093N06N
Abstract: 090N06N IEC61249-2-21 JESD22 PG-TO220-3 marking D50 IPP093N06N3
Contextual Info: Type IPB090N06N3 G 093N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 9 mΩ ID 50 A • Very low on-resistance R DS(on)
|
Original
|
IPB090N06N3
IPP093N06N3
IEC61249-2-21
PG-TO263-3
PG-TO220-3
090N06N
093N06N
093N06N
090N06N
IEC61249-2-21
JESD22
PG-TO220-3
marking D50
|
PDF
|
093N06N
Abstract: IPA093N06N3 JESD22 PG-TO220-3-31 IPA093N06N3G ipa093n
Contextual Info: 093N06N3 G Type OptiMOSTM3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max 9.3 mΩ ID 43 A • Excellent gate charge x R DS(on) product (FOM)
|
Original
|
IPA093N06N3
PG-TO220-3-31
093N06N
093N06N
JESD22
PG-TO220-3-31
IPA093N06N3G
ipa093n
|
PDF
|
093N06N
Abstract: 090N06N JESD22 PG-TO220-3
Contextual Info: IPB090N06N3 G 093N06N3 G Type OptiMOS 3 Power-Transistor Product Summary Features • for sync. rectification, drives and dc/dc SMPS • Excellent gate charge x R DS on product (FOM) V DS 60 V R DS(on),max (SMD) 9 mΩ ID 50 A • Very low on-resistance R DS(on)
|
Original
|
IPB090N06N3
IPP093N06N3
PG-TO263-3
PG-TO220-3
090N06N
093N06N
093N06N
090N06N
JESD22
PG-TO220-3
|
PDF
|