1 OHM RESISTOR 500 WATT DATASHEET Search Results

Contextual Info: Aluminium Enclosed Resistor Type CJT Series Key Features • Modular versions available ■ Environmental protection to IP54 ■ Up to 2000W power rating ■ Aluminium enclosure ■ Vibration resistant Applications ■ Power supplies ■ Inverters ■ Servo systems

transistor SMD 352a

Abstract: smd 352A capacitor 6kv 22j ge 205a 0201 footprint RW67V 12w SOT 23 package marking code SPECIFICATION OF SCR 207A CC21AA-D22W-OFA 353A
Contextual Info: POWER RESISTORS CURRENT SENSE HIGH VOLTAGE HIGH ENERGY HEAT SINKABLE SURFACE MOUNT COMPONENT SELECTOR 4000G Revised January 8, 2009 1600 Golf Road, Suite 850 | Rolling Meadows, IL 60008 Phone: 866-964-6483 Fax: 847-574-7522 ohmite.com email: sales@ohmite.com

Contextual Info: FP31QF 2 – Watt HFET Product Information Applications • RFID: HF, UHF, microwave • Readers Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth Test Frequency Small Signal Gain Maximum Stable Gain

Contextual Info: FP31QF 2 – Watt HFET Product Information • RFID: HF, UHF, microwave • Readers • • • Industrial Portable Handheld Units Min Typ Saturated Drain Current, I dss Transconductance, Gm Pinch Off Voltage, Vp 1 Thermal Resistance Junction Temperature (2)

transistor SMD 352a

Abstract: capacitor 33j 6kv 12w SOT 23 package marking code smd transistor marking 12W 33J 6KV smd 352A 25 ohm 3 watt rheostat United Chemi-Con SME series United Chemi-Con KMC capacitor 6kv 22j
Contextual Info: POWER RESISTORS CURRENT SENSE HIGH VOLTAGE HIGH ENERGY HEAT SINKABLE SURFACE MOUNT COMPONENT SELECTOR 4000G Revised July 16, 2010 1600 Golf Road, Suite 850 | Rolling Meadows, IL 60008 Phone: 866-964-6483 Fax: 847-574-7522 ohmite.com email: sales@ohmite.com

QFN-6x6 48

Abstract: FP31QF-F RF 4*4 mm QFN power amplifier ISM 900 MHz matched transistors transistor C1000 QFN-6x6 rohm
Contextual Info: FP31QF 2 – Watt HFET Product Information • • • • • • Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless Saturated Drain Current, Idss Transconductance, Gm Pinch Off Voltage, Vp 1 RF Parameter (2) Operational Bandwidth

OPTO 22 model p240d2

Abstract: transformer 9-0-9 relay 12 volt tip 1200 1 amps 100 Amp current 1000 volt diode 480V motor operated valve scr 300 amps model 380D25 P240D4 12 volt 10 amp relay
Contextual Info: SOLID-STATE RELAYS DATA SHEET page 1/12 Form 859-990514 Overview In 1974, Opto 22 introduced the first liquid epoxy-filled line of power solid-state relays SSR . This innovation in SSR design greatly improved the reliability and reduced the cost of manufacturing. At that time, we also incorporated

FP1189

Abstract: 8893 application diagram
Contextual Info: FP1189 ½ - Watt HFET Product Information Product Features • • • • • • • • Product Description 50 – 4000 MHz ISO & EPC compliant +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package

FP11G

Abstract: 113 marking code transistor ROHM FP1189 FP1189-G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S
Contextual Info: FP1189 ½ - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain

Contextual Info: FP1189 ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years The FP1189 is a high performance ½-Watt HFET

FP11G

Abstract: fp1189-g rfid reader id-20 FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S TRANSISTOR BC 206 PNP
Contextual Info: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET

FP1189-G

Abstract: FP11G FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S marking c7 sot-89
Contextual Info: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package

MARKING S0 sot89

Abstract: bc 3843 sot-89 marking dn
Contextual Info: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features x x x x x x 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Functional Diagram

FP11G

Abstract: TRANSISTOR BC 158 pnp WJ transistor bc 206 transistor bc 3843
Contextual Info: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET

marking 08 sot89

Abstract: SOT89 MARKING CODE 8G
Contextual Info: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features x x x x x x 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package x MTTF >100 Years Functional Diagram

WJ 3

Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years

Fp2189

Contextual Info: FP2189 1 - Watt HFET Product Information Product Features • • • • • • • • 50 – 4000 MHz ISO & EPC compliant +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz MTTF >100 Years SOT-89 SMT Package Functional Diagram

d 2507

Abstract: transistor P1 P
Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years

RFID ID-20

Abstract: 113 marking code transistor ROHM HFET sot-89 MARKING CODE ab FP1189-PCB2140S FP1189-PCB900S JESD22-A114 FP1189 FP1189-PCB1900S 25c021
Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm

RFID ID-20

Abstract: marking c7 sot-89 113 marking code transistor ROHM FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S JESD22-A114 30ACPR ohm resistor 1 W 100 ROhm
Contextual Info: FP1189 The Communications Edge TM ½-Watt HFET Product Information Product Description Functional Diagram The FP1189 is a high performance ½-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm

wire wound resistor

Abstract: "wire wound resistor" resistor 1r0
Contextual Info: High Power Wire Wound Resistor Type TE Series Key Features • Mullite Coated ■ Up to 2500W Power Rating ■ Corrugated Ribbon Element for Rapid Cooling ■ 3x Overload for 5 Seconds ■ Custom Terminations / Leads Available ■ Flameproof Construction Applications

104k capacitor

Contextual Info: Type 298P, Orange Drop , R-C Network Arc Suppressors Type 298P Orange Drop® R-C Network 330 Volts A-C Features • Designed for arc suppression, snubber and line frequency applications. • Low cost, single low-profile package, Radial-lead. • High A-C voltage polyester film/foil

AH215-S8

Abstract: ECP100D ECP100D-G ECP100D-PCB1960 ECP100D-PCB2140 ECP100D-PCB900
Contextual Info: ECP100D 1 Watt, High Linearity InGaP HBT Amplifier • +46 dBm Output IP3 • Single Positive Supply +5V • Lead-free/green/RoHS-compliant 16pin 4mm QFN package Applications • Final stage amplifiers for Repeaters • Mobile Infrastructure • Defense / Homeland Security

Contextual Info: ECP100D 1 Watt, High Linearity InGaP HBT Amplifier • +46 dBm Output IP3 • Single Positive Supply +5V • Lead-free/green/RoHS-compliant 16pin 4mm QFN package Applications • Final stage amplifiers for Repeaters • Mobile Infrastructure • Defense / Homeland Security