09AUG04 Search Results

Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC DIST AF 50 ALL RIGHTS RESERVED. REVISIONS LTR DESCRIPTION DATE REV PER 0G 3A— 0 4 1 9 — 0 4 DWN APVD JR PD 09AUG04 D D 1 CONTINUOUS 2 A C C EP T S

spec RG-316

Abstract: RG-196
Contextual Info: 4 THIS DRAWING IS UNPUBLISHED. 3 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. COPYRIGHT DIST REVISIONS AJ BY TYCO ELECTRONICS CORPORATION. LTR DATE DWN APVD 09AUG04 KW KW DESCRIPTION REV PER 0 S 1 4 - 0 3 3 2 - 0 4 - D D 1. ITEMS 1, 2, 3, AND 4 PACKAGED UNASSEMBLED

SI9434BDY-T1-E3

Abstract: Si9434BDY-T1 Si9434BDY
Contextual Info: Si9434BDY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.3 0.055 @ VGS = −2.5 V −5.1 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9434BDY—E3 (Lead (Pb)-Free)

Si4874BDY

Abstract: SI4874BDY-E3
Contextual Info: Si4874BDY New Product Vishay Siliconix N-Channel 30-V MOSFET PRODUCT SUMMARY VDS V 30 FEATURES rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.0085 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFETS D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View

Contextual Info: SFH615AGB-E3 Vishay Semiconductors Optocoupler, High Reliability, 5300 VRMS Features • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VRMS • High Collector-emitter Voltage, VCEO = 70 V • Low Saturation Voltage

1PM6

Abstract: pm6 11
Contextual Info: VISHAY PM6 OVG Vishay Semiconductors PM6 (OVG) Package Dimensions in mm 19010 Document Number 82339 Rev. 1.1, 09-Aug-04 www.vishay.com 1 PM6 (OVG) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to

SUM110N04-2M3L-E3

Contextual Info: SUM110N04-2m3L New Product Vishay Siliconix N-Channel 40-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) 0.0023 @ VGS = 10 V 40 0.003 @ VGS = 4.5 V ID (A) 110 a D TrenchFETr Power MOSFET D 100% Rg Tested APPLICATIONS D Automotive Such As

Program13

Abstract: an1171 CHN 950 AN1153 TIMEX ADSP-21062 ts101 dsp application note ADSP-21535 ADSP-2188M ADSP-TS101S
Contextual Info: DSM2150F5V DSM Digital Signal Processor System Memory for Analog Devices DSPs (3.3V Supply) FEATURES SUMMARY • ■ ■ ■ ■ ■ Glueless Connection to DSP – Easily add memory, logic, and I/O to the External Port of ADSP-218x, 219x, 2106x, 2116x, 2153x, and TS101 families of

Si4511DY

Abstract: Si4511DY-T1 41496
Contextual Info: Si4511DY Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.0145 @ VGS = 10 V 9.6 0.017 @ VGS = 4.5 V 8.6 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V

Contextual Info: DG3015 Vishay Siliconix New Product Low-Voltage, Low rON, Dual DPDT Analog Switch FEATURES BENEFITS Low Voltage Operation 2.7 V to 3.3 V Low On-Resistance - rON: 0.80 W 3 dB Loss @ 100 MHz Fast Switching: tON = 40 ns tOFF = 35 ns D MICRO FOOTr Package D

S-41504

Abstract: SUP90N06-05L dt 420
Contextual Info: SUP90N06-05L New Product Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) FEATURES rDS(on) (W) 0.0049 @ VGS = 10 V 60 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature ID (A) 90 a 0.0055 @ VGS = 4.5 V APPLICATIONS

SFH615AGB

Contextual Info: SFH615AGB-E3 Vishay Semiconductors Optocoupler, High Reliability, 5300 VRMS Features • Low CTR Degradation • Good CTR Linearity Depending on Forward Current • Isolation Test Voltage, 5300 VRMS • High Collector-emitter Voltage, VCEO = 70 V • Low Saturation Voltage

61400416121

Contextual Info: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: WHITE CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS Ni PLATED QUALITY CLASS: 1500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C

Contextual Info: Si4511DY Vishay Siliconix N- and P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N Channel N-Channel 20 P Channel P-Channel −20 20 rDS(on) (W) ID (A) 0.0145 @ VGS = 10 V 9.6 0.017 @ VGS = 4.5 V 8.6 0.033 @ VGS = −4.5 V −6.2 0.050 @ VGS = −2.5 V

Si4874BDY

Contextual Info: Si4874BDY New Product Vishay Siliconix N-Channel 30-V MOSFET PRODUCT SUMMARY VDS V 30 FEATURES rDS(on) (W) ID (A) 0.007 @ VGS = 10 V 16 0.0085 @ VGS = 4.5 V 14 D TrenchFETr Power MOSFETS D 100% Rg Tested D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View

272c

Abstract: SUM110P06-08L-E3 SUM110P06-08L
Contextual Info: SUM110P06-08L New Product Vishay Siliconix P-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) −60 ID (A)d 0.008 @ VGS = −10 V −110 0.0105 @ VGS = −4.5 V −110 D TrenchFETr Power MOSFET D New Package with Low Thermal Resistance

S-41502-Rev

Contextual Info: SUM110N06-3m4L New Product Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 0.0034 @ VGS = 10 V 60 D TrenchFETr Power MOSFETS D 100% Rg Tested ID (A) APPLICATIONS 110 a 0.0041 @ VGS = 4.5 V D Automotive Such As

Contextual Info: VISHAY PM6 OGV Vishay Semiconductors PM6 (OGV) Package Dimensions in mm 19009 Document Number 82338 Rev. 1.1, 09-Aug-04 www.vishay.com 1 PM6 (OGV) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to

Contextual Info: PM1LL VISHAY Vishay Semiconductors PM1LL Package Dimensions in mm 96 12117 Document Number 82337 Rev. 1.1, 09-Aug-04 www.vishay.com 1 PM1LL VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to

Contextual Info: PM1VV1 VISHAY Vishay Semiconductors PM1VV1 Package Dimensions in mm 13651 Document Number 82336 Rev. 1.1, 09-Aug-04 www.vishay.com 1 PM1VV1 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to

IEC60965

Contextual Info: SFH620AGB-E3 Vishay Semiconductors Optocoupler, AC Input, 5300 VRMS Features • • • • • • • • • High Current Transfer Ratios at 5 mA: 50-600 % at 1.0 mA: 45 % typical > 13 Low CTR Degradation Good CTR Linearity Depending on Forward Current

73037 S-41504

Abstract: SUP90N06-05L
Contextual Info: SUP90N06-05L New Product Vishay Siliconix N-Channel 60-V D-S 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) FEATURES rDS(on) (W) 0.0049 @ VGS = 10 V 60 D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature ID (A) 90 a 0.0055 @ VGS = 4.5 V APPLICATIONS

Contextual Info: DG3015 Vishay Siliconix New Product Low-Voltage, Low rON, Dual DPDT Analog Switch FEATURES BENEFITS Low Voltage Operation 2.7 V to 3.3 V Low On-Resistance - rON: 0.80 W 3 dB Loss @ 100 MHz Fast Switching: tON = 40 ns tOFF = 35 ns D MICRO FOOTr Package D

Contextual Info: Si4816BDY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) Channel-1 30 Channel 2 Channel-2 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 6.8 FEATURES Qg (Typ) D LITTLE FOOTr Plus Power MOSFET D 100% Rg Tested