09FEB Search Results

SCHNEIDER PLC

Contextual Info: THIS DRAWING IS C O P Y R I G H T 2 006 UNPUBLISHED. RELEASED ALL FOR PUBLICATION RIGHTS REVISIONS RESERVED. LTR DATE EC R - 0 9 - 0 2 6 7 5 6 B1 PANEL CUT-OUT W H E N OSEO DESCRIPTION DWN 09FEB2010 APVD ME F O R 0 O N T AO T I N S E R T W ITHOOT HOOSING

Contextual Info: THIS C D R A WI N G IS RELEASED UNPUBLISHED. C O P Y R I G H T 19 9 9 2 7 8 BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION RIGHTS 19 99 LOC REV IS I O N S D I ST AD 0 0 RESERVED. LTR 09FEB0I REV P E R O G 3 C - 044 I -00 9 54 [ 00 ] DWN DATE DE S C R I P T I O N

Contextual Info: THIS DRAWING IS U N P U B U SH ED . COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC ALL RIGHTS RESERVED. 10 10<x< R E V ISIO N S J TOLERANCE UNLESS OTHERWISE SPECIFIED: D D IST LTR DATE DWN APVD 09FEB04 TS KB D ESCRIPTION C1 REDRAWN W/CHANGE

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2004 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 APRIL ,2004- LOC ALL RIGHTS RESERVED. E 1 REVISIONS DIST B LTR NOTES: D DESCRIPTION A DATE EBDO—0 0 3 5 —03 DWN APVD RS FWK 09FEB04 1\ SINGLE PACK IN ACCORDANCE WITH SPEC 107-3275

Contextual Info: TH I S DRAW I NG IS UNPUBLI S H E D . RELEASED BY C O P Y R I G H T 20 TYCO ELECTRONICS CORPORATION. FOR ALL PUBLICATION RIGHTS LOC D I ST REV I S IONS RESERVED. D E S C R I P T I ON c BARE BOOT DATE REVISE PER ECR-06-00318 09FEB2006 REVISE PER ECR- 0 6 - 0 2I 45

Contextual Info: THIS DRAWING IS U N P U B LIS H E D . COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION A LL RIGHTS - , - LOC R ESERVED. REVISIONS D IST D LTR DATE D E SC RIPTIO N A 09FEB07 RELEASED DWN APVD HH WK +0 D -O JO 0.0' \+ 1.00 + 0.05 7P .00 + 0.15

HDR2X5

Contextual Info: T H IS DRAWINS IS. UN PU B L I S H E D , RELEASED BY AHP C O P Y R 1G HT IN C OR PO R A T EC?. FOR ALL PU BLIC A TIO H RISH T5 ,13 LOC REVISIONS D IS T DY RESERVED, PATE DESCRIPTION LTE DWH 09FEB2M0 NPR F P 0 0 -0 0 5 6- 0 0 RT APVD LSF NOTES: ^ — - Y -

100J

Abstract: 102387-1 102387-9 1-102387-0
Contextual Info: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2 - DIST LOC ALL RIGHTS RESERVED. R E VIS IO N S 39 AD LTR DESCRIPTION R2 POSN #1 ECO—0 7 —0 0 2 8 6 6 DATE DWN APVD 09FEB2007 RB DR IN D D 6. C .285

Contextual Info: TH I S DR AW I NG IS UNPUBLI S H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION RIGHTS LOC REV IS IONS D I ST RESERVED. D E S C R I P T I ON DATE R E V I S E PER E C R - 0 6 - 0 0 3 1 8 ADD NOT E 3 DWN 09FEB2006 06MAR09

Contextual Info: 2 THIS C DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 BY RELEASED ALL - F OR PUBLICATIO N RIGHTS 20 L OC RESERVED. AA DIST REVISIONS 00 LTR B5 SEE 4.20 DETAIL DESCRIPTIO N DATE DWN ECR- I 1-009822 I IMAY201 I JJ ECR- 12-002445 09FEB2012 JJ APVD AC G R E F —I

74262

Contextual Info: THIS DRAWING 15 UNPUBLISHED. COPYRIGHT - RELEASED TÖR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC A LL RIGHTS RESER VED . D IST R E V IS IO N S J p LTR D ESC RIPTIO N A2 ADD SHEET 2 OF 2 F J A 0 -0 0 5 2 -0 4 DATE DWN APVD 09FEB04 TS KB 2 7 .6 15- X

Contextual Info: T H I S DRAWING IS UNPUBLI SHED. COPYR IGHT 2006 RELEASED FOR P UB LI CA TI ON REVISIONS ALL RIGHTS RESERVED. LTR B1 DE S CR I PTI ON DATE EC R - 0 9 - 0 2 6 7 5 6 DWN APVD ME 09FEB2010 PANEL E U T - O U T FOR E O N T A O T I N S E R T W H E N USED W I T H O O T HOUS I NO

HDR 2x6

Contextual Info: REV PRODUCT NO OeSCRPTPN ECR S30U1 ECR S50120 ECR 560048 _P_ SEE TABLE _R_ S REVD BY PATE 85 LOW 30NQV93 HL CHWA 02J W 95 B5 LOW 09FEB96 NOTE 0,5 *0.02 SQ PIN r 4,0 p I I r \j\ i l r \ j i-l 15 A j- t I » l A \ j ‘r r r * i/ \ i i i i t i r i/ \ r ~ i i r v

Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 2004 2 APRIL ,2004- LOC ALL RIGHTS RESERVED. E 1 REVISIONS DIST B LTR DESCRIPTION A NOTES: DATE EBDO—0 0 3 5 —03 DWN APVD RS FWK 09FEB04 SINGLE PACK IN ACCORDANCE WITH SPEC 107-3275

transistor marking YD 317

Abstract: STM6719TW 7sf3 STM6719SFB Marking STMicroelectronics year digit Z STM6720SV marking sj STM6777TW 7TG3 sot23-6 marking yj
Contextual Info: STM6717/6718/6719/6720 STM6777/6778/6779/6780 Dual/triple ultra-low voltage supervisors with push-button reset with delay option Features • Primary supply (VCC1) monitor. Fixed (factory-programmed) reset thresholds: 4.63 V to 1.58 V ■ Secondary supply (VCC2) monitor

l7912

Contextual Info: L79xxAC 2 % negative voltage regulators Features • Output current to 1.5 A ■ Output voltages of -5; -12; -15 V ■ Thermal overload protection ■ Short circuit protection ■ Output transition SOA protection Description TO-220 D²PAK The L79xxAC series of three-terminal negative

Contextual Info: RCH Vishay Sfernice Power Resistor, for Mounting onto a Heatsink Thick Film Technology FEATURES • 5 W to 50 W  High power rating  High overload capabilities up to 2500 VRMS  Wide resistance range from 0.24 Mto 1 M  High thermal capacity up to 0.8 °C/W

TPSMA*A

Contextual Info: TPSMA6.8 thru TPSMA43A Vishay General Semiconductor Surface Mount PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology

Contextual Info: 2R-5 SERIES DATA SHEET GAS DISCHARGE TUBE – 2R-5 SERIES FEATURES Provide ultra-fast response to surge voltage from slow-rising surge of 100V/s to rapid-rising surge of 1KV/ȝs. Stable breakdown voltage. High insulation resistance. Low capacitance ”1.5pF .

Contextual Info: 2R-8*6 SERIES DATA SHEET GAS DISCHARGE TUBE – 2R-8*6 SERIES FEATURES Provide ultra-fast response to surge voltage from slow-rising surge of 100V/s to rapid-rising surge of 1KV/ȝs. Stable breakdown voltage. High insulation resistance. Low capacitance ”1.5pF .

Contextual Info: P6KA6.8 thru P6KA43A Vishay General Semiconductor PAR Transient Voltage Suppressors High Temperature Stability and High Reliability Conditions FEATURES • Junction passivation optimized design passivated anisotropic rectifier technology • TJ = 185 °C capability suitable for high

Contextual Info: VN820-E High-side driver Datasheet − production data Features Type RDS on VN820-E VN820SP-E VN820B5-E VN820PT-E VN820-12-E VN820-11-E IOUT 10 VCC 1 PowerSO-10 40 mΩ 9A 36 V • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC

si4838

Contextual Info: Si4838DY Vishay Siliconix N-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) ID (A) 0.003 at VGS = 4.5 V 25 0.004 at VGS = 2.5 V 20 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs: 2.5 V Rated

Contextual Info: 2STR2215 Low voltage fast-switching PNP power transistor Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits s ct 3