0DQ71 Search Results

Contextual Info: features and Benefits B Sizes 8 to 50 circuits • Low profile H Fully shrouded to protect pins during mating H 2 polarized end slots C -G rid m o i e x 2.54mm .100" Pitch Electrical C-Grid SL” Current: 2.5A Dielectric Withstanding Voltage: 600V AC/1 min.

Contextual Info: MP1230A/31A/32A CMOS Microprocessor Compatible Double-Buffered 12-Bit Digital-to-Analog Converter Z*EXQR FEATURES • Superior Ruggedized 1230 Series: 2 KVE S D • Four Quadrant Multiplication • Stable, More Accurate Segmented DAC Approach 0.2 ppm/°C Linearity Tempco

Contextual Info: Y I I I I VI A I I U 11 U l l l HY29F200T/B Series 2 Megabit 5.0 volt-only Sector Erase Flash Memory KEY FEATURES • 5.0 V ± 10% Read, Program, and Erase - Minimizes system-level power requirements • High performance - 70 ns access time • Compatible with JEDEC-Standard Commands

Contextual Info: November 1996 Revision 1.0 FUJITSU D A T A S H E E T - EDC4B V724 2/4 -(60/70)(J/T)G-S 32MByte (4M x 72) CMOS EDO DRAM Module - 3.3V (ECC), Buffered Generai Description The EDC4BV724(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module

WJ-A88

Contextual Info: WJ-A88 / SMA88 5 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN: 18.7 dB TYP. HIGH OUTPUT POWER: +20.5 dBm (TYP.) HIGH THIRD ORDER I.P.: +30 dBm (TYP.) Outline Drawings Specifications* Characteristics Frequency (Min.)

Contextual Info: GMM7734110CS/SG-6/7 LG Semicon Co.,Ltd. 4,194,304 W O R D S x 72 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 77341IO C S /S G is an 4M x 72 bits EDO D ynam ic RA M M O D U L E w hich is assem bled 18 pieces o f 4M x 4bit EDO D R A M s in 24 pin SO J package, tw o 16bit

Contextual Info: C -G rid m o l e x 2.54mm .100" Pitch Vs— ' C-Grid III " Crimp Connector Housing FEATURES AND SPECIFICATIONS Features and Benefits Electrical • Sizes 6 to 64 circuits Voltage: 350V ■ Polarized Current: 3.0A max. ■ Friction lock Contact Resistance: 20m £2 max.

ma8601

Abstract: FCD 5250
Contextual Info: GMM7731010CT/TG-6/7 LG Semicon Co.,Ltd. 1,048,576 W O R D S x 72 BIT CMOS EDO DYNAMIC RAM MODULE Description Features T he G M M 7 7 3 101OCT/TG is an 1M x 72 bits ED O D ynam ic R A M M O D U LE w hich is assem bled 4 pieces of 1M x 16bit EDO D R A M s in 44 pin T SO P II package, 2 pieces

1A20-A23

Abstract: 99108 G0723 S-108 SR 7231 10BASE2 10BASE5 RA13 SMC91C90 pqfp 3.2mm footprint
Contextual Info: STANDARD MICROSYSTEMS bSE Û5b4bôb D b2b i snc SM C 91C 90 S T A N D A R D M IC R O S Y S T E M S C 0 R P 0 R A T 1 0 I\L ^ = = ^ = s r 0DD714S PRELIMINARY COMPONENT PRODUCTS DIVISION 80 A rk a y D rive, H a u p p a u g e , NY 11788 5161 435-6000 Fax <516 231-6004

Contextual Info: HbE D CYPRESS SEMICO NDU CTOR 250^2 0DD7121 2 E3CYP CY7C343 CYPRESS SEMICONDUCTOR 64-Macrocell MAX EPLD Features Functional Description • 64 MAX macrocells in 4 LABs • 8 dedicated inputs, 24 bidirectional I/O pins • Program m able interconnect array

Contextual Info: GMM7731000CT/TG -6/7 LG Semicon Co.,Ltd. 1,048,576 W O RD S x 72 BIT CMOS DYNAMIC RAM MODULE Description Features T he G M M 7731OOOCT/TGis an 1M x 72 bits Dynam ic RAM M O DULE w hich is assem bled 4 pieces o f 1M x 16bit D RA M s in 44 pin TSO P II package, 2 pieces o f 1M

lz 1013C

Contextual Info: GMM7641013CSG-6/7 LG Semicon Co., Ltd. 1,048,576 W O R D S x 64 B IT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 7 6 4 1013C SG is an 1M x 64 b its E D O * 1 6 8 p in s D ual In-L ine Package - G M M 7641013C S G : G old plating • E D O M ode C apability