09SEP2004 Search Results

D150*h02l

Abstract: D150N d150nh02 STD150 STD150NH02L-1 DPAK 0181G D150Nh02l
Contextual Info: STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK - IPAK STripFET™ IlI Power MOSFET General features Type VDSSS RDS on ID STD150NH02L STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A ) s ( t 3 3 1 • RDS(on) * Qg industry’s benchmark

JESD97

Abstract: STD100NH02L STD100NH02L-1 STD100NH02LT4
Contextual Info: STD100NH02L STD100NH02L-1 N-channel 24V - 0.0042Ω - 60A - DPAK - IPAK STripFET II Power MOSFET General features Type VDSSS RDS on ID STD100NH02L STD100NH02L-1 24V 24V <0.0048Ω <0.0048Ω 60A(1) 60A(1) 3 3 2 1 1. Value limited by wire bonding • RDS(on) * Qg industry’s benchmark

Power supply L6598D

Contextual Info: L6598 High voltage resonant controller Datasheet - production data • Sense op amp for closed loop control or protection features  High accuracy current controlled oscillator  Integrated bootstrap diode  Clamping on Vs  Available in DIP16 and SO16 packages

ISO7637

Abstract: VND830SP VND830SP13TR
Contextual Info: VND830SP Double channel high-side driver Features Type RDS on IOUT VCC VND830SP 60mΩ(1) 6A(1) 36V 10 1. Per each channel. 1 PowerSO-10 • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open-load detection ■ Off-state open-load detection

Contextual Info: VNQ810 Quad channel high side driver Features Type RDS on IOUT VCC VNQ810 160mΩ(1) 3.5A(1) 36V ) s ( ct 1. Per each channel. u d o SO-28 (double island) • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection

Contextual Info: VND830 Double channel high-side driver Features Type RDS on IOUT VCC VND830 60mΩ(1) 6A(1) 36V ) s ( ct 1. Per each channel. u d o SO-16L • CMOS compatible inputs ■ Open Drain status outputs ■ On-state open load detection Description ■ Off-state open load detection

Part Marking STMicroelectronics

Abstract: BUL416A Marking STMicroelectronics electronic ballast for fluorescent lighting transistor Electronic ballast marking L30 BUL416 BUL416B transistor BS 170
Contextual Info: BUL416 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Figure 1: Package STMicroelectronics PREFERRED SALES TYPE n n NPN TRANSISTOR n HIGH VOLTAGE CAPABILITY n VERY HIGH SWITCHING SPEED n FULLY CHARACTERISEZ AT 125 oC n LOW SPREAD OF DYNAMIC PARAMETERS 3

P7NK80

Abstract: p7nk80zf P7NK80ZFP p7nk STP7NK80ZFP P7NK80Z b7nk80z b7nk80 8979 STB7NK80Z-1
Contextual Info: STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH Power MOSFET Features VDSS @Tjmax Type RDS(on) ID STP7NK80Z 800V < 1.8Ω 5.2A STP7NK80ZFP 800V < 1.8Ω 5.2A STB7NK80Z

VN610

Abstract: ISO7637 VN610SP VN610SP13TR
Contextual Info: VN610SP Single channel high-side solid state relay Features Type RDS on IOUT VCC VN610SP 10mΩ(1) 45A(1) 36V 10 1. Per each channel. 1 PowerSO-10 • Output current: 45A ■ CMOS compatible inputs ■ Proportional load current sense ■ Under-voltage and over-voltage shutdown

p45nf06

Abstract: P45NF 7433 diagram nor gate 7433 P45NF0 STP45NF06 B45n STB45NF06 JULY2010 230v to 12v transformer
Contextual Info: STB45NF06 STP45NF06 N-channel 60 V, 0.023 Ω, 38 A TO-220, D2PAK STripFETTM II Power MOSFET Features Type VDSS RDS on ID STP45NF06 60 V <0.028 Ω 38 A STB45NF06 60 V <0.028 Ω 38 A • Exceptional dv/dt capability ■ Standard threshold drive ■ 100% avalanche tested

IEC1131

Abstract: ISO7637 VN800PT VN800PT13TR VN800S VN800S13TR
Contextual Info: VN800S VN800PT High-side driver Features Type RDS on IOUT VCC VN800S VN800PT 135 mΩ 0.7 A 36 V • CMOS-compatible input ■ Thermal shutdown ■ Current limitation ■ Shorted load protection ■ Under-voltage and over-voltage shutdown ■ Protection against loss of ground

p36nf06

Contextual Info: STP36NF06 STP36NF06FP N-channel 60V - 0.032Ω - 30A - TO-220/TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID STP36NF06 60V <0.040Ω 30A STP36NF06FP 60V <0.040Ω 18A(1) 1. Current limited by package 3 3 1 • Exceptional dv/dt capability

p22nf03l

Abstract: p22nf03
Contextual Info: STP22NF03L N-channel 30V - 0.0038Ω - 22A - TO-220 STripFET II Power MOSFET General features Type VDSS RDS on ID STP22NF03L 30V <0.05Ω 22A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization ■ 100% avalanche tested

Contextual Info: STD45NF75 N-channel 75V - 0.018Ω - 40A - DPAK STripFET II Power MOSFET General features Type VDSS RDS on ID STD45NF75 75V <0.024Ω 40A(1) 1. Current limited by package • 100% avalanche tested ■ Gate charge minimized 3 1 DPAK Description This Power MOSFET is the latest development of

P40NF03

Abstract: P40NF03L p40nf0 STP40NF03L TRANSISTOR mosfet 30V 40A MOROCCO P40NF03L ST MARKING p40nf
Contextual Info: STP40NF03L N-channel 30V - 0.018Ω - 40A - TO-220 STripFET Power MOSFET General features • Type VDSS RDS on ID STP40NF03L 30V <0.022Ω 40A Low threshold device Description 3 1 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"

JESD97

Abstract: STC5NF30V MOSFET MARKING ST
Contextual Info: STC5NF30V N-channel 30V - 0.027Ω - 5A - TSSOP8 2.7V-drive STripFET II Power MOSFET General features Type VDSS RDS on ID STC5NF30V 30V < 0.031 Ω ( @ 4.5 V ) < 0.035 Ω ( @ 2.7 V ) 5A • Ultra low threshold gate drive (2.7V) ■ Standard outline for easy automated surface

IRF640

Abstract: IRF640FP ST IRF640 IRF640 circuit JESD97 power MOSFET IRF640 fp IRF640 morocco
Contextual Info: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■

Contextual Info: VND810SP Double channel high-side driver Features Type RDS on IOUT VCC VND810SP 160 mΩ(1) 3.5 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • Very low standby current ■ CMOS compatible input ■ On-state open-load detection ■ Off-state open-load detection

Contextual Info: VND830MSP Double channel high-side driver Features Type RDS on IOUT VCC VND830MSP 60 mΩ(1) 6 A(1) 36 V 10 1. Per each channel. 1 PowerSO-10 • CMOS compatible inputs ■ Open drain status outputs ■ On-state open-load detection ■ Off-state open-load detection

P60NF03

Abstract: P60NF p60nf0 p60nf03l STP60NF03L
Contextual Info: STP60NF03L N-channel 30V - 0.008Ω - 60A TO-220 STripFET Power MOSFET General features • Type VDSS RDS on ID STP60NF03L 30V <0.01Ω 60A Low threshold drive Description 1 This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™"

VND5N07

Abstract: VND5N07-1 VND5N0713TR VNK5N07FM VNP5N07FI
Contextual Info: VND5N07 OMNIFET II fully autoprotected Power MOSFET Features Max. on-state resistance per ch. Current limitation (typ) Drain-Source clamp voltage RDS (on) 0.2Ω ILIMH 5A 1 VCLAMP 70V DPAK TO-252 • Linear current limitation ■ Thermal shutdown ■ Short circuit protection

IRF640

Abstract: IRF640 applications note circuit using irf640 power MOSFET IRF640 IRF640FP IRF640 mosfet JESD97
Contextual Info: IRF640 IRF640FP N-channel 200V - 0.15Ω - 18A TO-220/TO-220FP Mesh overlay Power MOSFET General features Type VDSS RDS on ID IRF640 200V <0.18Ω 18A IRF640FP 200V <0.18Ω 18A • Extremely high dv/dt capability ■ Very low intrinsic capacitances ■

ISO7637

Abstract: VND810M VNQ810M VNQ810M13TR VNQ830M
Contextual Info: VNQ810M Quad channel high side driver Features Type RDS on IOUT VCC VNQ810M 150mΩ(1) 0.6A(1) 36V 1. Per each channel. • CMOS compatible inputs ■ Open Drain status outputs ■ On state open load detection ■ Off state open load detection ■ Shorted load protection

D15NF10

Abstract: STD15NF10 75A12 JESD97 STD15NF10T4
Contextual Info: STD15NF10 N-channel 100 V, 0.060 Ω, 23 A, DPAK low gate charge STripFET II Power MOSFET Features Type VDSSS RDS on max ID STD15NF10 100 V < 0.065 Ω 23 A 3 1 • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization