ Precious metal contacts ■ Twin hot contacts symmetrical pad layout ■ Pick & place compatible ■ High cycle life ■ RoHS compliant* - see processing

Contextual Info: PL IA NT Features • For applications/processing CO M ■ 1.27 mm pitch guidelines, click here *R oH S ■ Precious metal contacts ■ Twin hot contacts symmetrical pad layout ■ Pick & place compatible ■ High cycle life ■ RoHS compliant* - see processing

Contextual Info: PL IA N T Features • RoHS compliant* - see processing CO M ■ 1.27 mm pitch *R oH S ■ Precious metal contacts ■ Twin hot contacts symmetrical pad layout ■ Pick & place compatible ■ High cycle life information FOR RoHS compliant modular contacts

70AB

Contextual Info: PL IA NT Features Applications *R oH S CO M 1.27 mm pitch 3 to 4 precious metal contacts Twin hot contacts symmetrical pad layout Pick & place compatible High cycle life RoHS compliant* - see processing information on lead free modular contacts Handheld communications - mobile

Contextual Info: PL IA NT Features CO M • 1.27 mm pitch ■ For applications/processing guidelines, click here *R oH S ■ Precious metal contacts ■ Twin hot contacts symmetrical pad layout ■ Pick & place compatible ■ High cycle life ■ RoHS compliant* - see processing

Contextual Info: SL22 and SL23 Low VF Surface Mount Schottky Rectifier DO-214AA SMB 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.180 (4.57) 0.160 (4.06) t c u rod P New Mounting Pad Layout 0.050 MIN (1.27 MIN) Dimensions in inches and (millimeters) 0.060 (1.52) 0.030 (0.76)

Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ ■ ■ ■ Applications 1.27 mm pitch 3 to 4 precious metal contacts Twin hot contacts symmetrical pad layout Pick & place compatible High cycle life RoHS compliant* - see processing information on lead free modular contacts

Contextual Info: PL IA NT Features CO M • *R oH S ■ ■ ■ ■ ■ Applications 1.27 mm pitch 3 to 4 precious metal contacts Twin hot contacts symmetrical pad layout Pick & place compatible High cycle life RoHS compliant* Handheld communications - mobile phones, pagers, cordless phones, GPS,

Contextual Info: .120 MAX. [3.05] .050 [1.27] .115 MAX. [2.92] .175 MAX [4.45] .190 MAX. [4.83] .260 MAX [6.60] T DENOTES INDUCTANCE VALUE AREA REPRESENTS TERMINAL PAD DIMENSIONS .055 2 7 [1.40] ELECTRICAL SPECIFICATIONS 25°C unless otherwise noted: MIDCOM PART NUMBER

Contextual Info: 1. M e c h a n i c a l D im e n s i o n s : S ch e m atic: 2. Sac Z .54 1.27 5X0.71 r - 2 . 54 - - 1-0 O cm m CD -H ct> rO A -O 6 3 -O 4 m QO □ : 1 o- 1.27 |— I □ □ □ iO P ri o- SUGGESTED PAD LAYOUT "3 .a i± 0 .3 8 3. E l e c t r i c a l S p e c i f i c a t i o n s :

ria SMD

Contextual Info: 1. Mechanical Dimensions: 2. Schem atic: Z.54 Pri 1.27 5X0.71 r S ec 4 o- -O 3 6 o- -O 1 □n □ m -h SUGGESTED PAD LAYOUT 3.81 ± 0 .3 8 3. Electrical Im p e d a n c e S pecifications: R a tio : 1:1 ±2% Turns Ratio: 1:1 ±2% Frequency: 8 0 0 - 1 900MHz

Contextual Info: GF4936 Dual N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 37mΩ ID 5.8A H C N t E ET c u R T NF rod P GE SO-8 New TM S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02)

Contextual Info: GF9926 Dual N-Channel Enhancement-Mode MOSFET Low VGS th VDS 20V RDS(ON) 30mΩ ID 6.0A H C N t E ET c u R T NF rod P GE SO-8 New TM S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27)

Contextual Info: GF4435 P-Channel Enhancement-Mode MOSFET H C N t E ET c R u d T NF ro P E G SO-8 New VDS –30V RDS ON 20mΩ ID –8.0A TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02)

Contextual Info: GF9926 Dual N-Channel Enhancement-Mode MOSFET Low VGS th VDS 20V RDS(ON) 30mΩ ID 6.0A H C N t E ET c u R T NF rod P GE SO-8 New TM 0.197 (5.00) 0.189 (4.80) S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27)

Contextual Info: GF2918 Dual N-Channel Enhancement-Mode MOSFET Low VGS th VDS 30V RDS(ON) 18mΩ ID 7.8A H C N t E ET c u R T NF rod P GE SO-8 New TM 0.197 (5.00) 0.189 (4.80) S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27)

Contextual Info: GF4420 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 9mΩ ID 12.5A H C N t E ET c u R T NF rod P GE New TM SO-8 0.197 (5.00) 0.189 (4.80) S 1 8 D S 2 7 D S 3 6 D G 4 5 D Mounting Pad Layout 5 8 0.05 (1.27) 0.04 (1.02) 0.157 (3.99) 0.150 (3.81) 0.244 (6.20)

Contextual Info: GF4410 N-Channel Enhancement-Mode MOSFET H C N t E ET c R u d T NF ro P E G SO-8 New VDS 30V RDS ON 13.5mΩ ID 10A TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 5 8 0.157 (3.99) 0.150 (3.81) 0.05 (1.27) 0.04 (1.02) Dimensions in inches

Contextual Info: GF2208 N-Channel Enhancement-Mode MOSFET VDS 30V RDS ON 8mΩ ID 13A H C N ct E ET u R d T NF w Pro Ne GE TM S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO-8 0.197 (5.00) 0.189 (4.80) Mounting Pad Layout 8 5 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 1 0.05 (1.27)