1 K RESISTOR Search Results

UNR1110

Abstract: UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119
Contextual Info: Transistors with built-in Resistor UNR111x Series UN111x Series Silicon PNP epitaxial planar transistor Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ

UNR1210

Abstract: UNR1211 UNR1212 UNR1213 UNR1214 UNR1215 UNR1216 UNR1217 UNR1218 UNR1219
Contextual Info: Transistors with built-in Resistor UNR121x Series UN121x Series Silicon NPN epitaxial planar type Unit: mm For digital circuits 2.5±0.1 (1.0) R 0.9 R 0.7 0.55±0.1 (R1) 47 kΩ 10 kΩ 22 kΩ 47 kΩ 10 kΩ 10 kΩ 4.7 kΩ 22 kΩ 0.51 kΩ 1 kΩ 47 kΩ

CY7C136E-55NXC

Abstract: CY7C131E-55 cy7c136e CY7C131E-15NXI CY7C136AE-55NXI
Contextual Info: CY7C131E, CY7C131AE CY7C136E, CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization

TM170A

Abstract: p36a AN12 AN14 MN1020017 MN1021617 p46a P62J p33a
Contextual Info: □ MN1021617 / F1617 / 0017 / 0817 M N 1021617 / F1617 under developm ent / 0 0 1 7 (under developm ent) / 08 17 (under developm ent) 1 Type I ROM (xS-bit) 12 8 K /1 2 8 K (Flash) / OK / 64K • RAM (x8-bit) 4 K /4 K /4 K /3 K 1 Minimum Instruction Execution Time

CY7C136E

Abstract: CY7C131AE-15JXI CY7C136AE-55NXI
Contextual Info: CY7C131E, CY7C131AE CY7C136E, CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization

CY7C136E

Contextual Info: CY7C131E, CY7C131AE CY7C136E, CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Functional Description Features • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization

CY7C136E

Contextual Info: CY7C131E/CY7C131AE CY7C136E/CY7C136AE 1 K / 2 K x 8 Dual-port Static RAM 1 K / 2 K × 8 Dual-port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K / 2 K × 8 organization

LQFP080-P-1414A

Abstract: MN101C28A MN101CP28DBF QFP084-P-1818E
Contextual Info: □ MN101C28A / 28C / 28D / 28F / 28L MN101C28A / 28C / 28D / 28F / 28L 1 Type 1 ROM x8-Bit 32 K / 48 K / 64 K / 96 K / 96 K (External memory can be expanded) 1 RAM (x8-Bit) 1 536/2 048 / 2 048 / 4 096 /10 240 (External memory can be expanded) 1 Minimum Instruction Execution Time

AD5293

Abstract: ADR512 pin configuration 20K potentiometer 2N7002 AD8512 OP1177 OP42 7408 ic truth table
Contextual Info: Single-Channel, 1024-Position, 1% R-Tolerance Digital Potentiometer AD5293 FEATURES FUNCTIONAL BLOCK DIAGRAM VDD Single-channel, 1024-position resolution 20 kΩ, 50 kΩ, and 100 kΩ nominal resistance Calibrated 1% nominal resistor tolerance resistor performance mode

ad5293

Abstract: Audio Volume Control IC AND GATE 7408 specification sheet ADR512
Contextual Info: Single-Channel, 1024-Position, 1% R-Tolerance Digital Potentiometer AD5293 FEATURES FUNCTIONAL BLOCK DIAGRAM VDD Single-channel, 1024-position resolution 20 kΩ, 50 kΩ, and 100 kΩ nominal resistance Calibrated 1% nominal resistor tolerance resistor performance mode

ADR512

Contextual Info: Single-Channel, 1024-Position, 1% R-Tolerance Digital Potentiometer AD5293 FUNCTIONAL BLOCK DIAGRAM FEATURES VDD Single-channel, 1024-position resolution 20 kΩ, 50 kΩ, and 100 kΩ nominal resistance Calibrated 1% nominal resistor tolerance resistor performance mode

Contextual Info: Preliminary Technical Data Single Channel, 1% Resistor tolerance, 1024/256-Position Digital Variable Resistor AD5272/AD5274 FEATURES Single-channel, 1,024/256-position resolution 20 kΩ, 50 kΩ and 100 kΩ nominal resistance Calibrated 1% Nominal Resistor Tolerance

ad5293

Abstract: ADR512 AD5293BRUZ 2N7002 AD8512 OP1177 OP42 Rheostat 20K IC AND GATE 7408 specification sheet
Contextual Info: Single-Channel, 1024-Position, 1% R-Tolerance Digital Potentiometer AD5293 FEATURES FUNCTIONAL BLOCK DIAGRAM VDD Single-channel, 1024-position resolution 20 kΩ, 50 kΩ, and 100 kΩ nominal resistance Calibrated 1% nominal resistor tolerance resistor performance mode

resistor 330 ohm

Abstract: resistor 330 Ohm DATA SHEET resistor fm variable capacitor fm transmitter resistor 4.7 k 2N3904 transistor data sheet free download capacitor 0.1 k 100 FM MICROPHONE variable resistor
Contextual Info: FM Transmitter - Sensitive 1 av 1 . FM Transmitter - Sensitive . Parts List: Component: Value: Datasheet: Qty: Resistor 10 K Not Available 02 Resistor 100 K Not Available 01 Resistor 4.7 K Not Available 01

ad5293

Contextual Info: Single Channel, 1024-Position, 1% R-Tol, Digital Potentiometer AD5293 Preliminary Technical Data FEATURES Single-channel, 1024-position resolution 20 kΩ, 50 kΩ and 100 kΩ nominal resistance Calibrated 1% Nominal Resistor Tolerance Rheostat mode temperature coefficient: 35 ppm/°C

Contextual Info: Preliminary Technical Data Single Channel, 1% Resistor tolerance, 1024/256-Position Digital Variable Resistor AD5270/AD5271 FEATURES FUNCTIONAL BLOCK DIAGRAM Single-channel, 1,024/256-position resolution 20 kΩ, 50 kΩ and 100 kΩ nominal resistance Calibrated 1% Nominal Resistor Tolerance

Contextual Info: M93C86, M93C76, M93C66 M93C56, M93C46, M93C06 16 K/8 K/4 K/2 K/1 K/256 x8/x16 Serial Microwire Bus EEPROM PRELIMINARY DATA • INDUSTRY STANDARD MICROWIRE BUS ■ 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: by WORD (x 1 6 )o rb y

B130DI

Abstract: bq2954 resistor 1k 20W ELJ-FA100KF2 FZT789ACT BD12954 thermistor 103AT ntc 01UF 100UF 47UF
Contextual Info: Designed ttoo GO Designed GO . . . Practical and Cost-Effective Battery Management Design Examples by Benchmarq Series 2954, Number 1 20W Miniature Dual-Stage Fast Lithium-Ion Charger Using bq2954 Features K K K K K K K K K K Circuit board only 1.4 x 0.9” 35 x 24mm

R075

Abstract: R056 R68 resistor kf 202 transistor YAGEO TYPE CR KT 210 R30-R33 470R 680R kc series vitrohm resistors
Contextual Info: Series KC, KH, KV, KT, KF Temperature coefficient of the resistive wire for wirewound resistors P70 Type TC +400 ±50 ppm K-1 TC +0 ±40 ppm K-1 TC +0 ±10 ppm K-1 1W 200 R056 - R20 R22 - 300R 330R - 9K1 2W 202 R075 - R43 R47 - 620R 680R - 20K 4W 206 R056 - R20

YAGEO TYPE CR

Abstract: Yageo 680R Vitrohm resistors R-62
Contextual Info: Series KP Temperature coefficient of the resistive wire for wirewound resistors P70 Type TC +400 ±50 ppm K-1 TC +0 ±40 ppm K-1 TC +0 ±10 ppm K-1 2W 290 R10 - R27 R30 - 510R 560R - 7K5 4W 292 R15 - R56 R62 - 620R 680R - 11K 5W 294 R27 - R62 R68 - 1K1 1K2 - 20K

AN1064

Abstract: an4359 circuit diagram for automatic voltage regulator G PLC connection CY14B101KA
Contextual Info: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 128 K × 8 (CY14B101KA) or

Contextual Info: CY14B101KA CY14B101MA 1-Mbit 128 K x 8/64 K × 16 nvSRAM with Real Time Clock 1-Mbit (128 K × 8/64 K × 16) nvSRAM with Real Time Clock Features 1-Mbit nonvolatile static random access memory (nvSRAM) ❐ 25 ns and 45 ns access times ❐ Internally organized as 128 K × 8 (CY14B101KA) or

tm81a

Abstract: MN102H55G
Contextual Info: □ MN102H55G / HF55G MN102H55G / HF55G 1 Type 1 ROM x8-Bit 1 RAM 1 Minimum Instruction Execution Time With Main Clock operated 1 Interrupts •RSTPin ( 128 K /128 K (Flash) 8-Bit) 4 K /4 K «Watchdog 58 ns (at 3.0 V to 3.6 V, 34 MHz) • l\IMI Pin »Timer Counter 0 to 7 Underflow

Contextual Info: M93C86, M93C76, M93C66 M93C56, M93C46, M93C06 16 K/8 K/4 K/2 K/1 K/256 x8/x16 Serial Microwire Bus EEPROM • INDUSTRY STANDARD MICROWIRE BUS ■ 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION ■ DUAL ORGANIZATION: by WORD (x16) or by BYTE (x8)