08MAY00 Search Results

AWM3303V

Contextual Info: i FO-55 HONEYWELL P A R T NUMBER SUPPUY VOUTAGE RECOMMENDED E X C IT A T IO N POWER C O N S U M P T IO N OUTPUT VOUTAGE @ 1000 seem O U T P U T V O U T A G E @ NUUU 0 s e e m O U T P U T V O U T A G E § - 10 0 0 s e e m G A U 1B R A T I O N G A S N U U U O U T P U T SH 1 P T

Si9121

Abstract: Si9121DY-5-T1
Contextual Info: Si9121 New Product Vishay Siliconix High-Voltage, Non-Isolated Buck-Boost Converter for ISDN Digital Phones FEATURES D D D D D D Fixed +5-V or +3.3-V Output D Integrated Floating Feedback Amplifier D On-Chip 70-V, 1.5-W N-Channel MOSFET Switch D Integrated High Voltage Start-Up Circuit,

Contextual Info: R E VI S IONS 83-58SCP-RFX NOTES: M A T E R I A L S OF C ON S T R UC T I ON : S H E L L J BODY = B R A S S , N I C K E L P L ATE D CONTACT P I N = B R A S S , S I L V E R P L A T E D F ERR UL E = COPPER, N I C K E L P L A T E D I NS UL ATOR = P H E N O L I C , YELLOW PER PANTONE

Si4834DY

Contextual Info: Si4834DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30

pll saw filter modulator circuit diagram

Abstract: G3-64 vco 900 1800 mhz GSM part number IC vco 900 1800 mhz
Contextual Info: T0701 GSM-GPRS Receiver Description The T0701 is a bipolar integrated RF transceiver for GSM-based cellular systems 900/ 1800/ 1900 MHz and other wireless communication applications. This integrated circuit consists of a superheterodyne receiver with a high 1st intermediate frequency (IF) of 378 MHz

Contextual Info: Si4834DY New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.022 @ VGS = 10 V 7.5 0.030 @ VGS = 4.5 V 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) VSD (v) Diode Forward Voltage IF (A) 30

Contextual Info: TST0922 SiGe-Power Amplifier for GSM 900 Flipchip Version Description The TST0922 is a monolithic integrated power amplifier IC in flipchip technology. The device is manufactured using TEMIC Semiconductors’ Silicon-Germanium (SiGe) technology and has been designed for use in GSM