lf412c
Abstract: LF412
Contextual Info: TEXAS INS TR LIN/INTFC 1ÔE » • 0=11,1724 0Q773Ö2 T LF412C DUAL JFET-INPUT OPERATIONAL AMPLIFIER 0 2 9 9 7 , M A R C H 1 9 8 7 -R E V IS E D M A Y 1 9 8 8 Low Input Bias Current Typically 50 p A D, JG , O R P P A C K A G E (T O P V IE W ) (OUTC • L o w Su p p ly C u rre n t. . . Typically 4 .5 mA
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0d773lf412cd29971987-revised+2v01/v02lf412
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JAGR SO 8
Abstract: JAGR
Contextual Info: OI«f MftMNft m ot » »I T B llw f a r r a » m a u a » tow ^émamt g *1? ISSE0/21j f»»WO « N M f W O J C C Ï I W I _ 7 J »tVIttQ»* ! Bnc [ufwI onanmm IJC l'-r.: - "fl •t. »:Vr L i. *"* • an . t iw wr nr «mm«, manm» r*r k l hhchimiiiwl «mm«
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isse0/21j230327-t22s378-0q773+2jagr so 8jagr
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SGS microcontroller
Contextual Info: [ Z J S G S -T H O M S O N M28C64 [ lQ o [ E L [ l© T O ( Q ] iQ © i PARALLEL 64K (8K x 8) EEPROM WITH SOFTWARE DATA PROTECTION • ■ ■ ■ FAST ACCESS TIME: 90ns SINGLE 5 V ± 10% SUPPLY VOLTAGE LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation
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m28c64pdip28plcc32dd773b2+2tsop28sgs microcontroller
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mtbf intel
Abstract: 28F008SA intel PLD 29042 UG773
Contextual Info: ADVANCE INFORMATION i n U CORP MEMORY/PLD/ SbE D • 4ûEbl7b Q 07 732 2 O IT B I T L E 28F008SA-L 8 MBIT (1 MBIT x 8 FLASHFILE MEMORY High-Density Symm etrically Blocked Architecture — Sixteen 64 KByte Blocks Low-Voltage Operation — 3.3V ± 0.3V or 5.0V ± 10% V cc
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00773sb28f008sa-l40-ll2e28f008sa-l200+10f28f008sa-l200pa28f008sa-l200e28f008sa-l250f28f008sa-l250pa28f008sa-l25028f008samtbf intelintel pld29042ug773
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