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    2SJ223

    Contextual Info: bl E J> 2 S J 2 2 3 m 44tìb2G5 0D12cìfltì 7b7 « H I T 4 , 2 S J 2 2 3 § — HITACHI/ OPTOELECTRONICS) Silicon P Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current


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    2SJ223 0D12c 2SJ223 GD12T PDF

    Contextual Info: lii m TECHNOLOGY U ïïf T 0 Â L Final Electrical Specifications LT1118-2.5/LT1118-2.85/LT1118-5 Low Iq , Low D ropout 800mA Source and Sink Regulators Fixed 2.5V, 2.85V, 5V O utput February 1995 F€flTUR€S DCSCRIPTIOn • Regulates While Sourcing or Sinking Current


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    LT1118-2 5/LT1118-2 85/LT1118-5 800mA LT1118 22\iF 551fl4fc 0G12CH4 PDF