JSPX1200A
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
1A Schottky barrier rectifier in SMA package with 200V maximum repetitive peak reverse voltage, ultra low forward voltage drop, high current and surge capability, suitable for surface mount applications. |
Original |
PDF
|
|
|
|
JSPI1200A
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
1A Schottky Barrier Rectifier in SOD-123FL package with 200V maximum repetitive peak reverse voltage, ultra low forward voltage drop, 1.0A average forward current, and lead-free design compliant with EU RoHS 2011/65/EU. |
Original |
PDF
|
|
|
|
RH1200A
|
|
SUNMATE electronic Co., LTD
|
Surface mount high voltage rectifier diode with maximum recurrent peak reverse voltage from 1200V to 2000V, maximum average forward rectified current of 1.0A, peak forward surge current up to 30A, low forward voltage drop, and operating junction temperature range from -55 to +150°C. |
Original |
PDF
|
|
|
|
Z1200A
|
|
SUNMATE electronic Co., LTD
|
Axial leaded silicon Zener diode in DO-41 package, 1.0W power dissipation, 3.3V to 400V zener voltage range, ±5% tolerance available, low leakage current, high reliability, designed for general-purpose voltage regulation applications.Axial leaded silicon Zener diode in DO-41 package, 1.0W power dissipation, 3.3V to 400V zener voltage range, low leakage current, high reliability, suitable for general-purpose voltage regulation applications.Axial leaded silicon Zener diode in DO-41 package, 1.0W power dissipation, 3.3 to 400V zener voltage range, low leakage current, high reliability, suitable for general-purpose voltage regulation applications.Axial leaded silicon Zener diodes in DO-41 package with 1.0W power dissipation, 3.3 to 400V zener voltage range, low leakage current, and ±5% or ±10% voltage tolerance, suitable for general-purpose regulation.Axial leaded silicon Zener diode in DO-41 package, 1.0W power dissipation, 3.3 to 400V zener voltage range, ±5% or ±10% tolerance options, low leakage current, high reliability, with cathode band marking.Axial leaded silicon Zener diode in DO-41 package, 1.0W power dissipation, 3.3 to 400V zener voltage range, low leakage current, high reliability, operating junction temperature from -55 to +175°C. |
Original |
PDF
|
|
|
|
B1200A
|
|
SUNMATE electronic Co., LTD
|
Surface mount Schottky barrier diode B1150A with 200V maximum DC blocking voltage, 1.0A average forward current, low forward voltage drop, guard ring die construction, and SMA package for use in low voltage applications requiring high efficiency and automatic assembly compatibility. |
Original |
PDF
|
|
|
JSPX1200A
