09FEB2010 Search Results

SCHNEIDER PLC

Contextual Info: THIS DRAWING IS C O P Y R I G H T 2 006 UNPUBLISHED. RELEASED ALL FOR PUBLICATION RIGHTS REVISIONS RESERVED. LTR DATE EC R - 0 9 - 0 2 6 7 5 6 B1 PANEL CUT-OUT W H E N OSEO DESCRIPTION DWN 09FEB2010 APVD ME F O R 0 O N T AO T I N S E R T W ITHOOT HOOSING

Contextual Info: T H I S DRAWING IS UNPUBLI SHED. COPYR IGHT 2006 RELEASED FOR P UB LI CA TI ON REVISIONS ALL RIGHTS RESERVED. LTR B1 DE S CR I PTI ON DATE EC R - 0 9 - 0 2 6 7 5 6 DWN APVD ME 09FEB2010 PANEL E U T - O U T FOR E O N T A O T I N S E R T W H E N USED W I T H O O T HOUS I NO

pc-gf20

Abstract: ON5264 pc-gf-20
Contextual Info: TH I S CO PN DRAWING IS UNPUBLISHED. C O P Y R I G H T 2000 0-1 As RELEASED TYCO BY ELECTRONICS FOR COR POR AT I O N . A L L P U B L I C A T I ON R IGHTS 2 000 LOC D IST REV IS IONS RESERVED. DESCRIPTION Shown Contact arrangement vi ew from connecting side

Contextual Info: L4925 Very low drop voltage regulator Features • Operating DC supply voltage range 6 V to 28 V ■ Transient supply voltage up to 40 V ■ Extremely low quiescent current ■ High precision output voltage ■ Output current capability up to 500 mA ■ Very low dropout voltage less than 0.6 V

Contextual Info: STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5 N-channel 550 V, 0.150 Ω typ., 16 A, MDmesh V Power MOSFETs in D²PAK, DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB TAB Order codes VDS @ TJmax RDS on max ID 600 V 0.192 Ω

ULGA52

Abstract: NAND08GW3B2C ONFI nand flash NAND04GW3B2DN6 NAND08G-B2C NAND08GR3B4C NAND08GW3B4C
Contextual Info: NAND04G-B2D NAND08G-BxC 4-Gbit, 8-Gbit, 2112-byte/1056-word page multiplane architecture, 1.8 V or 3 V, SLC NAND flash memories Features • High density NAND flash memory – Up to 8 Gbits of memory array – Cost-effective solution for mass storage applications

19NM50N

Abstract: STP19nm50n STW19NM50N STF19NM50N stf19nm50 17079 stp19nm50 19nm50
Contextual Info: STF19NM50N STP19NM50N, STW19NM50N N-channel 500 V, 0.2 Ω, 14 A MDmesh II Power MOSFET in TO-220FP, TO-220 and TO-247 Features Type STF19NM50N STP19NM50N STW19NM50N VDSS @ TJmax RDS on max 550 V < 0.25 Ω ID 2 14 A • 100% avalanche tested ■ Low input capacitances and gate charge

Contextual Info: TH I S D R A W I NG IS UNPUBL ISH E D . RELEASED BY C O P Y R I G H T 20 TYCO ELECTRONICS CORPORATION, FOR ALL PUBLICATION RIGHTS LOC REV I S IONS D I ST RESERVED. D E S C R I P T I ON FOR AS 2 SHOWN ARE . 3 . ON PAGE 2 DATE ECR-0 7 -0 0 I 864 06MAR07 KG ECR-07-025776

10-DOF

Abstract: LSM303DLH STEVAL-mki062v2 LSM303 2 axis Accelerometer STM32F103RE LPS001DL LPS001DL pressure sensor inemo accelerometer magnetometer
Contextual Info: STEVAL-MKI062V2 iNEMO: iNErtial MOdule V2 demonstration board based on MEMS sensors and the STM32F103RE Data brief Features • Two power supply options: power connector, USB connector ■ STM32F103RE: high-density performance line ARM-based 32-bit MCU with 256 to 512 kB

800w power supply unit

Abstract: triac with snubber T620-800W T620W
Contextual Info: T620W 6 A Snubberless Triac Features A2 • IT RMS = 6 A ■ VDRM = VRRM = 600 and 800 V G A1 Description The high commutation performance of this device is based on Snubberless technology from ST. The T620W is especially suited for high inductance loads. This device complies with UL standards

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION - 6 5 4 3 2 20 LOC GP ALL RIGHTS RESERVED. 1 REVISIONS DIST 00 P LTR E DESCRIPTION DATE REVISED PER ECR-13-010469 DWN APVD JR 25JUN13 TM D D 5.76 1.5 ISOMETRIC VIEW 47.27 3.96 C TYP C

Contextual Info: TH I S D R A W I NG IS UNPUBL ISH E D . RELEASED BY C O P Y R I G H T 20 TYCO ELECTRONICS CORPORATION, FOR ALL PUBLICATION RIGHTS LOC REV I S IONS D I ST RESERVED. D E S C R I P T I ON F OR SHIPPED 2 . 3 . PAGE ARE S DATE ECR-0 7 -0 0 I 864 06MAR07 KG ECR-07-025776

STD120N4F6

Abstract: 17042 120N4F6 STB120N4F6 STP120N4F6
Contextual Info: STB120N4F6 STD120N4F6, STP120N4F6 N-channel 40 V, 4 mΩ , 80 A, DPAK, D²PAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max. ID STB120N4F6 40 V 4 mΩ 80 A STD120N4F6 40 V 4 mΩ 80 A STP120N4F6 40 V 4.3 mΩ 80 A • Standard threshold drive

Contextual Info: T620W 6 A Snubberless Triac Features • IT RMS = 6 A ■ VDRM = VRRM = 600 and 800 V A2 G A1 Description The high commutation performance of this device is based on Snubberless technology from ST. The T620W is especially suited for high inductance loads. This device complies with UL standards

STW19NM50N

Contextual Info: STF19NM50N, STP19NM50N, STW19NM50N N-channel 500 V, 0.2 Ω typ., 14 A MDmesh II Power MOSFETs in TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes RDS on max ID 550 V 0.25 Ω 14 A STF19NM50N 3 1 VDS @ TJmax 3 2 1

MO-166

Abstract: L4925 L4925PD L4925PD013TR ST L4925
Contextual Info: L4925 Very low drop voltage regulator Features • Operating DC supply voltage range 6 V to 28 V ■ Transient supply voltage up to 40 V ■ Extremely low quiescent current ■ High precision output voltage ■ Output current capability up to 500 mA ■ Very low dropout voltage less than 0.6 V

T630-800W

Abstract: T630-600W T630W triac 600W
Contextual Info: T630W 6 A Snubberless Triac Features • IT RMS = 6 A ■ VDRM = VRRM = 600 and 800 V A2 G A1 Description The high commutation performance of this device is based on Snubberless technology from ST. The T630W is especially suited for high inductance loads. This device complies with UL standards

ST 17078

Abstract: STD18N55 c5690 STD18N55M5 18N55M5 17078 STP18N55 STF18 STP18N55M5 STF18N55M5
Contextual Info: STD18N55M5 STF18N55M5, STP18N55M5 N-channel 550 V, 0.18 Ω, 14 A, MDmesh V Power MOSFET in DPAK, TO-220FP and TO-220 Preliminary data Features Type VDSS @TJmax RDS on max ID 600 V < 0.21 Ω 14 A STD18N55M5 STF18N55M5 STP18N55M5 3 1 DPAK 3 1 • DPAK worldwide best RDS(on)

Contextual Info: T630W 6 A Snubberless Triac Features • IT RMS = 6 A ■ VDRM = VRRM = 600 and 800 V A2 G A1 Description The high commutation performance of this device is based on Snubberless technology from ST. The T630W is especially suited for high inductance loads. This device complies with UL standards

EMIF03-SIM02F3

Abstract: AN1751 AN2348
Contextual Info: EMIF03-SIM02F3 3-line IPAD , EMI filter including ESD protection Features • EMI symmetrical I/O low-pass filter ■ High efficiency in EMI filtering ■ Lead-free package ■ Very low PCB space consuming: 1.2 mm2 ■ Very thin package: 0.60 mm ■ High efficiency in ESD suppression

120N4F6

Abstract: stp120n4f6 STD120N4F6 624 Marking Code STB120N4F6 17042
Contextual Info: STB120N4F6 STD120N4F6, STP120N4F6 N-channel 40 V, 4 mΩ , 80 A, DPAK, D²PAK, TO-220 STripFET VI DeepGATE™ Power MOSFET Features Type VDSS RDS on max ID STB120N4F6 40 V 4 mΩ 80 A STD120N4F6 40 V 4 mΩ 80 A STP120N4F6 40 V 4 mΩ 3 3 1 80 A 1 DPAK

Contextual Info: L4925 Very low drop voltage regulator Features • Operating DC supply voltage range 6 V to 28 V ■ Transient supply voltage up to 40 V ■ Extremely low quiescent current ■ High precision output voltage ■ Output current capability up to 500 mA ■ Very low dropout voltage less than 0.6 V

marking gk

Abstract: AN1751 AN2348 EMIF04-EAR01F2
Contextual Info: EMIF04-EAR01F2 4-line IPAD , EMI filter and ESD protection Features • EMI I/O low-pass filter ■ High efficiency in EMI filtering ■ High density capacitor ■ Very low PCB space occupation: 1.92 x 1.42 mm ■ Very thin package: 0.65 mm ■ High efficiency in ESD suppression on external

Contextual Info: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION Tyco Electronics AMP GmbH 6 5 4 3 2 20 LOC GP ALL RIGHTS RESERVED. 1 REVISIONS DIST 00 P LTR DESCRIPTION DATE REVISED PER ECR-14-003027 C DWN APVD NK 08MAR2014 TM D D ISOMETRIC REAR VIEW