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    Infineon Technologies AG IPP093N06N3GXKSA1

    Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube
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    Bristol Electronics IPP093N06N3GXKSA1 717 1
    • 1 $1.13
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    Rochester Electronics IPP093N06N3GXKSA1 6,660 1
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    Vyrian IPP093N06N3GXKSA1 6,298
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    Infineon Technologies AG IPP093N06N3 G

    Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube
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    Bristol Electronics IPP093N06N3 G 200 1
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    Infineon Technologies AG IPP093N06N3GHKSA1

    Trans MOSFET N-CH 60V 50A 3-Pin(3+Tab) TO-220 Tube
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    Bristol Electronics IPP093N06N3GHKSA1 50
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    Vyrian IPP093N06N3GHKSA1 9,866
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    Infineon Technologies AG IPA093N06N3GXKSA1

    Power Field-Effect Transistor, 43A I(D), 60V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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    Rochester Electronics IPA093N06N3GXKSA1 19,970 1
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    TME IPA093N06N3GXKSA1 1
    • 1 $1.52
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    Vyrian IPA093N06N3GXKSA1 4,486
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    International Rectifier IPP093N06N3GXKSA1

    MOSFET N-Channel 60V 50A (Tc) TO-220-3 Tube
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    Rochester Electronics IPP093N06N3GXKSA1 26 1
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    093N06N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    093N06N

    Abstract: 090N06N IEC61249-2-21 JESD22 PG-TO220-3 marking D50 IPP093N06N3
    Contextual Info: Type IPB090N06N3 G 093N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 9 mΩ ID 50 A • Very low on-resistance R DS(on)


    Original     		ipb090n06n3ipp093n06n3iec61249-2-21pg-to263-3+5pg-to220-3090n06n093n06njesd22marking d50 PDF

    093N06N

    Abstract: IPA093N06N3 JESD22 PG-TO220-3-31 IPA093N06N3G ipa093n
    Contextual Info: 093N06N3 G Type OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 9.3 mΩ ID 43 A • Excellent gate charge x R DS(on) product (FOM)


    Original     		ipa093n06n3pg-to220-3-31093n06njesd22+2ipa093n06n3gipa093n PDF

    093N06N

    Abstract: 090N06N JESD22 PG-TO220-3
    Contextual Info: IPB090N06N3 G 093N06N3 G Type OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 9 mΩ ID 50 A • Very low on-resistance R DS(on)


    Original     		ipb090n06n3ipp093n06n3pg-to263-3pg-to220-3+3090n06n093n06njesd22 PDF