0D31BB Search Results

ge 8513

Contextual Info: 5 b E *57 7 D ^ 2 3 ? Q G a ^ S 'ib SCS-THOMSON S G T ? *! • S G T H S -T H O M S O N TSG8513 iL O T -¿ ¥ -¿ > 5 ~ SWITCHED CAPACITOR MASK PROGRAMMABLE FILTER ■ CHEBYCHEVTYPE ■ 8TH ORDER ■ STOPBAND ATTENUATION : 69dB typ AT 2 x Fc ■ PASSBAND RIPPLE : 0.15dB (typ)

Contextual Info: Data Sheet June 1999 microelectronics group Lucent Technologies Bell Labs Innovations ORCA Series 3C and 3T Field-Programmable Gate Arrays Features • High-performance, cost-effective, 0.35 pm OR3C and 0.3 pm (OR3T) 4-level metal technology, (4- or 5-input

Contextual Info: Advance Data Sheet February 1998 m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations Ambassador T8100 H.100/H.110 Interface andTime-Slot Interchanger 1 Product Overview Programmable switching between local time-slots and H.100 bus, up to 256 connections

2SB 731

Abstract: TSG8511 tup 631 TSG85
Contextual Info: SbE D • 7121237 0 G 3 lì204 157 ■ SGTH SCS-THOMSON S G S -T H O N S O N T S G 8511 IL iO T @ « S T - é V - O ? S W ITC H ED CAPACITOR MASK PROGRAMMABLE FILTER ■ ■ ■ ■ ■ ■ ■ CAUER TYPE 7TH ORDER STOPBAND ATTENUATION : 55dB typ PASSBAND RIPPLE : 0.1 dB (typ)

km29v040t

Abstract: yd 4145 km29v040 V040T
Contextual Info: KM29V040T Flash ELECTRONICS 512Kx8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 3.3 - volt Power Supply The KM29V040T is a 512Kx8bit NAND Flash memory. • Organization - Memory Cell Array Its NAND cell structure provides the most cost-effective

71E1237

Contextual Info: SbE D 7TET237 OD B 't t RB S C S -T H O M S O N ¿ 7 / s g s 26T •SGTH T- ZS-J? I LH1061 - thomson DOUBLE POLE HIGH-VOLTAGE SOLID-STATE RELAY ADVANCE DATA AN AT & T PRODUCT ■ HIGH VOLTAGE IC FABRICATED IN A DIE­ LECTRIC ISOLATION PROCESS ■ OPTICAL COUPLING BETWEEN INPUT AND