HCCC120R080H1
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VANGUARD
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1200V/37A N-Channel Advanced Power MOSFET with 80 mΩ RDS(on) at VGS=20V, TO-263-7L package, designed for high-voltage power applications featuring low on-resistance and high-speed switching. |
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HCCW120R080H1
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VANGUARD
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1200V/80mΩ N-Channel SiC Power MOSFET in TO-247 package with 36A continuous drain current, 80 mΩ typical RDS(on) at 25°C, and high-speed switching capability. |
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HCCZ120R040H1
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VANGUARD
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1200V/55A N-Channel SiC MOSFET with 42mΩ RDS(on) at VGS=20V, TO-247-4L package, designed for high-speed switching, featuring low gate charge, low output capacitance, and avalanche capability. |
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NCES120R062T4
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NCEPOWER
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1200V, 26A N-channel SiC power MOSFET in a TO-247-4L package with low on-resistance, fast switching speed, and a driver source terminal for enhanced performance. |
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HCCW120R040H1
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VANGUARD
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1200V/55A N-Channel Advanced Power MOSFET with 42 mΩ RDS(on) at VGS=20V, TO-247 package, designed for high-voltage power applications with low on-resistance and fast switching capabilities. |
Original |
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NCES120R018T4
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NCEPOWER
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1200V, 81A N-channel SiC power MOSFET in TO-247-4L package with low on-resistance, fast switching speed, and Pb-free lead plating; designed for high-efficiency applications requiring minimal power loss. |
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HCCZ120R080H1
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VANGUARD
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1200V/80mΩ N-Channel SiC Power MOSFET in TO-247-4L package with 36A continuous drain current, 80 mΩ typical on-resistance at 25°C, and high-speed switching capability. |
Original |
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NCES120R036T4
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NCEPOWER
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1200V, 50A N-channel SiC power MOSFET with a 4-pin TO-247-4L package, featuring low on-resistance of 36 mΩ at VGS = 18V, fast switching speed, and Pb-free lead plating compliant to RoHS. |
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HCCC120R080H1
