0D174 Search Results

54HC08

Abstract: 54hct08
Contextual Info: T - 4 ^ - 2 1 - 0 0 Technical Data CD54/74HC08 CD54/74HCT08 HARRIS SEMICOND File N u m b e r SECTOR E7E D 4305271 0D17471 1549 Ü • High-Speed CMOS Logic Quad 2-Input AND Gate Type Features: ■ Buffered inputs ■ Typical CD54/74H C 08 propagation delay=7 ns

2N6254

Abstract: rca 2n6254 2N6253 2N6371 N6253 2N625 92CS-20C74 2N6371 RCA
Contextual Info: 01 3875081 G E SOLID DE | 3 Ö 7 5 G Ö 1 0D17434 4 STATE General-Purpose Power Transistors 01E 17434 3 2N6253, 2N6254, 2N6371 File Number 1077 High-Power Silicon N-P-N Transistors 4For Ind ustrial and C o m m e rc ia l Use

Contextual Info: MITSUBISHI RF POWER MODULE 0D17423 T3*4 • M67749H 440-470MHZ, 12.5V, 7W, FM PORTABLE RADIO OUTLINE DRAWING Dimensions in mm BLOCK DIAGRA M e @ I PIN : © P in © V cci VBB ®VCC 2 ®PO ®GND : : : : : : RF INPUT 1st. DC SUPPLY BASE BIAS SUPPLY 2nd. DC SUPPLY

E67349

Contextual Info: TOSHIBA {DISCRETE/OPTO} T=ï DE | TOTTaSO 0D17457 b |~~ \ 9097250 T O S H IB A C D IS C R E T E /O P T O 99D 17457 T -<//-83 TLP550, 551 INFRARED L E D + P H O T O 1C DEGITAL LOGIC ISOLATION. LINE RECEIVER FEEDBACK CONTROL, PONER SUPPLY CONTROL. S WITCHING POWER SUPPLV.

Contextual Info: 0D1745S 444 • MITSUBISHI RF POWER MODULE M67776L 806-870MHZ,7.2V, 5.0W, FM PORTABLE RADIO OUTUNE DRAWING Dim ensions in m m P IN : P in R F IN P U T ©VCCI 1st. D C S U P P L Y @ VCC2 2 n d . DC S U P P L Y VCC3 3rd . DC S U P P L Y ®PO RF O U T P U T

2N5886

Abstract: 2N5885 1740-7D
Contextual Info: ö l 3 8 7 5081 G E SOLID STATE DE | 3 0 7 5 0 0 1 01E File N um ber 17407 0D17407 D General-PurposePower Transistors 1041 2N5885, 2N5886 High-Current, High Power, High-Speed N-P-N Power Transistors

Contextual Info: fax id: 5004 CY7B923 CY7B933 H O TLink T ra n sm itte r/R e ce ive d Features • • • • • • • • • • • • • • • • • twisted pair at data rates from 160 to 330 Mbits/second 400 Mbits/second for -400 devices). Figure 1 illustrates typical

Contextual Info: Preliminary Data Sheet July 1995 AT&T Microelectronics DSP1627 Digital Signal Processor 1 Features 2 Description • Optimized for digital cellular applications with a bit manipulation unit for higher coding efficiency The DSP1627 is AT&T's first 0.5 pm digital signal pro­

TLP511GA

Abstract: E67349 VARO280V RH56 TLP511G tlp511
Contextual Info: n TOSHIBA íDISCRETE/OPTOJ 9 0 9 7 2 5 0 T O S H IB A D I S C R E T E / O P T O » e I ' ì OTTSSO 0 0 1 7 4 5 3 O | 99D 174 23 D T - t / l - n T L P 5 IIGA GaAs IR E D & P H O T O -T H Y R I STO R The TOSHIBA TLP511GA consists o£ a photo-thyristor c o n n e c t e d i n v e r s e p a r a l l e l o p t i c a l l y c o u p l e d to a

MSM51V17100

Abstract: 724540
Contextual Info: O K I Semiconductor MSM5 1 V1 7 1 0 0 _ 16,777,216-Word x 1-Bit D Y N A M IC RA M : FAST PAGE M O D E TYPE DESCRIPTION The MSM51V17100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51V17100 is OKI's CMOS silicon gate process technology.

RCA-MJ15001

Abstract: J15002 92CS-3 d1747
Contextual Info: □1 G E SOLI» STATE 3875081 G E SOLID STATE General-Purpose Power Transistors 01E DE I 3fi7S0fll DD17470 fl 17470 _ > MJ15001, MJ15002 File Number 1093 Complementary N-P-N/P-N-P Silicon 'Power Transistors Rugged Devices, B roadly A p p licable For Industrial and

Contextual Info: O K I Semiconductor MSM51V16800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM51V16800 is OKI's CMOS silicon gate process technology.

JIS F05 connectors

Contextual Info: Whül H EW LETT m LH M PACKARD 125 Megabaud Fiber Optic Transceiver JIS F 07 Connection Technical Data HFBR-5527 Features Description • Data Transmission at Signal Rates of 1 to 125 MBd over Distances up to 100 Meters • Compatible w ith Duplex JIS F07 and Simplex JIS F05

circuit diagram of car central lock system

Abstract: STV 5v sense DG board Car Central lock system e purse ccs 100 car central lock car central lock vw OA74 LH28F800SG
Contextual Info: PRELIMINARY SHARP LH28F8Q0SG 8-MBIT 512 KB x 16 SmartVoltage FLASH MEMORY FEATURES SmartVoltage Technology • 3.0V or SV Vce - 3.0V, 5V or 12V Vw SRAM-Compatible Write Interface High-Density Symmetrically Blocked Architecture - Sixteen 32k-word Erasable Blocks

Contextual Info: INTERNATIONAL RECTI FI ER bSE D • 4055*432 D017442 4fl PD-2.281 International l»»l Rectifier 242NQ030 SCHOTTKY RECTIFIER 240 Amp Major Ratings and Characteristics Characteristics ' f av Rectangular waveform V RRM Description/Features 242NQ030 Units 240

0a214

Abstract: 048E3 09376h 036D3 030B9H 036B6 08d06 09-D2 0A211 0817AH
Contextual Info: TMS320 DSP Number 84E DESIGNER’S NOTEBOOK Speech data for Spanish LPC Day-Time-Stamping DTS on TMS320Cxx Contributed by Gerardo Murillo Design Problem Where can I get Spanish speech data allowing generation of a vocal output for Date and Time Stamping (DTS) and voice prompts ?

Contextual Info: DS5001FP D A L L A S DS5001FP s e m i c o n d u c to r 128K Soft MicroprocGssor Chip PIN ASSIGNMENT FEATURES • 8051 compatible microprocessor adapts to its task - In-system programming via on-chip serial port - Can modify its own program or data memory -

Contextual Info: HIGH-SPEED 36K 4K x 9-BIT SYNCHRONOUS DUAL-PORT RAM IDT7099S Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • High-speed clock-to-data output times — Military: 20/25/30ns (max.) — Commercial: 15/20/25ns (max.) • Low-power operation — IDT7099S

LA5613

Contextual Info: Ordering number : EN5669 Monolithic Linear 1C LA5613 No. 5669 VCR Regulator and Control Amplifier Overview Package Dimensions The LA5613 is an IC that includes an independently on/off switchable 5-V/0.7-A low-saturation regulator, an 11.3-V/0.3-A ripple filter, and a control amplifier on chip.

Contextual Info: LTC1409 uTECHNOLOGY im 12-Bit, 800ksps Sampling A/D Converter with Shutdown F€OTUR€S D cscn iP Tio n • Sample Rate: 800ksps ■ Power Dissipation: 80mW ■ 72.5dB S/ N + D and 86dB THD at Nyquist ■ No Pipeline Delay ■ Nap (4mW) and Sleep (1OpW) Shutdown Modes

Contextual Info: / T u r m TECHNOLOGY LTC 1096/LTC 1096L _ LTC 1098/ LTC 1098L Micropower Sampling 8-Bit Serial I/O A/D Converters F€RTUR€S DCSCRIPTIO n • 80pA Maximum Supply Current ■ 1nA Typical Supply Current in Shutdown ■ 8-Pin SO Plastic Package ■ 5V Operation LTC1096/LTC1098

MCJ-M077

Abstract: RCA-MJ15001 MJ15002 transistor mj1500 MJ15002 equivalent 30414 MJ1500 MJ15001 S001 clare mercury relay
Contextual Info: G E SOLI» STATE 3875081 G E SOLID "Öl STATE General-Purpose Power Transistors m 01E T J 3fi7S0fll DD17470 fl 17470 D T- _ > T - 2 2 '< S 3 File Number 1093 MJ15001, MJ15002 Complementary N-P-N/P-N-P Silicon 'Power Transistors R u gg ed Devices, B ro a d ly A p p lic a b le For Ind ustrial and

mj15003 equivalent

Abstract: MJ15003 clare mercury relay RCA3773 clare mercury rca8638e equivalent i30b RCA9116 2N6609 RCA8638D
Contextual Info: □1 G E SOLI» STATE 387 5081 G E SOLID STATE 01E File Number 1060 DE~| 3Ö7S0A1 □D174A1 E 17481 D General-Purpose Power Transistore RCA3773, MJ15003, RCA8638C, RCA8638D, RCA8638E Silicon N-P-N Epitaxial-Base

rca 17417

Abstract: TA8445 TA8723 TA8722 2N6476 2N6109 equivalent TA8210 2N6474 2N6106-2N6111 TA7743
Contextual Info: ÏÏÏ 3875081 G E SOLID DE | 3 ñ 7 S G ñ l STATE 01E 17415 DD1741S O D_ r T 3 _ _ General-Purpose Power Transistors - File N um ber 676 2N6106-2N6111, 2N6288-2N6293, 2N6473-2N6476 Epitaxial-Base, Silicon