0D025 Search Results

SLP-252B

Abstract: SLP152B SLP-152B SLP-169B SLP-284C-50 SLP166B SLP-46 467B
Contextual Info: SANYO SEMICONDUCTOR CORP 7b DE • 7 cH707fa 0D0255Û Q SANYO 7997076 ,j SANYO S EMI CON DU CT OR CORP 7ÓC 0 2 2 2 8 I— A ^ - i y L E D 5 * Lead Frame Type LED Absolute Maximum Ratings m. m « Type No. SLP-184C-50 ft« Drawing No. P-34 Ä ife Ê

KL SN 102 94v

Abstract: wire T568 SCV64 The VMEbus Handbook, Fourth Ed VMEbus interface handbook Q002 ih 584 el designer manual kds 1555 SAA 1260 Ka 2535
Contextual Info: O p e n b u s In t e r fa c e C o m p o n e n t s SCV64 User Manual Issue 1 * / • bSflfllDl Q[ D24A0 134 ■ This Material Copyrighted By Its Respective Manufacturer T h e in fo rm a tio n in th is d o c u m e n t is su b je c t to c h a n g e w ith o u t n o tic e an d sh o u ld n o t be c o n stru ed as a

Contextual Info: H Y 5 1 V 4 4 0 3 B • • H Y U N D A I S e r ie s IM x 4-bit CMOS DRAM with4CAS PRELIMINARY DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY51V4403B has four CASs CAS0-3 which control corresponding data I/O port in conjunction with OE(eg. CASO controls DQO,

toko cps5056b

Abstract: toko dc-dc Cps 11 toko dc-dc CPS1149 CPS1099 L4818 mr 6710 CPS1040 CPS1116 CPS6000
Contextual Info: T OKO AMERICA CPS INC S'JE D • DODeSS? Series DC-DC Converters ■ bST ■ TAI TOKO &>, OVERVIEW The CPS series of DC-DC converters are products of Toko’s original circuit development with built-in high stability and high reliability characteristics. In the structure, metallic housing is used to reduce

Contextual Info: Unshrouded Headers 2.54 X 2.54 m m 0.100 x 0.100 in.} These digits specify total num ber o f positions (4 through 72 available Base num ber specifies pin length and style Ordering Data This dig it specifies plating p io f ¡n o High tem perature plastic

Contextual Info: PUMA 2F16006-90/12/15 mosaic semiconductor, inc. 512Kx 32 FLASH MODULE Issue 4.0 September 1995 Description Features The PUMA 2F16006 is a 16 Megabit CMOS 5.0V only FLASH Module in a 66 pin PGA package, which is configurable as 8 ,1 6 ,3 2 bit wide using CE1-4. Access times of 90,120 and 150 ns are

S2301

Abstract: C2325 S2301-512 S2304-1024F 256F 1024F image sensors S2304 S2304-512F c2325 hamamatsu
Contextual Info: H AMAMAT S U CORP n E D HAMAMATSU TECHNICAL DATA C 422^0^ 0 G 0 2 S 5 ci b T - MI-55 PCD LINEAR IMAGE SENSORS S2301-F, S2304-F SERIES WITH FIBER OPTIC WINDOW The S2301 and S2304 series PCD linear im age sensors are m onolithic self-scanning photodiode arrays designed

Contextual Info: QSFCT651T, 652T, 2651T, 2652T Q High Speed CMOS n « I * _ì 8-Bit Bus Interface Register Tranceivers QS54/74FCT652T qs54/74fct265it* QS54/74FCT2652T FEATURES/BENEFITS • Pin and function compatible to the 74F651/2 74FCT651/2 and 74FCT651T/2T • CMOS power levels: <7.5 mW static

Contextual Info: ><M y i l u n fi i H Y 5 1 V 4 4 1 O B S e r ie s 1M x 4-bit CMOS DRAM with Write-Per-Bit PREUMINARY DESCRIPTION The HY51V4410B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY51V4410B utilizes Hyundai's CMOS silicon gate process technology as well as advanced

Contextual Info: IBM11D4360B IBM11E4360B IBM11D8360B IBM11E8360B 4M/8M x 36 DRAM Module Features High Performance CMOS process Single 5V, ± 0.5V Power Supply All inputs & outputs are fully TTL & CMOS compatible Fast Page Mode access cycle Refresh Modes: RAS-Only, CBR and Hidden

rca 610

Abstract: scr RCA scr t400 RCA 32 47 radiotron RADIOTRON ST-14 Scans-0017399
Contextual Info: ¿ ^ 2ù n n ìn q h a m /£ jià 'Ì2!7 R a d i o t r o n \Ss7 RCA-32 SCREEN GRID R-F AMPLIFIER F ila m e n t C o ate d V o lta g e 2 ,0 d - c v o l te 0 .0 6 0 C u rre n t amp* D ire c t I n t e r e l e c t r o d e C a p a c ita n c e s » G rid t o P l a t e (w ith s h le ld - c a n J

Contextual Info: H Y 5 1 4 4 1 0 B » H Y U N D A I S e r ie s 1 M x 4-bit C M O S D R A M with Wrlte-Per-BK PRELIMINARY DESCRIPTION The HY514410B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit with function of Write-Per-Bit. The HY514410B utilizes Hyundai's CMOS silicon gate process technology as well as advanced

RD212

Abstract: A1415 A1425 A1425A-3 A1440 A1460 actcl AH25A-3
Contextual Info: Accelerator Series FPGAs - ACT 3 Family Features Replaces up to twenty 32 macro-cell CPLDs • Up to 10,000 Gate Array Equivalent Gates up to 25,000 equivalent PLD Gates Replaces up to one hundred 20-pin PAL Packages Up to 1153 Dedicated Flip-Flops

Contextual Info: L29C524/525 Dual Pipeline Register FEATURES DESCRIPTION □ P ip eline R egisters — D u al 7-D eep L29C 524 or D ual 8-D eep (L29C525) □ C onfigu rable to Sin g le 14-D eep and Single 16-D eep □ Low P ow er C M O S T echnology □ R eplaces A M D A m 29524 and

Contextual Info: A / V X * C O M , I N C . M X 346 AUDIO PROCESSING ARRAY FOR CELLULAR TELEPHONES FEATURES • • • • • 8/1 Okbit RX Wideband Data Filter and Limiter AMPS, TACS, NMT Audio + Data Processing • Filters for Speech/MSK, Speech, SAT and Data— Full Duplex Filtering

Alpha 21164PC

Contextual Info: 1 About This Data Sheet This data sheet provides a technical overview o f the D igital Sem iconductor Alpha 21164PC m icroprocessor called the 21164PC , including: • Functional units • Signal descriptions • External interface • Internal processor register (IPR) sum m ary

Contextual Info: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES • Full CMOS, 6T Cell Two Options - P4C148 Low Power Standby Mode - P4C149 Fast Chip Select Control ■ High Speed Equal Access and Cycle Times -10/12/15/20/25 ns (Commercial) - 15/20/25/35 ns (P4C148 Military)

Contextual Info: 3flE D M I CR ON T E C H N O L O G Y INC '• blllS^ 0 0 0 2 5 3 b *î « U R N PRELIMINARY ■TN¿Éfi- nfr ftM-^il- < T -% -2 3 -3 7 VRAM 256K X 4 DRAM WITH 512 X 4 SAM • • • • « • • • • • • Industry standard pinout, timing and functions

Contextual Info: LOW VOLTAGE DETECTOR RX5VT SERIES •OUTLINE The R X 5VT Series are voltage detector ICs with high detector threshold accuracy and ultra-low supply current by CMOS process, which can be operated at an extremely low voltage and is used, for instance, for system reset.

P4C198

Abstract: P4C198A 3CE12
Contextual Info: P4C198/P4C198L, P4C198A/P4C198AL ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell 5V ± 10% Power Supply High Speed Equal Access and Cycle Times -10 /1 2 /1 5 /2 0 /2 5 ns (Commercial) - 12/15/20/25/35 ns (Industrial) - 15/20/25/35/45 ns (Military)

IN540

Abstract: step down transformer 2X18 Q002 on step down tranformer potention resistor tl 4226 G 2N1870A 2N1871A 2N1872A
Contextual Info: MIL S P ECS I C | 0000125 0002556 | INCH-POUND ! NOTICE ¡OF VftLIDftTIQN MIL-S-19500/198A <NAVY NOTICE 1 24 August 1988 MILITARY SPECIFICATION SEMICONDUCTOR DEVICES, THYRISTORS TYPES 2N1870A, 2N1871A, 2N1872A, AND 2N1874A MIL-S-19500/198A NAVY) and amendment 1, dated 16 May 1969, have been reviewed

Contextual Info: PMC-Sierra, Inc. S TANDARD PRODUCT I V I V —_PM5355 S/UNI-622 ISSUE 2 SATURN USER NETWORK INTERFACE 622 Mbit/s FEATURES • Monolithic Saturn User Network Interface that implements the ATM physical layer for Broadband ISDN according to CCITT Recommendation 1.432 and the ATM

15D diode smd code

Contextual Info: P4C188/P4C1881ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS j ì- FEATURES • Full CMOS, 6T Cell ■ Single 5V±10% Power Supply ■ High Speed Equal Access and Cycle Times

RH5VL35AA-T1

Abstract: RX5VL24C
Contextual Info: imm VOLTAGE DETECTOR R X 5V L SER IES •OUTLINE T h e R X 5 V L S e rie s a r e v o lta g e d e te c to r IC s w ith h ig h d e te c to r th r e s h o ld a c c u ra c y a n d u ltra -lo w su p p ly c u r r e n t b y C M O S p ro c e ss. E a c h o f th e s e IC s c o n s is ts of a v o lta g e re fe re n c e u n it, a c o m p a ra to r, r e s is to r s fo r