0X22D6 Search Results

HY29F800T

Abstract: PSOP 44 Pattern HY29F800B
Contextual Info: HY29F800 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte

HY29F800TT-90

Abstract: hy29f800tt HY29F800 PSOP44 29F800 code
Contextual Info: HY29F800 8 Megabit 1M x 8/512K x 16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte

Contextual Info: •HYUNDAI HY29F800 8 M egabit 1M x 8/512K x 16 , 5V Only, Flash M em ory KEY FEATURES • ■ ■ ■ ■ ■ 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 55 ns Low Power Consumption

M29F400FB

Abstract: M29Fxxx M29F160FT m29f800F M29F400 M29F160F M29F400FT
Contextual Info: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N

M29F400FB

Abstract: m29f800fb M29F200FB M29F400FT M29F800FT m29f160fb M29Fxxx m29f160ft JEDEC TRAY TSOP1 0x22D2
Contextual Info: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N

M29F800FT

Abstract: M29F800 M29F400FB M29F400FT
Contextual Info: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3

M29F800FT

Abstract: M29F400FB M29F200FB m29f160fb M29F400F M29F400FT m29f800fb m29F160FT M29F200FT 0x22D6
Contextual Info: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N

M29F800B

Abstract: M29F800T M29F800 M29W800T model AN1053 application note Flash driver source code AM29LV800B M29W800B M29W800T
Contextual Info: AN1053 APPLICATION NOTE Software Drivers for M29F800 and M29W800 Flash Memories CONTENTS Introduction The M29F800 Programming Model Modifying Code from Am29LV800 Using the C libraries C Library Functions Adapting the Software for the Target System Limitations of the code

Contextual Info: •HYUNDAI HY29F800 8 M egabit 1M x 8/512K x 16 , 5V Only, Flash M em ory KEY FEATURES • ■ ■ ■ ■ ■ 5 Volt Read, Program, and Erase - Minimizes system-level power requirements High Performance - Access times as fast as 55 ns Low Power Consumption

M29F800FT

Abstract: m29f800f M29F400FT M29F160F M29F200FT M29F160FT M29F800 M29F400F M29F200F M29F400FB
Contextual Info: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3

48-pin TSOP package tray micron

Contextual Info: M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 16Mb not available for this package • Automotive device grade 3

HY29F800ATT

Abstract: hynix 1.8 memory flash 0x78000
Contextual Info: HY29F800A 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 50 ns n Low Power Consumption – 20 mA typical active read current in byte

m29f800fb

Contextual Info: M29F 200FT, 400FT, 800FT, 160FT M29F 200FB, 400FB, 800FB, 160FB Top / Bottom Boot Block 5 V Supply Flash Memory Features „ Supply voltage – VCC = 5 V „ Access time: 55 ns „ Program / Erase controller – Embedded byte/word program algorithms TSOP48 N

HY29F800b

Abstract: HY29F800TT90 29F800 equivalent 29f800
Contextual Info: HY29F800 8 Megabit 1M x 8/512K x 16 , 5V Only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte