09MAY2 Search Results

Contextual Info: 2 THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL PUBLICATION RIGHTS 20 LOC REV I S IONS D I ST GP 00 RESERVED. LTR DESCRIPTION RELEASED . 354 DWN DATE 09MAY2007 RG APVD DO . 235 2 X 0 . o 9 4— - c C I . P A R T N U M B E R C H A N G E S A ND OR D E S I G N C H A N G E S A E E E C T I N G T H E

UL-94V0

Abstract: 0-281695-3 0-281695-5 amp
Contextual Info: 3 Ç COPYRIGHT 2D 2 ALL RIGHTS RESERVED. 1 TYCO ELECTRONICS CORPORATION. TO US DROITS RESERVES C L A R IF IE M A T E R IA L li N O TES 5 , NO TE 3 6 AD D ED 09MAY2006 J .D Y.P 30SEP2008 GM PEG ) .02 00.63 DATE CODE MARK I NG S E E NOTE 6 J ) .03 HE A D E R T Y P E

so dimm ddr2 connector

Contextual Info: 2 THIS DRAWI NG IS UNPUBLISHED. RELEASED ALL C O P Y R I G H T 20 F OR 20 PUBLICATIO N RIGHTS L OC RESERVED. GP REVISIONS DIST 00 LTR DESCRIPTIO N R E V I S E D P E R E C O - 1 1- 0 0 5 0 3 3 A2 I 40.9 DATE DWN RK 09MAY201 I APVD HMR MAX I ^ +0 . 0 5 -0.08

Tyco PA66

Abstract: maranyl Tyco PBT 007 ul 94 v2 MRTXLSP5001-4PH1 zytel PA66 v0 750 zytel fr 10 EBD0-0067-05 4-154719-0 pa66 fr
Contextual Info: TH I S DRAW I NG IS UNPUBLI S HE D. C O P Y RI G HT 20 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL 20 PUBLICATION R 1G H T S LOC D I ST REV IS IONS RESERVED. LTR DESCR I PTION DWN DATE AD EBOO-OI 4 3-02 09MAY2ÛÛ2 AN E B O O - 0 4 3 0 - 02 12 D E C 2 ÛÛ2

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC ES ALL RIGHTS RESERVED. - 1 REVISIONS DIST 00 P LTR 162.52 REF EXTRACTORS OPEN DESCRIPTION DATE DWN APVD A3 REVISED PER ECO-11-005033 09MAY2011 RK HMR A4 ECR-11-013206

1367034-1

Contextual Info: 2 THIS DRAWING IS UNPUBLISHED. C O P Y R I G H T 20 RELEASED ALL FOR PUBLICATION RIGHTS 20 LOC RESERVED. ES DIST REVISIONS 00 LTR DESCRIPTION REVISED Jl 5.40 PER DATE E C O - 1 1- 0 0 5 0 3 3 DWN 09MAY201 I RK APVD HMR MAX PART COMPATABLE WITH D I M E N S I O N S NOT SHOWN

Contextual Info: 2 THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL PUBLICATION RIGHTS 20 LOC GP RESERVED. D I ST REV I S IONS 00 LTR DESCRIPTION DWN DATE RELEASED 09MAY2007 RG APVD DO 0.415 C C 1 . P A R T N U M B E R C H A N G E S AND OR D E S I G N C H A N G E S A F F E C T I N G T H E

Contextual Info: 2 THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS LOC GP RESERVED. D I ST REV I S IONS 00 LTR DESCRIPTION RELEASED . 578 . 354 DWN DATE 09MAY2007 RG APVD DO . 235 -E s - A 2X 0 . 094 c C I . P A R T N U M B E R C H A N G E S A N D OR D E S I G N C H A N G E S A E E E C T I N G

Contextual Info: 2 THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS LOC REV I S IONS D I ST GP RESERVED. 00 LTR DESCRIPTION RELEASED . 600 . 354 DWN DATE 09MAY2007 RG APVD DO -E s - 2 X 0 . I 32 2 X 0 . 062 T

Contextual Info: 2 THIS DRAWING IS COPYRIGHT UNPUBLISHED. 20 RELEASED BY TYCO ELECTRONICS CORPORATION FOR ALL 20 PUBLICATION RIGHTS LOC D I ST REV I S IONS GP 00 RESERVED. LTR DESCRIPTION DWN DATE RELEASED 09MAY2007 RG APVD DO I 85 . 354 l\ c 2X . 062 C I . P A R T N U M B E R C H A N G E S A N D OR D E S I G N C H A N G E S A E E E C T I N G

b01619

Abstract: D6NM60N
Contextual Info: STx6NM60N N-channel 600 V, 0.85 Ω, 4.6 A MDmesh II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N 650 V < 0.92 Ω 4.6 A STD6NM60N-1 650 V < 0.92 Ω 4.6 A STF6NM60N

PA6-GP30

Abstract: DIN 16901 140 PBT-GE20 PBT-GP20 1355036
Contextual Info: R E L E A S E D F O R P U B L I C A T I ON FREI F U E R V E R O E F F E N T L I CHUNG LOC REV 1S 1ONS D 1S T AENDERUNGEN NG Kodierung A AS A wie A S HOWN gezeigt P PROJEKT LTR N R .: D E S C R 1P T I O N B E S C H R E 1 BUNG S U R F A C E 0G GU AR D CAM C HAN GE D B E C A U S E OF R0 HS R E Q U I R E M E N T S

UR-94V-0

Abstract: UR94V-0
Contextual Info: TH I S DRAW ING I S U N P U B L I S H E D . DI F F US I ON R E S T R E I N T E _ C O P Y R I G H T 20 R E L E A S E D F OR P U B L I C A T I O N L I B R E A L A DI F F U S I O N BY T Y C O E L E C T R O N I C S C O R P O R A T I O N . AT OL UL S R DI GR HOTI ST S R RE ES SE ER RV VE ED S.

Contextual Info: STR2550 High voltage fast-switching PNP power transistor Datasheet - production data Features • Excellent hFE linearity up to 50 mA • Miniature SOT-23 plastic package for surface mounting circuits 3 • Tape and reel packaging 2 • The NPN complementary type is STR1550

M27W032

Contextual Info: M27W032 32 Mbit 2Mb x16 3V Supply FlexibleROM Memory FEATURES SUMMARY • ONE TIME PROGRAMMABLE ■ Figure 1. Packages SUPPLY VOLTAGE – VCC = 2.7 to 3.6V for Read – VPP = 11.4 to 12.6V for Program ■ ACCESS TIME ■ – 90ns at VCC = 3.0 to 3.6V

M68AW127B

Abstract: SO32 TSOP32
Contextual Info: M68AW127B 1Mbit 128K x8 , 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 128K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 70ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 1.5V TRI-STATE COMMON I/O

AN8079

Abstract: 01-jan-9999
Contextual Info: ispLEVER 8.1 Installation Notice Windows XP Windows 2000 Windows Vista 32-bit Lattice Semiconductor Corporation 5555 NE Moore Court Hillsboro, OR 97124 (503) 268-8001 May 2010 Copyright Copyright 2010 Lattice Semiconductor Corporation. This document may not, in whole or part, be copied, photocopied,

Contextual Info: L5150GJ 5 V low dropout voltage regulator Datasheet − production data Features Max DC supply voltage VS 40 V Max output voltage tolerance ΔVo +/-2% Max dropout voltage Vdp 500 mV Io 150 mA Iqn 5 µA 1 55 µA(2) Output current Quiescent current 1. Typical value with regulator disabled.

Contextual Info: STR2P3LLH6 P-Channel 30 V, 0.04 Ω typ., 2 A STripFET VI DeepGATE™ Power MOSFET in SOT-23 package Datasheet - preliminary data Features 3 2 Order code VDS RDS on max ID STR2P3LLH6 30 V 0.06 Ω at 10 V 2A • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on)

Contextual Info: STL4P3LLH6 P-channel 30 V, 0.04 Ω typ., 4 A STripFET VI DeepGATE™ Power MOSFET in PowerFLAT 2x2 package Datasheet - preliminary data Features 1 2 3 5 2 4 3 VDSS RDS on max. ID STL4P3LLH6 30 V 0.06 Ω at 10 V 4A • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on)

Contextual Info: LM4041 Precision micropower shunt voltage reference Datasheet - production data Description SOT23-3L The LM4041 is a micropower shunt voltage reference, providing a stable 1.225 V output voltage, with an initial accuracy of 0.1% @ 25 °C and a low temperature coefficient. Available in

Contextual Info: Model T-End Foot Tedea-Huntleigh Load Cell Mounting Feet FEATURES • Adjustable height or fixed height version • Designed to work with T-end version shear beams • Low profile • Stainless steel • Anti-vibration • Easy installation DESCRIPTION T-End mounting feet are ideal for platform use where a

diode B3 7

Abstract: ST4G3234 ST4G3234BJR STMicroelectronics DIODE marking code EE
Contextual Info: ST4G3234 4-BIT DUAL SUPPLY BUS BUFFER LEVEL TRANSLATOR WITH A SIDE SERIES RESISTOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH SPEED: tPD = 4.4ns MAX. at TA=85°C VCCB = 1.65V; VCCA = 3.0V LOW POWER DISSIPATION: ICCA = ICCB = 5µA(MAX.) at TA=85°C

SOT323-5L

Abstract: LM4041xx
Contextual Info: LM4041xx Precision micropower shunt voltage reference Datasheet − production data Features • Fixed 1.225 V typical output voltage ■ Ultra low operating current: 40 µA at 25 °C ■ High precision: +/- 0.1% @ 25 °C 0.2%, 0.5% and 1% versions are also available