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    093N04LS Search Results

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    093N04LS Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG BSC093N04LSGATMA1

    MOSFET N-CH 40V 13A/49A TDSON
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    DigiKey () BSC093N04LSGATMA1 Digi-Reel 17,849 1
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    BSC093N04LSGATMA1 Cut Tape 17,849 1
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    BSC093N04LSGATMA1 Tape & Reel 15,000 5,000
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    Avnet Americas () BSC093N04LSGATMA1 Tape & Reel 70,000 52 Weeks 5,000
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    BSC093N04LSGATMA1 Ammo Pack 1
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    Mouser Electronics () BSC093N04LSGATMA1 52,681
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    BSC093N04LSGATMA1 51,863
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    Newark () BSC093N04LSGATMA1 Cut Tape 46,932 1
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    BSC093N04LSGATMA1 Tape & Reel 5,000
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    Bristol Electronics () BSC093N04LSGATMA1 1,712
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    BSC093N04LSGATMA1 135 7
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    TME BSC093N04LSGATMA1 3,195 1
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    Ameya Holding Limited BSC093N04LSGATMA1 2,426
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    Chip One Stop BSC093N04LSGATMA1 Cut Tape 48,325 0 Weeks, 1 Days 5
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    EBV Elektronik BSC093N04LSGATMA1 53 Weeks 5,000
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    Win Source Electronics BSC093N04LSGATMA1 37,140
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    Infineon Technologies AG BSC093N04LS G

    MOSFETs N-Ch 40V 49A TDSON-8 OptiMOS 3
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    Mouser Electronics () BSC093N04LS G 42,398
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    BSC093N04LS G 42,178
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    Bristol Electronics () BSC093N04LS G 30
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    Infineon Technologies AG BSC093N04LSGATMA1.

    Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:49A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.2V; Power Dissipation:35W; No. Of Pins:8Pins Rohs Compliant: Yes |Infineon BSC093N04LSGATMA1.
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    Newark BSC093N04LSGATMA1. Tape & Reel 5,000
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    Bristol Electronics BSC093N04LSG 1,017 7
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    ComSIT USA () BSC093N04LSG 2,186
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    BSC093N04LSG 27,420
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    Win Source Electronics BSC093N04LSG 40,000
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    Bristol Electronics BSC093N04LSGATMA 139
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    093N04LS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    093N04LS

    Contextual Info: 093N04LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 9.3 mΩ ID 49 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original
    BSC093N04LS 093N04LS 093N04LS PDF

    Contextual Info: 093N04LS G OptiMOS 3 Power-Transistor Product Summary Features VDS 40 V • Fast switching MOSFET for SMPS RDS on ,max 9.3 mW • Optimized technology for DC/DC converters ID 49 A • Qualified according to JEDEC1) for target applications PG-TDSON-8 • N-channel; Logic level


    Original
    BSC093N04LS IEC61249-2-21 093N04LS PDF

    093N04LS

    Abstract: BSC093N04LS BSC093N04LS G IEC61249-2-21 JESD22
    Contextual Info: 093N04LS G OptiMOS 3 Power-Transistor Product Summary Features V DS 40 V • Fast switching MOSFET for SMPS R DS on ,max 9.3 mΩ • Optimized technology for DC/DC converters ID 49 A • Qualified according to JEDEC1) for target applications PG-TDSON-8


    Original
    BSC093N04LS IEC61249-2-21 093N04LS 093N04LS BSC093N04LS G IEC61249-2-21 JESD22 PDF

    BSC093N04LS

    Abstract: 093N04LS JESD22 bsc093n04 BSC093N04LS G
    Contextual Info: 093N04LS G OptiMOS 3 Power-Transistor Product Summary Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters V DS 40 V R DS on ,max 9.3 mΩ ID 49 A 1) • Qualified according to JEDEC for target applications • N-channel


    Original
    BSC093N04LS 093N04LS 093N04LS JESD22 bsc093n04 BSC093N04LS G PDF