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Abstract: TC5563APL-15L TC5563APL-12L c0ee
Contextual Info: 8,192 WORD X 8 BIT CMOS STATIC RAM iDESCRI PTIONl The TC5563APL is a 65,536 bit static random access memory organized as 8,192 words by 8 bits using CMOS technology, and operates from a single 5V supply. Advanced circuit techniques provide both high speed and low power features with a maximum operating current of 5mA/MHz

Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM91020L-85, 10, 12 'd e s c r i p t i o n ! The THM91 0 20L is a 1,048,576 words by 9 bits dynamic RAM module which assembled pcs of TC511 0 00J on b oth sides of the printed circuit board. The T H M 9 1 0 20L is optimized for application to the systems wh i c h are required high

TC551001PL-10

Abstract: PL-1U TC551001PL-70 TC5KI001 TC551001FL-70 TC551001 TC551001PL-85 TC55100 tc551001pl
Contextual Info: TOSHIBA {LOGIC/MEMORY} IME D “L cî o c] 7 a 4 f l D o n s m 2 TOSHIBA NIOS MEMORY PRODUCTS ^ TC551001PL-70/PL-85/PL-10 TC551001FL-70/FL-85/FL-10 Id e s c r i p t i o n I The TC551001PL/FL is 1,048,576 bits static random access memory organized as 131,072 words by 8 bits using CMOS technology, and operated a

THM81000AS

Abstract: TC511000AJ TC511000A
Contextual Info: TOSHIBA MOS MEMORY PRODUCTS THM81000AS/AL-70, 80,10 THM81020AL-70, 80, 10 DESCRIPTION; The THM81000AS is 8 pcs of TC511000AJ on The THM81000AS is high density and large memory systems, and to a 1,048,576 words by 8 bits dynamic RAM module which assembled the printed circuit board.