1 MBIT X 4 RAM Search Results

LC324256BP

Contextual Info: Memory monolithic ICs 4 Mbit CMOS dynamic RAMs Package Device Type Humber of Drawing pins and j ; number configuration : Description Features LC324100AJ'' SOJ 26 3145A 4 Mbit (4 194 304 X 1j CMOS dynamic RAM LC324100AZV ZIP 20 3144A 4 Mbit (4 194 304 X 1) CMOS dynamic RAM

LC324256BP

Abstract: 3145A LC324100AJLV package zip-20 DYNAMIC RAM LC324256AJL RAM200
Contextual Info: Memory monolithic ICs 4 Mbit CMOS dynamic RAMs Package Type Number of pins and configuration LC324100AJV SOJ 26 3145A 4 Mbit (4 194 304 X 1) CMOS dynamic RAM 60, 70, 80 ns access time, high-speed page mode LC324100AZ’ ZIP 20 3144 A 4 Mbit (4 194 304 X 1) CMOS dynamic RAM

numonyx

Abstract: M36W0R604BT1 M36W0R604 M58WR064HTB PSRAM JESD97 M36W0R6040T1 M69AR024B 8810h 8811h
Contextual Info: M36W0R6040T1 M36W0R604BT1 64 Mbit 4 Mb x16, Multiple Bank, Burst Flash memory and 16 Mbit (1 Mb ×16) PSRAM, multi-chip package Features • Multi-chip package – 1 die of 64 Mbit (4 Mb x 16) Flash memory – 1 die of 16 Mbit (1 Mb x 16) Pseudo SRAM ■

M36W0R5040

Abstract: M36W0R5040T7 M69KB024AB M36W0R6040T7 M58WR032KT M36W0R5030T7 Numonyx MCP
Contextual Info: M36W0Rx0x0x7 32- or 64-Mbit 2 or 4 Mbits x 16, multiple bank, burst flash memory and 8-Mbit (512 Kbit x16) or 16-Mbit (1 Mbit x 16) PSRAM MCP Features „ Multichip package – 1 die of 32 or 64 Mbits (2 or 4 Mbits x 16) flash memory – 1 die of 8 Mbits (512 Kbits x 16) or 16 Mbits

Contextual Info: M65KA128AE 128 Mbit 4 Banks x 2 Mbit x 16 1.8 V Supply, Low Power SDRAM Features summary • 128 Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2 Mwords, each 16 bits wide ■ Synchronous Burst Read and Write – Fixed burst lengths: 1, 2, 4, 8 words or Full

M65KA128AE

Contextual Info: M65KA128AE 128 Mbit 4 Banks x 2 Mbit x 16 1.8 V Supply, Low Power SDRAM Features summary • 128 Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 2 Mwords, each 16 bits wide ■ Synchronous Burst Read and Write – Fixed burst lengths: 1, 2, 4, 8 words or Full

m36w0r6050u

Abstract: m36w0r6040u M36W0R5040 M36W0R5040u M36W0R6050U4 M36W0R6040U4 M69KM024A ADQ14 M69KM048A ADQ15
Contextual Info: M36W0Rx0x0UL4 32- or 64-Mbit mux I/O, multiple bank, multilevel, burst flash memory, 16- or 32-Mbit PSRAM, 1.8 V supply MCP Features • ■ ■ Multichip package – 1 die of 32 Mbit (2 Mbit x 16) or 64 Mbit (4 Mbit x 16) mux I/O multiple bank, multilevel, burst) flash memory

J-STD-020B

Abstract: M36W0R5020B0 M36W0R5020T0 m36w0r5
Contextual Info: M36W0R5020T0 M36W0R5020B0 32 Mbit 2Mb x16, Multiple Bank, Burst Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 32 Mbit (2Mb x 16) Flash Memory – 1 die of 4 Mbit (256Kb x16) SRAM • SUPPLY VOLTAGE

rpa15

Contextual Info: M36W0R5020T0 M36W0R5020B0 32 Mbit 2Mb x16, Multiple Bank, Burst Flash Memory and 4 Mbit SRAM, 1.8V Supply Multi-Chip Package FEATURES SUMMARY MULTI-CHIP PACKAGE – 1 die of 32 Mbit (2Mb x 16) Flash Memory – 1 die of 4 Mbit (256Kb x16) SRAM • SUPPLY VOLTAGE

CYD01S36V

Abstract: CYD02S36V CYD04S36V CYD09S36V CYD18S36V
Contextual Info: CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access of the same memory location The FLEx36 family includes 1-Mbit, 2-Mbit, 4-Mbit, 9-Mbit and

Contextual Info: CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V PRELIMINARY FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access of the same memory location The FLEx36 family includes 1-Mbit, 2-Mbit, 4-Mbit, 9-Mbit and

CYD01S36V

Abstract: CYD02S36V CYD04S36V CYD09S36V CYD18S36V 1.0mm pitch BGA
Contextual Info: CYD01S36V CYD02S36V/CYD04S36V CYD09S36V/CYD18S36V PRELIMINARY FLEx36TM 3.3V 32K/64K/128K/256K/512 x 36 Synchronous Dual-Port RAM Features Functional Description • True dual-ported memory cells that allow simultaneous access of the same memory location The FLEx36 family includes 1-Mbit, 2-Mbit, 4-Mbit, 9-Mbit and

AE920

Contextual Info: Preliminary a Advanced Micro Devices Am29C676 11-Bit DRAM Driver DISTINCTIVE CHARACTERISTICS • Ideal for driving the eleven address lines of 4 Mbit x 1 and 4 Mbit x 4 DRAMs Minimized output-to-output skews reduce memory access time ■ Capable of driving multiple RAS, CAS and WE

Contextual Info: Preliminary a Advanced Micro Devices Am29C676 11-Bit DRAM Driver DISTINCTIVE CHARACTERISTICS • Ideal for driving the eleven address lines of 4 Mbit x 1 and 4 Mbit x 4 DRAMs Minimized output-to-output skews reduce memory access time ■ Capable of driving multiple RAS, CAS and WE

Contextual Info: HB56D136B Series 1,048,576-Word x 36-Bit High Density Dynamic RAM Module I • DESCRIPTION PIN OUT The HB56D136B is a 1M x 36 dynamic RAM module, mounted 8 pieces of 4 Mbit DRAM HM514400JP sealed in SOJ package and 4 pieces of 1 Mbit DRAM (HM511000AJP) sealed in SOJ package. An outline of the

Contextual Info: HB56G19 Series 1,048,576-Word x 9-Bit High Density Dynamic RAM Module • DESCRIPTION ■ PIN OUT The HB56G19 is a 1M x 9 dynamic RAM module, mount­ ed two 4 Mbit DRAM HM514400AS sealed in SOJ package and 1 Mbit DRAM (HM511000AJP) sealed in SOJ package.

Contextual Info: Preliminary & Advanced Micro Devices Am29C676 11-Bit DRAM Driver DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ ■ Ideal for driving the eleven address lines of 4 Mbit x 1 and 4 Mbit x 4 DRAMs Capable of driving multiple RAS, CAS and WE control lines Drive capability from 50 pF through 500 pF with

Contextual Info: HB56D136 Series 1,048,576-word x 36-bit High Density Dynamic RAM Module HITACHI Description The HB56D136 is a 1-M x 36-bit dynamic RAM module, mounted 8 pieces of 4 Mbit DRAM HM514400CS/CLS sealed in SOJ package and 2 pieces of 2 Mbit DRAM (HM512200BS/BLS) sealed in

HM511000J

Contextual Info: • 44C,b2D3 nonni =i2s «hits HB56D236B S eries 2,097,152-Word x 36-Bit High Density Dynamic RAM Module ■ DESCRIPTION The HB56D236B is a 2M x 36 dynamic RAM module, mounted 16 pieces of 4 Mbit DRAM HM514400JP sealed in SOJ package and 8 pieces of 1 Mbit DRAM

TFBGA105

Abstract: M39P0R9070E0 M58PR512J M65KA128AL
Contextual Info: M39P0R9070E0 512 Mbit x16, Multiple Bank, Multi-Level, Burst Flash Memory 128 Mbit Low Power SDRAM, 1.8V Supply, Multi-Chip Package Feature summary • Multi-Chip Package – 1die of 512 Mbit (32Mb x 16, Multiple Bank, Multi-Level, Burst) Flash memory – 1 die of 128 Mbit (4 Banks of 2Mb x16) Low

HM534253-10

Contextual Info: HM534253 Series 262144-Word x — Prelim inary 4-Bit Multiport CMOS Video RAM The HM534253 is a 1-Mbit multiport video RAM equipped with a 256-kword x 4-bit dynamic RAM and a 512-word x 4-bit SAM serial Pin Arrangement HM534253JP Series SC1 1 SI/OO « 2 S I/0 1 1 3

Contextual Info: HM534253A S eries- Preliminary 262,144-Word x 4-Bit Multiport CMOS Video RAM • DESCRIPTION The HM534253A is a 1-Mbit multiport video RAM equipped with a 256k-word x 4-bit dynamic RAM and a 512-word x 4-bit SAM serial access memory . Its RAM

Contextual Info: ISSI' IS 4 2 S 1 6 1 2 8 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION SEPTEMBER 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.

Contextual Info: HWD52L1664 1 Meg Bits x 16 Bits x 4 Banks 64-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES OVERVIEW • Clock frequency: 166, 133, 100 MHz DRAM HWD52L1664 is organized as 1,048,576 bits x 16-bit x 4-bank for improved performance. The synchronous DRAMs achieve high-speed