0D112B Search Results

Contextual Info: M T4LC 4001J S 1M EGX 4 D R A M MICRON I 1 1 MEG x 4 DRAM DRAM FEATURES • Single +3.3V ±.3V power supply • Low power, 250|xW standby; 100m W active, typical • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process