0D205 Search Results

Contextual Info: PRELIMINARY 512K x 16, 1 MEG x 8 BOOT BLOCK FLASH MEMORY M IC R O N FLASH MEMORY MT28F800B1 martV o ltag e FEATURES • Eleven erase blocks: 16KB/8K-word boot block (protected Two 8KB/4K-word parameter blocks Eight main memory blocks • SmartVoltage Technology (SVT):

Contextual Info: IBM2520L8767 Preliminary ATM Resource Manager Features other uses DRAM devices. A single array of memory can be used in systems whose sus­ tained full-duplex total bandwidth requirement is less than 102Mb/s. • Optimized for server applications. • Configurable for sustained performance of up to

abb ac drive circuit diagram

Contextual Info: DATASHEET PM PMC-971154 ISSUE 5 p r e li m in a r y STANDARD PRODUCT | ^ I \ # I • PMC-Sierra, Inc. PM7324 sajni-a t l a s S/UNI-A TM LA YER SOLUTION PM7324 S/UNI-ATLAS SATURN USER NETWORK INTERFACE ATM LAYER SOLUTION DATASHEET PRELIMINARY ISSUE 5: JAN 1999

Contextual Info: OKI Semiconductor MSC23408C/CL-xxPS8 4,194,304-Word x 8-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23408C/CL-xxDS8 is a fully decoded 4,194,304-word x 8-bit CMOS Dynamic Random Access Memory Module composed of eight 4-Mb DRAMs 4M x 1 in SO] packages

CM160808-5N6J

Contextual Info: For technical assistance call the Strategic Products number on the back cover. Features Applications • High resistance to heat and hum idity ■ M obiiphone ■ Resistance to mechanical shock and pressure ■ Cellularphone ■ CTV, VCR, HIC, FDD ■ Accurate dim ensions fo r autom atic

Contextual Info: BURR-BROÜJN CORP blE D 17313bS 0020SÜ7 4S3 t - - OPA642 BURR-BROWN n IBUB n ADVANCED INFORMATION SUBJECT TO CHANGE Wideband Low Distortion OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • LOW DISTORTION: -90dBc at 5MHz

atmel 928

Abstract: 200T TRX01 20.945 crystal rpower battery
Contextual Info: Features • • • • • • • • • • • • • 400 MHz to 950 MHz with Digital Channel Selection Data Rate up to 50 kbps with Data Clock Recovery FSK Modulation, Fully Integrated Demodulator Synthesized Local Oscillator for Both RX and TX Fine, Digital Tuning of the Carrier Frequency 200 Hz steps

rz-12 relay

Abstract: RZ-12-C CMD 400 Radio Modem 10EZ11 Diode EB 29 EL 4N35 3AD6C
Contextual Info: RC32ACM « L * Rockwell RC32ACM Mobitex Wireless Data Modem with V.32 bis Wireline Support FEATURES INTRODUCTION The Rockwell RC32ACM modem is a two-device set that provides all the protocols and baseband signal processing needed to support the Mobitex wireless packet data system.

Contextual Info: MITSUBISHI DIGITAL ASSP M66220SP/FP 256 x 8-BIT MAIL-BOX DESCRIPTION PIN CONFIGURATION (Top view) The M66220 is a mail box that incorporates a complete CMOS shared memory cell of 256 x 8-bit configuration using high-performance silicon CHIP SELECT INPUT

Contextual Info: Features • • • • • • • • • • • • • 400 MHz to 950 MHz with Digital Channel Selection Data Rate up to 50 kbps with Data Clock Recovery FSK Modulation, Fully Integrated Demodulator Synthesized Local Oscillator for Both RX and TX Fine, Digital Tuning of the Carrier Frequency 200 Hz steps

qml-38535

Abstract: AD7890-10
Contextual Info: REVISIONS LTR DESCRIPTION DATE APPROVED Y R -M O -D A REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE 10 PREPARED BY

433mhz rf power amplifier 500 mw

Abstract: atmel 928 IC TX 434 SAW resonator 433MHz 200T AT86RF211 TRX01
Contextual Info: Features • • • • • • • • • • • • • 400 MHz to 950 MHz with Digital Channel Selection Data Rate up to 50 kbps with Data Clock Recovery FSK Modulation, Fully Integrated Demodulator Synthesized Local Oscillator for Both RX and TX Fine, Digital Tuning of the Carrier Frequency 200 Hz steps

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET FLASH MEMORY CMOS 16 M 2 M X 8 BIT MBM29F016 - 90/-12 • DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands Pinout and software compatible with single-power supply Flash

MV30101

Contextual Info: GEC S PLESSEY ADVANCE INFORMATION i DSjbt>8 t 3 M V 3 0 1 0 -1 SUBSCRIBER LINE AUDIO CIRCUIT The MV3010-1 is a S u b scrib e r Line A udio C ircu it SLAC for use in su b scrib e r line ca rds in telephone exchanges or sim ilar equipm ent It perform s A/D and D/A conversion, adjusts the gain

IC 72131

Contextual Info: IDT72131 IDT72141 CMOS PARALLEL-TO-SERIAL FIFO 2048 x 9 4096 x 9 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • • • The IDT72131/72141 are high-speed, low power parallelto-serial FIFOs. These FIFOs are ideally suited to serial communications applications, tape/disk controllers, and local

Contextual Info: CMOS PARALLEL-TO-SERIAL FIFO 2048 x 9 4096 x 9 IDT72131 IDT72141 FEATURES: DESCRIPTION: • • • The IDT72131/72141 are high-speed, low power parallelto-serial FIFOs. These FIFOs are ideally suited to serial communications applications, tape/disk controllers, and local

Contextual Info: LIE D • bEMTf l SS 0 0 2 D5 MS 3 m M MITSUBISHI H 2 M ■ M IT I 3 2 E J MITSUBISHI LSIs , S E J - 6 , - 7 , - 8 , - 1 PI Ef lORY/ASI C FAST PAGE MODE 2097152-WORD BY 32-BIT DYNAMIC RAM DESCRIPTION The M H 2M 32E J, SEJ is 2 0 9 7 1 5 2 w ord x 3 2 b it dynamic

20.945 crystal

Abstract: atmel 928 200T AT86RF211 TRX01 DAC ADC REVERSE POWER antenna transmitter "impedance matching" switched mode PA 0D205 1942B f201b
Contextual Info: Features • • • • • • • • • • • • • 400 MHz to 950 MHz with Digital Channel Selection Data Rate up to 50 kbps with Data Clock Recovery FSK Modulation, Fully Integrated Demodulator Synthesized Local Oscillator for Both RX and TX Fine, Digital Tuning of the Carrier Frequency 200 Hz steps

hst 1025

Abstract: sony lcd tv circuits diagrams diagram power supply sony 32 in LCD TV circuit
Contextual Info: SONY 3.4cm 1.35-inch Black-and-White LCD Panel Description The LCX007CL is a 3.4cm diagonal active matrix TFT-LCD panel addressed by polycrystalline silicon super thin film transistors with built-in peripheral driving circuit. Use of three panels in combination with