09JUN08 Search Results

Contextual Info: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core

Contextual Info: HPS Vishay Sfernice High Ohmic Value up to 1.5 GΩ , High Power Resistors (up to 10 W at 25 °C) Thick Film Technology FEATURES • RoHS for most values, please consult us • • • • High ohmic values up to 1.5 GΩ Power rating up to 10 W at + 25 °C

Contextual Info: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core

Tyco PA66

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED BY TY C O C O P Y R IG H T E L E C T R O N IC S FO R ALL C O R P O R A T IO N . 2 P U B L IC A T IO N R IG H T S LOC RESERVED. D IS T R E V IS IO N S D E S C R IP T IO N A' DIM A 1.80 TYP 3 .5 0 TYP

Contextual Info: HFA32PA120CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 32 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

VBUS052BD-HTF-GS08

Contextual Info: VBUS052BD-HTF Vishay Semiconductors Low Capacitance, 2-Line ESD-Protection Diode Features • • • • • • • • • • • • Compact LLP75-4L package Low package height < 0.6 mm 2-line ESD-protection e3 Low leakage current < 0.1 µA Low load capacitance CD = 1.5 pF

Contextual Info: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core

Contextual Info: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC PowerPAK SO-8 S 6.15 mm • Notebook CPU Core

Contextual Info: IRF9Z20, SiHF9Z20 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V - 50 RDS(on) (Ω) VGS = - 10 V Qg (Max.) (nC) 0.28 26 Qgs (nC) 6.2 Qgd (nC) 8.6 Configuration Single P-Channel Versatility Compact Plastic Package Fast Switching Low Drive Current

74470

Abstract: DG411 DG412 DG413 DG451 DG452 DG453 SOIC16 TSSOP16
Contextual Info: New Product DG451/DG452/DG453 Vishay Siliconix High Voltage 4-Ω Quad SPST CMOS Analog Switch DESCRIPTION FEATURES The DG451 series has four independently selectable high voltage 44 V SPST switches, each with a typical on resistance of 4 Ω and a typical flatness of 0.2 Ω, ideal

2N6661-2

Abstract: M1042
Contextual Info: New Product 2N6661-2 Vishay Siliconix N-Channel 90-V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS min. (V) RDS(on) max. (Ω) VGS(th) (V) ID (A) 2N6661-2 90 4 at VGS = 10 V 0.8 to 2 0.86 S Device Marking Side View 1 2N6661-2 “S” fxxyy 3 G Low On-Resistance: 3.6 Ω

Contextual Info: TEMT4700 Vishay Semiconductors Silicon NPN Phototransistor Description TEMT4700 is a high speed silicon NPN epitaxial planar phototransistor in a miniature PLCC-3 package for surface mounting on printed boards. Due to its waterclear epoxy the device is sensitive to

si7758

Contextual Info: New Product Si7758DP Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0029 at VGS = 10 V 60 0.0038 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 46 nC • Halogen-free • SkyFET Monolithic TrenchFET Gen III

HFA30PA60CPBF

Contextual Info: HFA30PA60CPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • • • • • • • Base common cathode 2 Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free

VESD05A4A-HS4

Contextual Info: VESD05A4A-HS4 Vishay Semiconductors 4-Line Quad ESD Protection Diode Array in LLP1010-6L Features • • • • • • • • • • • • • Ultra compact LLP1010-6L package Low package height < 0.4 mm 4-line ESD protection (quad) e4 Low leakage current < 0.1 µA

74473

Abstract: DG455 DG456 DG411 DG412 DG413 SOIC16 TSSOP16
Contextual Info: New Product DG454/DG455/DG456 Vishay Siliconix High Voltage 4-Ω Quad SPST CMOS Analog Switch DESCRIPTION FEATURES The DG454 series has four independently selectable high voltage 44 V SPST switches, each with a typical on resistance of 4 Ω and a typical flatness of 0.2 Ω, ideal

RUWIDO

Abstract: vishay Diode type SMD marking SJ tsop Ir sensor ruwido r-step tsop8238 remote control car circuit diagram 20750 omni spectra diode detector tsop34138 TSOP31238 Motor DRIVE MTBF
Contextual Info: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book ir receiver modules vishay semiconductors vse-db0090-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

Contextual Info: RPH 100 Vishay Sfernice Power Resistor for Mounting onto a Heatsink Thick Film Technology FEATURES • High power rating • Low thermal radiation of the case • Wide ohmic value range • Easy mounting • High overload capabilities • Reduced size and weight

ARM at91sam

Abstract: AT91SAM
Contextual Info: AT91SAM Update for EWARM 1. Introduction The AT91SAM Update for EWARM enables you to keep your IDE up-to-date by integrating all the newer Atmel devices, software projects, and additional tools such as Flash loaders and device description files. Atmel’s software offering for its AT91SAM family of ARM Thumb® microcontrollers is

R0100

Abstract: rch sfernice
Contextual Info: RCH Vishay Sfernice Power Resistors, for Mounting onto a Heatsink Thick Film Technology FEATURES • 5 W to 50 W • High power rating • High overload capabilities up to 2500 VRMS • Wide resistance range from 0R24 to 1 MΩ Manufactured in cermet thick film technology, these power

MUN5211DW

Abstract: MUN5212DW MUN5213DW MUN5214DW MUN5215DW
Contextual Info: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor 6 NPN Silicon 5 R1 Q2 P b Lead Pb -Free R2 1 4 6 5 4 R2 Q1 R1 3 2 1 2 3 SOT-363(SC-88) NPN+NPN Maximum Ratings Symbol VCEO VCBO IC Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current

Contextual Info: MUN5211DW Series Surface Mount Dual Bias Resistor Transistor 6 NPN Silicon 5 R1 Q2 P b Lead Pb -Free 4 4 R2 Q1 R2 R1 1 6 5 3 2 1 2 3 SOT-363(SC-88) NPN+NPN Maximum Ratings Symbol VCEO VCBO IC Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current

DAP 07

Contextual Info: VESD09A4A-HS4 Vishay Semiconductors 4-Line Quad ESD Protection Diode Array in LLP1010-6L Features • • • • • • • • • • • • • Ultra compact LLP1010-6L package Low package height < 0.4 mm 4-line ESD protection (quad) e4 Low leakage current < 0.1 µA

m2017

Abstract: M1042 2N6661-2 M1051 m2017a 6863-2
Contextual Info: New Product 2N6661-2 Vishay Siliconix N-Channel 90-V D-S MOSFET FEATURES PRODUCT SUMMARY Part Number VDS min. (V) RDS(on) max. (Ω) VGS(th) (V) ID (A) 2N6661-2 90 4 at VGS = 10 V 0.8 to 2 0.86 S Device Marking Side View 1 2N6661-2 “S” fxxyy 3 G Low On-Resistance: 3.6 Ω