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    091N03MS Search Results

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    Rochester Electronics LLC BSC091N03MSCGATMA1

    POWER FIELD-EFFECT TRANSISTOR, 1
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    DigiKey BSC091N03MSCGATMA1 Bulk 897
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    Infineon Technologies AG BSC091N03MSCGATMA1

    Power Field-Effect Transistor, 12A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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    Rochester Electronics BSC091N03MSCGATMA1 39,335 1
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    Infineon Technologies AG BSC091N03MSCG

    Discontinued
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    Vyrian BSC091N03MSCG 2,387
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    091N03MS Datasheets Context Search

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    091N03MS

    Abstract: BSC091N03MSC BSC091N03MS
    Contextual Info: 091N03MSC G OptiMOS 3 M-Series Power-MOSFET Product Summary Features V DS • Optimized for 5V driver application Notebook, VGA, POL R DS(on),max • Low FOMSW for High Frequency SMPS • 100% Avalanche tested 30 V V GS=10 V 9.1 mΩ V GS=4.5 V 12.1


    Original     		BSC091N03MSC IEC61249-2-21 091N03MS 091N03MS BSC091N03MS PDF