0Q041 Search Results

74FCT541

Abstract: 4029 cmos 4N57 74fct540 4029 truth table
Contextual Info: INTEGRATED DEVICE 14E D B 4ñ&5771 0Q041ÔS 1 • PRELIMINARY IDT 54/74FCT540/A IDT 54/74FCT541/A FAST CMOS OCTAL BUFFER/ LINE DRIVER FEATURES: DESCRIPTION: • 1DT54/74FCT540/41 equivalent to FASTIMspeed; IDT54/74FCT540A/41A 30% faster than FAST 3 The IDT54/74FCT540/A and IDT54/74FCT541/A are octal

Contextual Info: F eatures □ Comprehensive M IL-STD-1553 dual redundant Bus Controller BC , Remote Terminal (RT), and Monitor Terminal (MT) with integrated Bus Transceivers, Memory, and Memory Management Unit (MMU) □ Compliant MIL-STD-1553B, Notice II RT - Internal command ¡¡legalization in the RT mode

Contextual Info: Lattice T'Aie Lattice ispLSI and pLSI 2000 Family ï i I Corporation Features_ J Introduction to ispLSI and pLSI 2000 Family ispLSI and pLSI 2000 Family □ 154 M Hz System Perform ance □ 5.5 ns Pin-to-Pin Delay □ High Density 1,000-6,000 PLD Gates

Contextual Info: L4M Device Level 4 Mapper TXC-03456 DATA SHEET Preliminary . = • Maps an asynchronous 139.264 Mbit/s tributary into an AU-4/VC-4 STS-3c/SPE. • Nibble or byte 139.264 Mbit/s line interface - G.751 receive and transmit performance

Contextual Info: bq4016/bq4016Y Il BENCHMARQ 1024Kx8 Nonvolatile SRAM Features General Description ► D ata retention in the absence of power The CMOS bq4016 is a nonvolatile 8,388,608-bit static RAM organized as 1,048,576 words by 8 bits. The in­ tegral control circuitry and lithium

r12n10

Abstract: EMP7032 max7000
Contextual Info: Includes MAX7000E M A Y IVI M A 7 0 0 0 / UUU Programmable Logic Device Family March 1995, ver. 3 Features. Data Sheet • ■ ■ ■ ■ ■ ■ ■ ■ ■ High-performance CMOS EEPROM devices based on secondgeneration Multiple Array MatriX MAX architecture

Contextual Info: IV n o m electronic June 1992 M 67204 Hl-REL DATA SHEET_ 4k x 9 CMOS PARALLEL FIFO FEATURES . EM PTY, FULL AND HALF FLAGS IN SING LE DEVICE MODE WIDE TEMPERATURE RANGE : - 55°C TO + 125°C . RETRANSMIT CAPABILITY . BI-DIRECTIONAL APPLICATIONS 67204 L LOW POWER

QML-38535

Abstract: LM6121 smd handbook
Contextual Info: REVISIONS DATE DESCRIPTION LTR APPROVED YR-MO-DA Chan ge s in a c c o r d a n c e wi th NOR 5 9 6 2 - R 2 3 3 - 9 2 . 92-08-18 M. A. Frye A d d ca se o u t l i n e P. C h a n g e to se ct io n 1.3. Tech ni ca l and e d it o r i a l chan ge s th ro ug ho ut . _

512Kx1 DRAM

Contextual Info: HY51V4100B Series «HYUNDAI 4M X 1bit CMOS DRAM DESCRIPTION The HY51V4100B is the new generation and fast dynamic RAM organized 4,194,304x1-bit. The HY51V4100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide

Contextual Info: QATEL INNO VA TIO N a n d E X C E LLE N C E T P B MODE LS TViple Output High-Efficiency, Smaller-Package 25-40 Watt, DC/DC Converters DATELs new TPB Model, 25-40 Watt, triple-output DC/DC power converters bring you efficient "on-board" power processing in a cost-effective sm aller package

T73 5VDC

Abstract: BWR-5 12 volt class D schematic BWR-15/500-D5A Voltage to Current Converter dual 4-20mA Voltage to Current Converter dual 4-20mA circuit D12A D48A
Contextual Info: INNOVATION a n d EXCELLENC E RW R M O n F I £ rO A T E L . DC/DC CO N VERTER : B W B -i 2 /8 3 0 -D 4 8 A Dual Output A High-Reliability, 2" x 2" 15-20 Watt, DC/DC Converters - S E R I E S For your mid-range power requirements, it’s hard to beat the com bination of

Contextual Info: • m m Chatsworth, CA M ic m m s e m i P rog ress P ow ered b y T echnology 9261 Owensmouth Ave. Chatsworth, Ca 91311 Phone: 818 701-4933 Fax: (818)701-4939 Features • • Through Hole Package Capable of 600mWatts of Power Dissipation NPN General Purpose Amplifier

EPX880-10

Contextual Info: FLASHIogic Programmable Logic Device Family June 1996, ver. 2 Features. Data Sheet • ■ ■ ■ High-performance programmable logic device PLD fam ily SRAM-based logic w ith shadow F L A S H memory elements fabricated on advanced C M O S technology