0D1747 Search Results

54HC08

Abstract: 54hct08
Contextual Info: T - 4 ^ - 2 1 - 0 0 Technical Data CD54/74HC08 CD54/74HCT08 HARRIS SEMICOND File N u m b e r SECTOR E7E D 4305271 0D17471 1549 Ü • High-Speed CMOS Logic Quad 2-Input AND Gate Type Features: ■ Buffered inputs ■ Typical CD54/74H C 08 propagation delay=7 ns

RCA-MJ15001

Abstract: J15002 92CS-3 d1747
Contextual Info: □1 G E SOLI» STATE 3875081 G E SOLID STATE General-Purpose Power Transistors 01E DE I 3fi7S0fll DD17470 fl 17470 _ > MJ15001, MJ15002 File Number 1093 Complementary N-P-N/P-N-P Silicon 'Power Transistors Rugged Devices, B roadly A p p licable For Industrial and

Contextual Info: O K I Semiconductor MSM51V16800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V16800 is OKI's CMOS silicon gate process technology.

Contextual Info: DS5001FP D A L L A S DS5001FP s e m i c o n d u c to r 128K Soft MicroprocGssor Chip PIN ASSIGNMENT FEATURES • 8051 compatible microprocessor adapts to its task - In-system programming via on-chip serial port - Can modify its own program or data memory -

MCJ-M077

Abstract: RCA-MJ15001 MJ15002 transistor mj1500 MJ15002 equivalent 30414 MJ1500 MJ15001 S001 clare mercury relay
Contextual Info: G E SOLI» STATE 3875081 G E SOLID "Öl STATE General-Purpose Power Transistors m 01E T J 3fi7S0fll DD17470 fl 17470 D T- _ > T - 2 2 '< S 3 File Number 1093 MJ15001, MJ15002 Complementary N-P-N/P-N-P Silicon 'Power Transistors R u gg ed Devices, B ro a d ly A p p lic a b le For Ind ustrial and

Contextual Info: SAMSUNG E L E C T R O N I C S INC b7E » • T'ìbMlMS KM6264BL/KM6264BL-L GD17472 mg CMOS SRAM 8 K x8 Bit Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 70,100,120 ns max. • Low Power Dissipation Standby (CMOS): 10^W (typ.) L-Version 5(iW (typ.) LL-Version

Contextual Info: TOSHIBA {D IS CRET E/ OP TO } 9097250 TOSHIBA TT <DISCRETE/OPTO De | TDT7SS0 0017477 99D 17477 D T-W-X3 TLP580, TLP58I GaAlAs Infrared Emitting Diode & NPN Silicon Photo-Transisotr The TOSHIBA TLP580 and TLP581 consists of a gallium aluminum arsenide, infrared emitting diode coupled with a silicon photo transistor in a