08MAY2007 Search Results

2SC3650

Abstract: 2Sc3650 equivalent MARKING CF
Contextual Info: 2SC3650 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES Low collector-emitter saturation voltage VCE sat High DC current gain Large current capacity LF amp, various drivers, muting circuit MAXIMUM RATINGS (TA=25 oC unless otherwise noted)

2SD1898

Abstract: 100MHZ
Contextual Info: 2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. A B

KDS 4.000 Crystal

Abstract: AN3060 digital weight KDS crystal 8.000 quartz crystal kds 4.000 CXO 049 KDS 4.000 oscillator citizen 120 Digital Alarm Clock quartz kds kds 07
Contextual Info: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital

STGP19NC60WD

Contextual Info: STGP19NC60W N-channel 600V - 19A - TO-220 Ultra fast PowerMESH IGBT PRELIMINARY DATA Features Type VCES STGP19NC60W 600V VCE sat IC @100°C (max)@25°C < 2.5V 22A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction susceptbility)

GW19NC60WD

Abstract: gw19nc60w
Contextual Info: STGW19NC60WD STGP19NC60WD N-channel 600V - 19A - TO-220 - TO-247 Ultra fast PowerMESH IGBT Features VCE sat IC @100°C (max)@25°C Type VCES STGP19NC60WD 600V < 2.5V 22A STGW19NC60WD 600V < 2.5V 23A • High frequency operation ■ Low CRES / CIES ratio (no cross-conduction

STB13NM50N-1

Abstract: STF13NM50N STB13NM50N STP13NM50N STW13NM50N F13NM50N
Contextual Info: STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh Power MOSFET Features Type VDSS @Tjmax RDS(on) ID STB13NM50N 550V <0.32Ω 12A STB13NM50N-1 550V <0.32Ω 12A STF13NM50N

marking codes transistors sot-223

Abstract: 2STF1550 transistor marking 551 sot-89 N1550 JESD97 P025H 2STN1550
Contextual Info: 2STF1550 2STN1550 Low voltage high performance NPN power transistors Preliminary Data Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting devices in medium power SOT-89 and SOT-223 packages

5 bit binary multiplier

Abstract: KDS 6.000 MHZ crystal M41T93 VSOJ20 AI11822
Contextual Info: M41T93 Serial SPI bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital

M41T93

Contextual Info: M41T93 Serial SPI bus real-time clock with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital

KDS 4.000 Crystal

Abstract: KDS crystal 8.000 AN3060 digital weight AN3060 quartz crystal kds 4.000 M41T82 M41T83 VSOJ20 KDS 4.000 oscillator M41T83Z
Contextual Info: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital

KDS 4.000 oscillator

Abstract: KDS 4.000 Crystal project of digital count up and countdown timer KDS 32kHZ crystal project of countdown timer digital count up and countdown timer digital countdown timer quartz kds quartz crystal kds 4.000 KDS Crystals oscillator
Contextual Info: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • 2.0V to 5.5V clock operating voltage ■ Ultra-low battery supply current of 365nA ■ Counters for tenths/hundredths of seconds, seconds, minutes, hours, day, date, month, year, and century

Contextual Info: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK850 30V <0.0029Ω 71nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested

KDS 4.000 Crystal

Abstract: CXO 049 CXO 046 M41T82 M41T83 VSOJ20 KDS 4.000 oscillator n641 quartz crystal kds 4.000 1418h
Contextual Info: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital

GF19NC60WD

Abstract: JESD97 STGF19NC60WD
Contextual Info: STGF19NC60WD N-channel 600V - 7A - TO-220 Ultra fast PowerMESH IGBT PRELIMINARY DATA Features Type VCES STGF19NC60WD 600V • VCE sat IC @100°C (max)@25°C < 2.5V 7A 3 High frequency operation 1 ■ Low CRES / CIES ratio (no cross-conduction susceptibility)

2SD1898

Abstract: NPN Silicon Epitaxial Planar Transistor 100MHZ
Contextual Info: 2SD1898 NPN Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product Description SOT-89 The 2SD1898 is designed for switching applications. Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. A B

2SA1201

Abstract: 2SC2881
Contextual Info: 2SA1201 PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 E C B MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter

12F30L

Abstract: A 6069 H 6069 marking STS12NF30L
Contextual Info: STS12NF30L N-channel 30 V, 0.008 Ω, 12 A STripFET II Power MOSFET in SO-8 package Datasheet — production data Features Order code VDSS RDS on ID STS12NF30L 30 V < 0.009 Ω 12 A 7 6 5 8 • Standard outline for easy automated surface mount assembly ■

Contextual Info: BCPA94 PNP Silicon Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-89 FEATURES High voltage: VCEO= 400V min @ IC= 1mA High current gain: IC=300 mA @ 25oC Complementary to BCPA44 o MAXIMUM RATINGS (TA=25 C unless otherwise noted)

C3459

Contextual Info: M41T82 M41T83 Serial I2C bus RTC with battery switchover Features • Ultra-low battery supply current of 365 nA ■ Factory calibrated accuracy ±5 ppm guaranteed after 2 reflows SOX18 – Much better accuracies achievable using built-in programmable analog and digital

N3PF06

Abstract: STN3PF06 JESD97
Contextual Info: STN3PF06 P-channel 60 V - 0.20 Ω - 2.5 A - SOT-223 STripFET II Power MOSFET Features Type VDSS RDS on max ID STN3PF06 60 V < 0.22 Ω 2.5 A • Extremely dv/dt capability ■ 100% avalanche tested ■ 2 1 2 3 SOT-223 Application oriented characterization

S12NF30L

Abstract: JESD97 STS12NF30L
Contextual Info: STS12NF30L N-channel 30V - 0.008Ω - 12A SO-8 STripFET II Power MOSFET Features Type VDSS RDS on ID STS12NF30L 30V <0.009Ω 12A • Standard outline for easy automated surface mount assembly ■ Low threshold drive S0-8 Description This Power MOSFET is the latest development of

JESD97

Abstract: K850 STK850
Contextual Info: STK850 N-channel 30V - 0.0024Ω - 30A - PolarPAK STripFET Power MOSFET Features Type VDSS RDS on RDS(on)*Qg PTOT STK850 30V <0.0029Ω 71nC*mΩ 5.2W • Ultra low top and bottom junction to case thermal resistance ■ Very low capacitances ■ 100% Rg tested

STF13NM50N

Abstract: STW13NM50N STB13NM50N-1 P13NM50N STB13NM50N STP13NM50N f13nm50n
Contextual Info: STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500 V - 0.250 Ω - 12 A MDmesh II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB13NM50N 550 V 0.32 Ω 12 A STB13NM50N-1 550 V 0.32 Ω

04MAR2008

Contextual Info: STB13NM50N/-1 - STF13NM50N STP13NM50N - STW13NM50N N-channel 500 V - 0.250 Ω - 12 A MDmesh II Power MOSFET TO-220 - TO-247 - TO-220FP - I2PAK - D2PAK Features Type VDSS @Tjmax RDS(on) max ID STB13NM50N 550 V 0.32 Ω 12 A STB13NM50N-1 550 V 0.32 Ω