0Q011 Search Results
0Q011 Price and Stock
Kyocera AVX Components M49470Q01155MEN- Waffle Pack (Alt: M49470Q01155MEN) |
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M49470Q01155MEN | Waffle Pack | 32 Weeks | 40 |
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KEMET Corporation M49470Q01105KENMultilayer Ceramic Capacitors MLCC - Leaded 500V 1uF BQ KPS LDD Mil SMPS PRF49470 |
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M49470Q01105KEN | 10 |
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KEMET Corporation M49470Q01125MEJMultilayer Ceramic Capacitors MLCC - SMD/SMT 1.2UF 500V 20% |
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M49470Q01125MEJ |
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Kyocera AVX Components M49470Q01186MEJSmps Stacked Mlc Cap Sm027C186Mhj650; |Kyocera Avx M49470Q01186MEJ |
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M49470Q01186MEJ | Bulk | 2 |
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KEMET Corporation L1QN40C155KB48Multilayer Ceramic Capacitors MLCC - Leaded 1.5UF 500V 10% HV |
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L1QN40C155KB48 | WAFL | 50 | 1 |
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0Q011 Datasheets Context Search
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Contextual Info: SbE ]> 3 D 3 D b O c] 0Q0111S «VCT VTP8C03DS R bv . A PHOTODIODE ARRAY 8 ELEM ENT J ^ E G zO VACTEC VTP8C03 O P T O E L E C T R O N IC S E G & G VACTEC T-^I-55 FEATURES PRODUCT DESCRIPTIO N • 8 Element array • Common cathode • Symmetrically arranged bond pads |
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0q0111svtp8c03dsvtp8c03 | |
synchros application
Abstract: 101C 106C 107C 202D 204B
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0q0112tmil-std-202dmil-m-38510twx510-224-6420+6 | |
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Contextual Info: NEU J AP AN RADIO MSE CO L T D D • 0Q0117G PIN DIODES I NJ R C 11b 0 7 - 1S NJX2000 Series ■ Description NJX2000 Series is passivated silicon PIN diode of mesa construction. Excellent process and assembly technologies pro vide highly reproducible and reliable devices. These devices are suited for switches, limittors, attenators, phase shifters and |
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0q0117gnjx2000njx2301500mhz | |
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Contextual Info: 40E D • SENI 3455736 0Q0111M S FASCO INDS/ SENISVS Photovoltaic Diode Chips Clairex offers a broad range of custom and stock photodiode designs. Chips may be selected for special electrical requirements, i.e., light sensitivity, break down voltage, dark current, etc. All chips have gold |
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0q0111mclcd641 | |
P1719
Abstract: M/HLMP-1719
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0q0117hlmp-1700hlmp-4700hlmp-1719+7 | |
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Contextual Info: SbE D 3Q3übO^ 0Q011Ô2 o n .050" NPN Phototransistors • VCT VTT1015, 16, 17 TO-46 Flat Window Package E G & 6 VACTE C " F ^ l ~ c j_ PACKAGE DIMENSIONS inch (mm .50 ( 12 . 7 ) ■206 ( 5 . 2 3 ) .205 ( 5 .2 1 ) CASE1 TO-46 HERMETIC (FLAT WINDOW) CHIP TYPE: 5OT |
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0q011vtt1015400fcvtt1016+1 | |
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Contextual Info: i COLLMER SEMICONDUCTOR INC 5SE D • 55367^2 0Q011G4 fl ■ 7 '33-?£ |3 j 1200 volts class IG B T modules • The turnoff time is one tenth or less that of bipolar transistors, enabling a high conversion ferquency for power converters. • The voltage drive element enables the drive circuit to be miniaturized and used in com m on. |
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0q011g4 | |
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Contextual Info: Introduction This manual provides the information needed to configure the PSX Family devices using the JTAG interface. It is intended for users who plan to write their own code to configure the PSX devices. In addition, this manual explains how the boundary scan features implemented in the PSX devices can be used |
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psx160psx128bpsx96bhas27+1 | |
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Contextual Info: ADVANCED POWE R TECHNOLOGY b3E I I S/D JJ5J I A dvanced P ow er Te c h n o lo g y OD M m OSSTiOl DDOllDt APT5020HJN 500V 28.0A 0.200 ^ V ' U L Recognized" File No. E145592 S ISOTOP® POWER MOS IV HALF-BRIDGE ISOTOP PACKAGE N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
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apt5020hjne145592s020hjnot-227 | |
82C556M
Abstract: OCH168 82C557M 82C558 OPTi 82C546 82c556 CI VIPER 17H 82C558M opti 82c556 IBM motherboard schematics
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82c556m/82c557m/82c558m82c556moch16882c557m+7 | |
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Contextual Info: 2bE D LO GI C D E V I CE S INC • 256/512/1K/2K/4K x 9-bit First-In/First-Out FIFO 55bSTOS Q G G l l S b fl ■ _ T - 9 d~3 S ~ L8C200/201 L8C202/203/204 DESCRIPTION FEATURES □ First-In/First Out (FIFO) using Dual-Port Memory Q Highspeed — tol5 ns Access Time |
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256/512/1k/2k/4k55bstosl8c200/201l8c202/203/204+4 | |
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Contextual Info: W741C260 x lm V Electronics Corp. 4-BIT MICROCONTROLLER GENERAL DESCRIPTION The W741C260 is a high-performance 4-bit microcontroller ^C with an LCD driver. The device contains a 4-bit ALU, two 8-bit timers, two dividers, a 32 x 4 LCD driver, and five 4-bit I/O ports |
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w741c260 | |
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Contextual Info: S ta n d a r d P r o d u c t I I / PMC-Sierra, Inc. 1 ^» ISSUES PM 5344 SPTX SONET/SDH PATH TERMINATING TRANSCEIVER FEATURES • Monolithic SONET/SDH Path Terminating Transceiver that terminates the path overhead of one or three STS-1 AU3 paths or a single STS-3c (AU4) path. |
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CMD52
Abstract: 1869 lamp HLMP-4700 lamp 1869 VCH International CMD2454 HLMP-1700 HLMP-1719 HLMP-1790 HLMP-4719
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t-100000117flhlivip-1700hlmp-4700+9 | |
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Diode S140Contextual Info: 40E D 34=1=1730 G0Qllfl4 FASCO S- 4 ^SENI INDS/ 4 V-73 SENISYS Slotted Optical Sw itch es oo tOT r'.f'. dd — a i 3 0 C3.301 nrA 0.120 C3.053 0 lA [19.303 [18.80] — * £C X DIMENSIONS ARC IN INCHES CMILLIHETERS3 i> L— 0.990 1.010C25.65J [25.153 0.510 [12.95] |
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v--7326awgul1429diode s140 | |
yx 801
Abstract: yx 801 led yx 801 led driver yx 801 ic GP021 d1518 ujt timer IC yx 801 led driver gp031 UJT TIMERS AND OSCILLATORS
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pm33511x100pm0970113m00hb+13 | |
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Contextual Info: L P 5 Large Capacitance Aluminum Electrolytic Capacitors Series LP5 PC Board Plug-in Ultram iniaturized Capacitor • C a s e s iz e s ty p ic a lly o n e to tw o s iz e s s m a lle r th a n c o n v e n tio n a l o n e s . • In c re a s e d in a llo w a b le rip p le c u rre n t b y 5 to 4 0 % . |
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3pt100b | |
DIN 45326
Abstract: DIN 45322 DIN 41524 DIN 45329 DIN 45322 LUMBERG din 45321 male 12 lumberg DIN 45329 SGR60 SGR50 DIN 45326 MALE
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iec-2212poligesgr30sgr40+13 | |
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Contextual Info: Die angegebenen Vetpackungseinheiten VE gelten als Mindestabnahmemenge bei Lieferung ab Werk. S lumberg The package units (VE) being stated are automatically the lowest possible quantities being available ex works. Les livraisons d’usines ne peuvent être inférieures aux unités d’emballage |
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5bl52350q01135 | |
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Contextual Info: T> m SñbñMSb OGQllD? n llll I f T MATRA MTT « M f l H S l i i September 1990 il H S HM 65767 DATASHEET 16 K X 1 HIGH SPEED CMOS SRAM FEATURES . . . . 300 MILS WIDTH PACKAGE TTL COMPATIBLE INPUTS AND OUTPUTS ASYNCHRONOUS CAPABLE OF WITHSTANDING GREATER THAN |
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Contextual Info: NN51V18160B seriesFast Page Mode CMOS 1M x 16bit Dynam ic RAM NPN>a< DESCRIPTION The NN51V18160B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 16 bits. The NN51V18160B series is fabricated with advanced CMOS technology and designed with innovative |
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nn51v18160b16bitnn51v18160bl0qq11ch+2 | |
CSB546
Abstract: CSD401
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csd401csb546dp01153e3fl33c14 | |
AK2358E
Abstract: e50k YR40 Cordless Telephone Scrambler
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ak2358e2400bps0049-e-02e50k+2 | |