0DS37 Search Results

Contextual Info: r = J S G S -TH O M S O N TEA7533 MONITOR AMPLIFIER • 7 DIGITALLY PROGRAMMABLE GAINS IN STEPS OF 4.5dB ■ ON/OFF POSITION . LOW VOLTAGE 3.5V to 6.5V ■ POWER: >140mW at 5V; >250mW at 6.5V V # S 0 -2 0 DESCRIPTION This 20 pins IC is designed for monitoring and

Contextual Info: Data Sheet • A l G il Microelectronics T7121 HDLC Interface for ISDN HIFI-64 Features • Low-cost device for B-channel (64 kbits/s) or Dchannel (16 kbits/s) data transport ■ Optional transparent mode — no HDLC framing is performed ■ Frame sync (FS) allows a slot-select feature to

TLCS-68000

Contextual Info: S HI B A UC/UP 54E D TOSHIBA • DDE3 7 1 ti 7 7 S * T 0 S 3 TM P68440 ~ T V 5 2 '* 3 3 - 1 ? 1. INTRODUCTION TLCS-68000 microprocessors utilize state-of-the-art MOS technology to maxim ize performance and throughput. The TMP68440 dual-direct memory access controller

antilarsen dynamic

Abstract: loudspeaker amplifier antilarsen TEA7051
Contextual Info: S G S -T H O M S O N L i « M 0 êS TE A 7532 M O NITO R AMPLIFIER • ■ ■ ■ PROGRAMMABLE GAIN IN STEPS OF 6 dB ON/OFF POSITION LOW VOLTAGE POWER : 100 mW AT 5 V DESCRIPTION DIP16 This 16 pins IC is designed for monitor (loudspeaker telephone set and provides:

7652n

Abstract: 2n6766
Contextual Info: • 4302571 0[153734 3ZT ■ HAS 2N 6 76 5 2N 6766 S H a r r is N -Channel Enhancem ent-M ode Power Field-Effect Transistors A u g u st 1991 Features Package T O -20 4 A E BOTTOM VIEW • 25A and 30 A , 1 50V - 2 0 0V • ro s o n = 0 .0 8 5 0 and 0 .1 2 f l

ES0406

Abstract: r00nF A6151 TDA615 6151X sc 6700
Contextual Info: bSE D • fi235bD5 0 0 5 3 7 ^ 7T4 « S I E G SIEM EN S_ _ SIEMENS AKTIENGES ELLS CHAF S a t e l l i t e - V i d e o IC TDA6151X Bipolar 1C Preliminary Data Features • G a in adjustable for different FM -deviations • V id e o buffer and sp ecial baseband output for the sound

FIT4 diode

Contextual Info: • 4302271 00537^1 ms ■ HAS 2N 6800 £3 HARRIS N-Channel Enhancement-Mode Power MOS Field-Effect Transistor August 1991 Package Features T 0 -2 0 5 A F BOTTOM VIEW • 3A, 400V • rDS on = • SOA is Power-Dissipation Limited SOURCE GATE • Nanosecond Switching Speeds

Contextual Info: • 4305E71 0□ S3 7 Tti hi? m HAS g HARRIS 2N6802 N-Channel Enhancem ent-M ode Power M OS Field-Effect Transistor August 19 9 1 Features Package TQ-205AF m 0 *1.0 EA K fU W l * A , OUUV B O TTO M VIEW * rDS(on = 1 -s r i • SO A is Po w e r-D issip a tio n Lim ited