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    096N08N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPD096N08N3GATMA1

    Transistor: N-MOSFET; unipolar; 80V; 73A; 100W; DPAK,TO252
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    TME IPD096N08N3GATMA1 2,500
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    Avnet Americas () IPD096N08N3GATMA1 Ammo Pack 1
    • 1 $1.89
    • 10 $1.89
    • 100 $0.81
    • 1000 $0.60
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    IPD096N08N3GATMA1 Tape & Reel 2,500
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    Newark () IPD096N08N3GATMA1 Tape & Reel 89 100
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    • 100 $0.81
    • 1000 $0.60
    • 10000 $0.57
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    IPD096N08N3GATMA1 Cut Tape 89 1
    • 1 $1.89
    • 10 $1.89
    • 100 $0.81
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    Rochester Electronics IPD096N08N3GATMA1 306 1
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    • 100 $0.66
    • 1000 $0.55
    • 10000 $0.49
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    EBV Elektronik IPD096N08N3GATMA1 53 Weeks 2,500
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    Infineon Technologies AG IPD096N08N3 G

    Trans MOSFET N-CH 80V 73A 3-Pin(2+Tab) DPAK T/R
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    Bristol Electronics IPD096N08N3 G 2,589
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    Infineon Technologies AG IPD096N08N3GBTMA1

    Power Field-Effect Transistor, 73A I(D), 80V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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    Vyrian IPD096N08N3GBTMA1 10,407
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    096N08N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    096N08N

    Abstract: IPD096N08N3 JESD22
    Contextual Info: 096N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching • Optimized technology for DC/DC converters V DS 80 V R DS(on),max 9.6 mΩ ID 73 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level


    Original     		ipd096n08n3pg-to252-3096n08njesd22 PDF

    Contextual Info: 096N08N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching • Optimized technology for DC/DC converters VDS 80 V RDS(on),max 9.6 mW ID 73 A • Excellent gate charge x R DS(on) product (FOM) • N-channel, normal level


    Original     		ipd096n08n3iec61249-2-21pg-to252-3096n08n PDF